Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Robert E. Treharne"'
Autor:
Matthew J. Wahila, Zachary W. Lebens-Higgins, Keith T. Butler, Daniel Fritsch, Robert E. Treharne, Robert G. Palgrave, Joseph C. Woicik, Benjamin J. Morgan, Aron Walsh, Louis F. J. Piper
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022509-022509-9 (2019)
In the last decade, transparent amorphous oxide semiconductors (TAOS) have become an essential component of many electronics, from ultra high resolution displays to solar cells. However, these disordered oxides typically rely on expensive component m
Externí odkaz:
https://doaj.org/article/990cded0ca18440aafd78b86df687258
Publikováno v:
Materials, Vol 8, Iss 10, Pp 7230-7240 (2015)
Transparent conducting oxides (TCOs), with high optical transparency (≥85%) and low electrical resistivity (10−4 Ω·cm) are used in a wide variety of commercial devices. There is growing interest in replacing conventional TCOs such as indium tin
Externí odkaz:
https://doaj.org/article/6d62d4488c984851861e305e69e763ed
Autor:
Laurie J. Phillips, Atef M. Rashed, Robert E. Treharne, James Kay, Peter Yates, Ivona Z. Mitrovic, Ayendra Weerakkody, Steve Hall, Ken Durose
Publikováno v:
Data in Brief, Vol 5, Iss C, Pp 926-928 (2015)
Ellipsometry was used to measure the amplitude ratio and phase difference of light undergoing a phase shift as it interacts with a thin film of organic–inorganic hybrid perovskite CH3NH3PbI3 (MAPI) deposited onto a (100) silicon wafer. The refracti
Externí odkaz:
https://doaj.org/article/a79dea6862cb4e6f8f1e8af10da32625
Autor:
Phillip J. Dale, Brahime El Adib, Erika V.C. Robert, René Gunder, Robert E. Treharne, Henrique Pereira Coutada Miranda, Susan Schorr, Hossam Elanzeery, Finn Babbe, Conrad Spindler, Jessica de Wild, Ludger Wirtz
Publikováno v:
Acta Materialia. 151:125-136
Cu2Sn1-xGexS3 is a p-type semiconductor alloy currently investigated for use as an absorber layer in thin film solar cells. The aim of this study is to investigate the properties of this alloy in thin film form in order to establish relationships bet
Autor:
Steve Hall, Siti Nurbaya Supardan, Paul R. Chalker, Amit K. Chakraborty, Partha Pratim Das, Rajat Mahapatra, James T. Gibbon, Ken Durose, Ivona Z. Mitrovic, Vinod R. Dhanak, Robert E. Treharne, K. Sawangsri
Publikováno v:
Microelectronic Engineering
MICROELECTRONIC ENGINEERING
MICROELECTRONIC ENGINEERING
The band alignment of Ta2O5/GaN has been measured experimentally. The HCl cleaning has been found to be effective in removing oxygen from the GaN surface and was used prior to deposition of the Ta2O5 films by radio frequency magnetron sputtering. Var
Autor:
Aron Walsh, Katie Mason, Robert E. Treharne, Bruce White, Graeme W. Watson, Jinghua Guo, Christopher H. Hendon, Matthew J. Wahila, Joseph C. Woicik, Hanjong Paik, Nicholas F. Quackenbush, Zachary W. Lebens-Higgins, Abhishek Nandur, Louis F. J. Piper, Shawn Sallis, Keith T. Butler, Darrell G. Schlom, Dario Arena
Publikováno v:
Wahila, M J, Butler, K T, Lebens-Higgins, Z W, Hendon, C H, Nandur, A S, Treharne, R E, Quackenbush, N F, Sallis, S, Mason, K, Paik, H, Schlom, D G, Woicik, J C, Guo, J, Arena, D A, White, B E, Watson, G W, Walsh, A & Piper, L F J 2016, ' Lone-pair stabilization in transparent amorphous tin oxides : a potential route to p-type conduction pathways ', Chemistry of Materials, vol. 28, no. 13, pp. 4706-4713 . https://doi.org/10.1021/acs.chemmater.6b01608
