Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Robert Falster"'
Publikováno v:
Journal of Applied Physics. 131:165702
Silicon samples after fast-firing with a hydrogen-rich silicon nitride layer on their surfaces can contain high concentrations of hydrogen (up to 6 × 1015 cm−3 in this study). Directly after fast-firing, this hydrogen is mostly present in a neutra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c532bc5f53e1372e362b4c15546c731e
https://doi.org/10.1063/5.0086307
https://doi.org/10.1063/5.0086307
Autor:
Jan Schmidt, Lailah Helmich, Dominic C. Walter, Robert Falster, V. V. Voronkov, Dennis Bredemeier
Publikováno v:
Solar Energy Materials and Solar Cells. 185:283-286
We examine the regeneration kinetics of passivated emitter and rear solar cells (PERCs) fabricated on boron-doped p-type Czochralski-grown silicon wafers in darkness by electron injection via application of a forward bias voltage at elevated temperat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbbaf3755af139b861b56af2949410af
https://doi.org/10.1016/j.solmat.2018.05.023
https://doi.org/10.1016/j.solmat.2018.05.023
Publikováno v:
Solar Energy Materials and Solar Cells. 173:33-36
We determine the equilibrium concentration of the BO defect in boron-doped Czochralski-grown silicon after prolonged (up to 150 h) annealing at relatively low temperatures between 200 and 300 °C. We show that after sample processing, the BO concentr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b6f13a6689aaf5671b91dc9fc67e339
https://doi.org/10.1016/j.solmat.2017.06.036
https://doi.org/10.1016/j.solmat.2017.06.036
Publikováno v:
Solar Energy Materials and Solar Cells. 131:51-57
We perform carrier lifetime investigations on oxygen-rich boron-doped Czochralski-grown silicon (Cz-Si) wafers. As a characteristic feature of oxygen-rich boron-doped silicon materials, their lifetime is generally limited by boron–oxygen-related de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a179afea96c148af8dbdc1be9503c9fd
https://doi.org/10.1016/j.solmat.2014.06.011
https://doi.org/10.1016/j.solmat.2014.06.011
Oxide precipitates are well known to degrade minority carrier lifetime in silicon, but the mechanism by which they act as recombination centres is not fully understood. We report minority carrier lifetime measurements on oxide precipitate-containing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1892a7cf5a101bd1b70e3a528bda96ef
https://doi.org/10.1063/1.4789858
https://doi.org/10.1063/1.4789858
Autor:
Deniz Emiroglu, A. Giannattasio, S. Senkader, C. R. Alpass, John D. Murphy, Jan H. Evans-Freeman, Robert Falster, Peter R. Wilshaw
A novel dislocation locking technique is used to study the behaviour of nitrogen in float-zone silicon (FZ-Si). Specimens containing well-defined arrays of dislocation half-loops are subjected to isothermal anneals of controlled duration, during whic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::86950bb9a4f5a0fd8c55fc442c3ee691
https://doi.org/10.1149/1.2355760
https://doi.org/10.1149/1.2355760
Autor:
V.V. Voronkov, Robert Falster
Publikováno v:
Materials Science in Semiconductor Processing. 15:697-702
Vacancies in silicon are known to be highly mobile both at high temperatures (just below the melting point) and at cryogenic temperatures. Contrary to this, however, vacancy diffusivity near 800 °C — as deduced from the radiation-enhanced self-dif
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11dcc036beb350604ee6829c18cfcc2b
https://doi.org/10.1016/j.mssp.2012.04.004
https://doi.org/10.1016/j.mssp.2012.04.004
Autor:
Jack Mullins, L.I. Murin, Anthony R. Peaker, João A. P. Coutinho, M. Vaqueiro-Contreras, Vladimir P. Markevich, Matthew P. Halsall, Robert Falster, Jeff Binns
Publikováno v:
Vaqueiro Contreras, M, Markevich, V, Mullins, J, Halsall, M, Murin, L I, Falster, R, Binns, J, Coutinho, J & Peaker, A 2018, ' Lifetime degradation of n-type Czochralski silicon after hydrogenation ', Journal of Applied Physics, vol. 123, 161415 . https://doi.org/10.1063/1.5011351
Hydrogen plays an important role in the passivation of interface states in silicon-based metal-oxide semiconductor technologies and passivation of surface and interface states in solar silicon. We have shown recently [Vaqueiro-Contreras et al., Phys.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f43302cb164803ce8e86397e93b159ab
https://doi.org/10.1063/1.5011351
https://doi.org/10.1063/1.5011351
Autor:
Galina I. Voronkova, Mikhail Milvidski, Vladimir V. Voronkov, Robert Falster, Luca Moiraghi, A.V. Batunina
Publikováno v:
ECS Transactions. 3:225-235
The nitrogen impurity, in nitrogen-doped Float-Zone (FZ) silicon, is known to show no electrical activity in as-grown state, but to produce deep centers after annealing at relatively high temperatures like 900 or 1000{degree sign}C. In the present wo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32889561634e3155b070400cae5a9911
https://doi.org/10.1149/1.2355759
https://doi.org/10.1149/1.2355759
Autor:
Vladimir V. Voronkov, Robert Falster
Publikováno v:
ECS Transactions. 3:113-126
Out-diffusion profiles of nitrogen produced by annealing at 900oC show that there are at least two independent nitrogen components which we label A and B. The A-component - dominant at higher nitrogen concentration - can be attributed to the intersti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::040cba899827a34a2af50dd56fd4d34b
https://doi.org/10.1149/1.2355750
https://doi.org/10.1149/1.2355750