Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Robert G. Mazur"'
Autor:
Robert G. Mazur, C. Win Ye, William J. Alexander, John Borland, M. C. Benjamin, Robert J. Hillard
Publikováno v:
MRS Proceedings. 810
An accurate method to measure the four point probe (4PP) sheet resistance (Rs) of USJ Source-Drain structures is described. The new method utilizes Elastic Material probes (EM- probe) to form non-penetrating contacts to the silicon surface. The probe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b00ad10492d6b4a83fbf70811efc4778
https://doi.org/10.1557/proc-810-c11.6
https://doi.org/10.1557/proc-810-c11.6
Publikováno v:
AIP Conference Proceedings.
The performance of deep submicron devices depends heavily on the electrical properties of the gate dielectric. Electrical properties such as dielectric constant, leakage current density, interface trap and oxide trapped charge, dielectric integrity,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cef59734706e01163ee93e941e443d00
https://doi.org/10.1063/1.1354380
https://doi.org/10.1063/1.1354380
Autor:
G. A. Gruber, William H. Howland, Robert J. Hillard, Robert G. Mazur, Richard Siergiej, Stephen M. Ramey, S. Evseev
Publikováno v:
AIP Conference Proceedings.
A new metrology method has been developed for the monitoring of advanced gate dielectric processes associated with 0.1 μm technology. Unlike previous techniques that involved corona or Hg gate based methods, this technique measures all gate dielectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8ec7d1292d307981b26f55c90bac851
https://doi.org/10.1063/1.1354382
https://doi.org/10.1063/1.1354382
Publikováno v:
The 1998 international conference on characterization and metrology for ULSI technology.
In the past, resistivity and carrier density profiles derived from spreading resistance measurements have been satisfactorily verified by comparing a doped layer’s measured sheet resistance, ρs, with a sheet resistance value calculated from the on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cff2a4f88c5bf25cf161591fde6cd783
https://doi.org/10.1063/1.56799
https://doi.org/10.1063/1.56799
Autor:
Robert J. Hillard, Robert G. Mazur, L. E. Peitersen, Richard Conti, R. H. Herlocher, G. A. Gruber
Publikováno v:
The 1998 international conference on characterization and metrology for ULSI technology.
This paper reports the use of a mercury probe with a highly repeatable contact area to monitor the effects of plasma damage on a gate oxide resulting from a PECVD process. The advantage of the mercury probe is that no processing is required to form t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d38c00532bda60fa067cd47a4cb61171
https://doi.org/10.1063/1.56907
https://doi.org/10.1063/1.56907
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20:488
The most critical parameter for deep submicron metal–oxide–semiconductor (MOS) field effect transistors (MOSFETs) is the threshold voltage (VT). The device VT is highly dependent on processing; specifically, the ion implanted channel-doping profi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::574d8ef499f62cfce5ea6cba8b361918
https://doi.org/10.1116/1.1424284
https://doi.org/10.1116/1.1424284
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16:411
The spreading resistance profiling (SRP) method has undergone significant improvements over the last five years, enhancing the techniques’ capability for profiling sub-100 nm junctions. Newly developed procedures for conditioning probes, preparing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e29b9e266e21e7dcd686e6100d5d320c
https://doi.org/10.1116/1.589822
https://doi.org/10.1116/1.589822
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 16:316
Si (100) wafers were boron implanted using an xRLEAP ion implanter at energies of 0.2, 1.0, and 3.0 keV all at a dose of 1×1014 cm−2. Advanced spreading resistance (SR) measurements were performed on the as-implanted samples to obtain high-resolut
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a67dc8ed69cfa77d35ffc0f0f9be547
https://doi.org/10.1116/1.589803
https://doi.org/10.1116/1.589803
Autor:
Robert G. Mazur
Publikováno v:
ACS Symposium Series ISBN: 9780841209343
Microelectronics Processing: Inorganic Materials Characterization
Microelectronics Processing: Inorganic Materials Characterization
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7798dc60dae17e7d31e044c1f219c8b6
https://doi.org/10.1021/bk-1986-0295.ch003
https://doi.org/10.1021/bk-1986-0295.ch003
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