Zobrazeno 1 - 10
of 255
pro vyhledávání: '"Robert D. Burnham"'
Autor:
Ahn Goo Choo, Joseph T. Boyd, P. Chen, Stephen C. Smith, Gregory N. De Brabander, Andrew J. Steckl, Howard E. Jackson, Mukesh Kumar, Robert D. Burnham
Publikováno v:
Superlattices and Microstructures. 15:421-425
We have formed optical channel waveguides using focused ion beam (FIB) induced compositional mixing in an Al x Ga 1-x As multiple quantum well (MQW) structure. A focused Si ++ ion beam at 160 keV is implanted with a single scan of 5×10 14 cm -2 foll
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b931907bee17bc82002085796dce982
https://doi.org/10.1006/spmi.1994.1081
https://doi.org/10.1006/spmi.1994.1081
Autor:
Mukesh Kumar, G.N. DeBrabander, Ahn Goo Choo, P. Chen, V. Gupta, Stephen C. Smith, I.T. Boyd, Howard E. Jackson, Andrew J. Steckl, Robert D. Burnham
Publikováno v:
IEEE Photonics Technology Letters. 5:435-438
Optical channel waveguiding in a AlGaAs multiple-quantum-well structure was demonstrated in a channel formed by compositional mixing induced by focused ion beam (FIB) implantation. Selective mixing was achieved by FIB implanting Si/sup ++/ with a dos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1f3a031e67f0ea234347ce16f63c2fb
https://doi.org/10.1109/68.212691
https://doi.org/10.1109/68.212691
Publikováno v:
Journal of Applied Physics. 73:2015-2018
Process conditions for fabricating Si‐O impurity‐induced layer disorder defined AlxGa1−xAs‐GaAs buried heterostructure quantum well lasers utilizing a fully self‐aligned planar process and conventional As free open‐tube‐furnace annealin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61b694f892301f98dfff2271c01f0003
https://doi.org/10.1063/1.353142
https://doi.org/10.1063/1.353142
Autor:
K. C. Hsieh, Nick Holonyak, W. E. Plano, Robert D. Burnham, Judith E. Baker, J. S. Major, Louis J. Guido
Publikováno v:
Journal of Applied Physics. 67:6813-6818
Experiments are described determining the critical parameters for vacancy‐ and impurity‐induced layer disordering of AlxGa1−xAs‐GaAs quantum‐well heterostructure (QWH) crystals that utilize SiO2 and Si3N4 diffusion source layers. The SiO2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53036be733fd9a025c8a5e5edf322431
https://doi.org/10.1063/1.345070
https://doi.org/10.1063/1.345070
Publikováno v:
Applied Physics Letters. 66:127-129
An AlxGa1−xAs p‐n junction light emitting diode, with a thin In2O3 current spreading layer, on the top side, and an indirect band‐gap AlAs‐Al0.6Ga0.4As distributed Bragg reflector, on the bottom side, has been fabricated and characterized und
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd9a7c900b955150a65229eeb01e7012
https://doi.org/10.1063/1.113538
https://doi.org/10.1063/1.113538
Publikováno v:
[1991] Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits.
A unified process for integrating lasers, detectors, modulators, and waveguides for optoelectronic integrated circuits (OEICs) on a single substrate is described. The devices are fabricated from a quantum well heterostructure (QWH). Initial efforts h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68f7b586dcf0034ddc1efe8b39dd4959
https://doi.org/10.1109/cornel.1991.169992
https://doi.org/10.1109/cornel.1991.169992
Autor:
M. J. Ries, Robert D. Burnham, S. C. Smith, Nick Holonyak, Michael R. Krames, S. J. Caracci, F. A. Kish
Publikováno v:
Applied Physics Letters. 62:1006-1008
AlxGa1−xAs‐GaAs quantum well heterostructure (QWH) laser diodes with much thinner upper confining layers (0.6, 0.45, 0.3, and 0.2 μm) than usual (1–2 μm) are demonstrated. The diodes exhibit well behaved transverse far‐field patterns, low b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c02aa6711fd5cae15c914d64e6125401
https://doi.org/10.1063/1.108563
https://doi.org/10.1063/1.108563
Autor:
S. C. Smith, Robert D. Burnham, F. A. Kish, Steven A Maranowski, Nick Holonyak, S. J. Caracci
Publikováno v:
Applied Physics Letters. 61:321-323
High‐performance planar ‘‘buried‐mesa’’ index‐guided AlGaAs‐GaAs quantum well heterostructure (QWH) lasers have been fabricated by oxidation (H2O vapor+N2 carrier gas, 425–525 °C) of a significant thickness of the high composition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f03749a6070f9aeb98082d49b7914d62
https://doi.org/10.1063/1.107924
https://doi.org/10.1063/1.107924
Publikováno v:
Applied Physics Letters. 60:1776-1778
Process conditions for fabricating ridge geometry AlxGa1−xAs‐GaAs quantum well heterostructure laser arrays utilizing a high quality self‐aligned native oxide of AlxGa1−xAs are presented. Wet oxidation is performed, after etching ridges, via
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42c236413ba9c702de312ce04d326e86
https://doi.org/10.1063/1.107184
https://doi.org/10.1063/1.107184
Autor:
Robert D. Burnham, Nick Holonyak, F. A. Kish, Steven A Maranowski, S. J. Caracci, S. C. Smith
Publikováno v:
Applied Physics Letters. 60:1582-1584
Native‐oxide planar AlxGa1−xAs‐GaAs quantum well heterostructure ring laser diodes (25‐μm‐ wide annulus, 250‐μm inside diameter, 300‐μm outside diameter) are demonstrated. The curved cavities (full‐ring, half‐ring, and quarter‐
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d6726041370b4c527c2341b4a1dc877
https://doi.org/10.1063/1.107258
https://doi.org/10.1063/1.107258