The electronic and atomic structures of amorphous transparent tin oxides have been investigated by a combination of X-ray spectroscopy and atomistic calculations. Crystalline SnO is a promising p-type transparent oxide semiconductor due to a complex
Publikováno v:
Materials
Materials, Vol 8, Iss 10, Pp 7230-7240 (2015)
Volume 8
Issue 10
Pages 7230-7240
Materials; Volume 8; Issue 10; Pages: 7230-7240
Materials, Vol 8, Iss 10, Pp 7230-7240 (2015)
Volume 8
Issue 10
Pages 7230-7240
Materials; Volume 8; Issue 10; Pages: 7230-7240
Transparent conducting oxides (TCOs), with high optical transparency (≥85%) and low electrical resistivity (10−4 Ω·cm) are used in a wide variety of commercial devices. There is growing interest in replacing conventional TCOs such as indium tin
Autor:
Zachary W. Lebens-Higgins, Benjamin J. Morgan, Aron Walsh, Matthew J. Wahila, Joseph C. Woicik, Robert E. Treharne, Keith T. Butler, Robert G. Palgrave, Daniel Fritsch, Louis F. J. Piper
Publikováno v:
APL Materials, Vol 7, Iss 2, Pp 022509-022509-9 (2019)
Wahila, M J, Lebens-Higgins, Z W, Butler, K, Fritsch, D, Treharne, R E, Palgrave, R G, Woicik, J C, Morgan, B, Walsh, A & Piper, L F J 2019, ' Accelerated optimization of transparent, amorphous zinc-tin-oxide thin films for optoelectronic applications ', APL Materials, vol. 7, no. 2, 022509 . https://doi.org/10.1063/1.5053683
Wahila, M J, Lebens-Higgins, Z W, Butler, K, Fritsch, D, Treharne, R E, Palgrave, R G, Woicik, J C, Morgan, B, Walsh, A & Piper, L F J 2019, ' Accelerated optimization of transparent, amorphous zinc-tin-oxide thin films for optoelectronic applications ', APL Materials, vol. 7, no. 2, 022509 . https://doi.org/10.1063/1.5053683
In the last decade, transparent amorphous oxide semiconductors (TAOS) have become an essential component of many electronics, from ultra high resolution displays to solar cells. However, these disordered oxides typically rely on expensive component m
Autor:
Y. Y. Proskuryakov, V. A. Petrov, Robert E. Treharne, G. E. Cirlin, D. A. Kudryashov, A. V. Nashchekin, I. P. Soshnikov, Ken Durose
Publikováno v:
Semiconductors. 47:875-878
The processes of the noncatalytic synthesis of structures with CdTe nanowires by magnetron sputtering deposition are studied. It is shown that the deposition of magnetron sputtered CdTe onto substrates covered by a porous SiO2 layer can result in CdT
Autor:
Paul R. Chalker, H. van Zalinge, Ivona Z. Mitrovic, Ayendra Weerakkody, Laurie J. Phillips, I. Nemr Noureddine, J. S. Wrench, Naser Sedghi, Robert E. Treharne, Ken Durose, Steve Hall
Publikováno v:
Microelectronic Engineering
MICROELECTRONIC ENGINEERING
MICROELECTRONIC ENGINEERING
Graphical abstractDisplay Omitted Ta2O5/Al2O3 and Nb2O5/Al2O3 bi-layer MIM devices were studied.Obtained an asymmetry of 18 at 0.35V on Ta2O5/Al2O3 MIIM device.Peak responsivity of 9A/W at 0.2V achieved on Nb2O5/Al2O3 MIIM.Resonant tunnelling effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b9ad1dd98453d2b39705bfb2f7b6dcea