Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Robert Grabar"'
Autor:
David F. Brown, Miroslav Micovic, Dayward Santos, Jesus Magadia, R. Bowen, Shawn D. Burnham, Robert Grabar, Joe Tai, Isaac Khalaf
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 30:480-485
HRL’s T3 GaN MMIC technology is evaluated using dc reliability experiments, including a voltage step-stress test, a temperature step-stress test, and a 3-temperature life test. The drain voltage step-stress test revealed three distinct regions of o
Autor:
C. McGuire, Helen Fung, Peter Chen, Jeong-Sun Moon, Robert Grabar, D. Wong, S. Kim, Adele E. Schmitz, D. F. Brown, Ivan Alvarado-Rodriguez, Jongchan Kang, Thomas C. Oh
Publikováno v:
IEEE Electron Device Letters. 37:272-275
We report the state-of-the-art performance of deep-submicrometer gate length dual-gate GaN HEMTs and cascode GaN HEMTs with $10\times $ reduced gate-to-drain feedback capacitance compared with single-gate GaN HEMTs. With 150-nm gate length field-plat
Autor:
Peter Chan, Haw Y. Tai, Helen Fung, D. F. Brown, Robert Grabar, Jeong-Sun Moon, Jongchan Kang
Publikováno v:
2017 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT).
GaN RF technology has continued to demonstrate state-of-the-art power, efficiency, linearity, and low-noise performance in RF and mm-wave band. Here, we report on a multi-octave (100 MHz–8 GHz), linear nonuniform distributed amplifier (NDPA) in a M
Autor:
Peter Chan, Dustin Le, D. F. Brown, D. Wong, Haw Y. Tai, C. McGuire, Helen Fung, Jeong-Sun Moon, Robert Grabar, Jongchan Kang
Publikováno v:
2017 IEEE Topical Conference on RF/Microwave Power Amplifiers for Radio and Wireless Applications (PAWR).
We report on a multi-octave (100 MHz–8 GHz), linear nonuniform distributed amplifier (NDPA) in a MMIC architecture using scaled 120-nm short-gate-length GaN HEMTs. The linear NDPAs were built with six sections in a nonuniform distributed amplifier
Autor:
Isaac Khalaf, Yan Tang, Joel Wong, Miroslav Micovic, Eric M. Prophet, Joe Tai, Dayward Santos, Helen Fung, Charles McGuire, David F. Brown, Shawn D. Burnham, A. Kurdoghlian, Adele E. Schmitz, Herrault Florian G, Robert Grabar, Hector L. Bracamontes, D. Regan
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
We report the first generation of GaN MMIC circuits that are based on the latest generation of (ft > 320 GHz and fmax > 580 GHz) [1] GaN Transistors. The reported broadband Ka-band (27 GHz - 40 GHz) GaN LNA MMIC's have Noise Figure (NF) as low as 1 d
Autor:
Isaac Khalaf, Helen Fung, Miroslav Micovic, Joe Tai, Dayward Santos, Jesus Magadia, Robert Grabar, David F. Brown, A. Kurdoghlian
Publikováno v:
2016 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).
We report MMIC traveling-wave amplifiers (TWAs) fabricated using a 40 nm GaN double heterostructure FET (DHFET) technology. By varying the gate periphery within cascode gain stages, we produced a family of TWA designs with a range of gain and bandwid
Autor:
C. McGuire, D. Wong, Dustin Le, D. F. Brown, Helen Fung, Jongchan Kang, Peter Chan, Jeong-Sun Moon, Robert Grabar
Publikováno v:
2016 IEEE Topical Conference on Power Amplifiers for Wireless and Radio Applications (PAWR).
We report on multi-octave (100 MHz – 8 GHz) GaN HEMT nonuniform distributed amplifier (NDPA) with and without linearization in a MMIC architecture for the first time. The NDPAs were fabricated with 0.14-μm field-plate AlGaN/GaN HEMT technology wit
Autor:
Paul Hashimoto, Adam J. Williams, Adele E. Schmitz, Keisuke Shinohara, C. Butler, S. Kim, Robert Grabar, D. Regan, P. J. Willadsen, Shawn D. Burnham, Andrea Corrion, Miroslav Micovic, David F. Brown, Ivan Milosavljevic
Publikováno v:
IEEE Transactions on Electron Devices. 58:1063-1067
We have achieved the monolithic integration of two Ill-nitride device structures through the use of etching and re growth by molecular beam epitaxy (MBE). Using this regrowth technique, we integrated enhancement-mode (E-mode) and depletion-mode (D-mo
Autor:
David F. Brown, Adam J. Williams, Keisuke Shinohara, Michael Johnson, Dayward Santos, Thomas C. Oh, Joel C. Wong, Shawn D. Burnham, John F. Robinson, C. Butler, Robert Grabar, Rongming Chu, S. Kim, Daniel Zehnder, Miroslav Micovic, Ivan Alvarado-Rodriguez, Andrea Corrion
Publikováno v:
IEEE Electron Device Letters. 34:1118-1120
We report a novel GaN heterojunction field-effect transistor device that incorporates vertically scaled epilayers, a nanoscale gate with integrated staircase-shaped field plates, and regrown ohmic contacts. This device technology has an unprecedented
Autor:
C. McGuire, A. Kurdoghlian, M. Wetzel, Robert Grabar, H.P. Moyer, D. Regan, David H. Chow, Miroslav Micovic, Keisuke Shinohara, Alexandros Margomenos
Publikováno v:
2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).