Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Robert Chivas"'
Autor:
Michael Beal, Nathan Bakken, Mike DiBattista, Scott Silverman, Ilya Artishuk, Robert Chivas, Vladimir V. Vlasyuk
Publikováno v:
Scopus-Elsevier
Infrared optical probing techniques that have significant applications to and continued development for silicon physical debug have existed for decades. More recently, resolution enhancement achieved by improving numerical aperture, etc. have reached
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c21294afee5cd2a142c0edcf3fbe56b8
https://doi.org/10.31399/asm.cp.istfa2019p0454
https://doi.org/10.31399/asm.cp.istfa2019p0454
Publikováno v:
International Symposium for Testing and Failure Analysis.
Anticipating the end of life for IR-based failure analysis techniques, a method of global backside preparation to ultra-thin remaining silicon thickness (RST) has been developed. When the remaining silicon is reduced, some redistribution of stress is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e6049008005533034b758036dbb01c1
https://doi.org/10.31399/asm.cp.istfa2016p0166
https://doi.org/10.31399/asm.cp.istfa2016p0166
Autor:
Robert Chivas, Ulrike Ganesh, Scott Silverman, Yoshitaka Iwaki, Marco Jagodzinski, Heiko Lohrke, Stefan Kühne, Philipp Scholz, Eckart Uhlmann, Christian Boit, A. Beyreuther
Publikováno v:
International Symposium for Testing and Failure Analysis.
The visible approach of optical Contactless Fault Isolation (VIS-CFI) serves the perspective of application in FinFET technologies of 10 nm nodes and smaller. A solid immersion lens (SIL) is mandatory to obtain a proper resolution. A VISCFI setup wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::803ad7702328c24f6dd4de27a9063893
https://doi.org/10.31399/asm.cp.istfa2016p0019
https://doi.org/10.31399/asm.cp.istfa2016p0019
Publikováno v:
Journal of Electronic Materials. 41:2790-2794
Pulsed laser-assisted chemical etching (PLACE) offers an advanced, novel substrate preparation method for molecular beam epitaxy (MBE) growth of mercury cadmium telluride on silicon (112) wafers. By controlling the laser fluence, the chemical etch pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a05afae0a982d3209045f8bb221508c
https://doi.org/10.1007/s11664-012-2130-6
https://doi.org/10.1007/s11664-012-2130-6
Publikováno v:
Optical Materials. 33:1829-1832
We have used aerosol deposition to synthesize defect and micro-strain free, ultra-pure germanium nanoparticles. Transmission electron microscopy images show a core–shell configuration with highly crystalline core material. Powder X-ray diffraction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7b2e52928681cb1b8ded43594817eae
https://doi.org/10.1016/j.optmat.2011.07.009
https://doi.org/10.1016/j.optmat.2011.07.009
Publikováno v:
International Symposium for Testing and Failure Analysis.
Anticipating the end of life for IR-based failure analysis techniques, a method of global backside preparation to ultra-thin remaining silicon thickness (RST) has been developed. Ultra-thin RST enables VIS light techniques such as laser voltage probi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a25bac02ad4d97c0255d08a2a8d3a6b8
https://doi.org/10.31399/asm.cp.istfa2015p0460
https://doi.org/10.31399/asm.cp.istfa2015p0460
Autor:
V. Carter Hodges, Jeffery Stevens, Edward I. Cole, Joshua Beutler, Robert Chivas, Scott Silverman, J. Joseph Clement
Publikováno v:
International Symposium for Testing and Failure Analysis.
Visible light laser voltage probing (LVP) for backside improved optical spatial resolution is demonstrated on ultrathinned bulk Si samples. A prototype system for data acquisition, a method to produce ultra-thinned bulk samples as well as LVP signal,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f216aca240a324c1821bf9f326f36ca3
https://doi.org/10.31399/asm.cp.istfa2015p0006
https://doi.org/10.31399/asm.cp.istfa2015p0006
Autor:
Robert Chivas, Scott Silverman
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
Preparation of packaged integrated circuits for physical and electrical failure analysis often involves precise grinding and polishing of the thick silicon substrate from the backside. In this work we present an adaptive grinding and polishing techni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b867f5f2e97836780323a6e9d7e498d4
https://doi.org/10.1109/irps.2014.6861143
https://doi.org/10.1109/irps.2014.6861143
Preparation of Wafer Level Packaged Integrated Circuits Using Pulsed Laser Assisted Chemical Etching
Publikováno v:
Scopus-Elsevier
Pulsed Laser Assisted Chemical Etching (PLACE) is an advanced method of surface preparation that etches backside silicon to ultra-thin remaining layer thickness for Focused Ion Beam (FIB) circuit edit and failure analysis of Wafer Level Packages (WLP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::831448b22b4890763becc5ba2515eb29
https://doi.org/10.31399/asm.cp.istfa2012p0491
https://doi.org/10.31399/asm.cp.istfa2012p0491
Publikováno v:
2012 IEEE International Reliability Physics Symposium (IRPS).
Pulsed Laser Assisted Chemical Etching (PLACE) is an advanced method of surface preparation for analytic investigations such as: Focused Ion Beam (FIB) circuit edit, Failure Analysis chemical processes (poly-Si etch), Backside SIMS and Optical techni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ea5b5a5d2d8c1a14bdace295eaf982f
https://doi.org/10.1109/irps.2012.6241787
https://doi.org/10.1109/irps.2012.6241787