Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Robert Callanan"'
Autor:
Aivars J. Lelis, Lin Cheng, Craig Capell, Robert Callanan, Sarit Dhar, John W. Palmour, Michael J. O'Loughlin, Anant K. Agarwal, Charles Scozzie, Sei Hyung Ryu, Albert A. Burk, Charlotte Jonas
Publikováno v:
Materials Science Forum. :1059-1064
We present our recent developments in 4H-SiC power DMOSFETs. 4H-SiC DMOSFETs with a room temperature specific on-resistance of 3.7 mΩ-cm2 with a gate bias of 20 V, and an avalanche voltage of 1550 V with gate shorted to source, was demonstrated. A t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a381b58557fc87fe1d694c1dc08405d
https://doi.org/10.4028/www.scientific.net/msf.717-720.1059
https://doi.org/10.4028/www.scientific.net/msf.717-720.1059
Autor:
Al Burk, John W. Palmour, Sei-Hyung Ryu, Brett Hull, Anant K. Agarwal, Q. Zhang, Mrinal K. Das, Robert Callanan, Lin Cheng, Michael J. O'Loughlin
Publikováno v:
ECS Transactions. 41:3-7
Silicon carbide (SiC) materials technology has made rapid advances in recent years. While increasing the wafer diameter from 75 mm to 100 mm, the substrate quality has been greatly improved with much reduced defect density, resulting in higher device
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2cdedb3b1a984ef33090f200e244d01
https://doi.org/10.1149/1.3631480
https://doi.org/10.1149/1.3631480
Autor:
Victor Temple, Heather O'Brien, Jon Zhang, Charles Scozzie, Aderinto Ogunniyi, William Shaheen, Anant K. Agarwal, Robert Callanan, Aivars J. Lelis
Publikováno v:
Solid-State Electronics. 54:1232-1237
Silicon Carbide (SiC) is an extremely attractive material for semiconductor power devices because of its electrical and physical characteristics. This paper describes the benefits of utilizing SiC Super Gate Turn-Off thyristors (SGTO) in pulsed power
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d63e1cb9f89576ed90620ce31509663e
https://doi.org/10.1016/j.sse.2010.05.018
https://doi.org/10.1016/j.sse.2010.05.018
Autor:
Robert Callanan, Albert A. Burk, John W. Palmour, Anant K. Agarwal, Qing Chun Jon Zhang, Charles Scozzie, Michael J. O'Loughlin
Publikováno v:
Materials Science Forum. :1025-1028
4H-SiC Bipolar Junction Transistors (BJTs) and hybrid Darlington Transistors with 10 kV/10 A capability have been demonstrated for the first time. The SiC BJT (chip size: 0.75 cm2 with an active area of 0.336 cm2) conducts a collector current of 10 A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1c5e02595485535c4e3835151c8d4784
https://doi.org/10.4028/www.scientific.net/msf.645-648.1025
https://doi.org/10.4028/www.scientific.net/msf.645-648.1025
Autor:
Joshua D. Caldwell, Qing Chun Jon Zhang, Michael J. O'Loughlin, Charles Scozzie, Heather O'Brian, Albert A. Burk, Victor Temple, Craig Capell, Robert E. Stahlbush, Anant K. Agarwal, John W. Palmour, Robert Callanan
Publikováno v:
Materials Science Forum. :1017-1020
In this paper, for the first time, we report a large area (1 cm2) SiC GTO with 9 kV blocking voltage fabricated on 100-mm 4H-SiC substrates with much reduced Basal Plane Dislocation (BPD) density. The static and dynamic characteristics are described.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::664358cf6000b31df1d91dfebf2b125e
https://doi.org/10.4028/www.scientific.net/msf.645-648.1017
https://doi.org/10.4028/www.scientific.net/msf.645-648.1017
Autor:
Charlotte Jonas, Robert Callanan, Michael J. O'Loughlin, John W. Palmour, Sei Hyung Ryu, Anant K. Agarwal, Brett Hull, Mrinal K. Das, Jim Richmond, Fatima Husna, Charles Scozzie
Publikováno v:
Materials Science Forum. :749-752
Large area (8 mm x 7 mm) 1200 V 4H-SiC DMOSFETs with a specific on-resistance as low as 9 m•cm2 (at VGS = 20 V) able to conduct 60 A at a power dissipation of 200 W/cm2 are presented. On-resistance is fairly stable with temperature, increasing f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c850c20588695c9822c65dc98d084c6e
https://doi.org/10.4028/www.scientific.net/msf.615-617.749
https://doi.org/10.4028/www.scientific.net/msf.615-617.749
Autor:
Jim Richmond, Q. Jon Zhang, Craig Capell, Mrinal K. Das, Matthew Donofrio, Fatima Husna, Charlotte Jonas, Jack Clayton, Robert Callanan, Sarah K. Haney, Joseph John Sumakeris
Publikováno v:
Materials Science Forum. :1183-1186
For the first time, high power 4H-SiC n-IGBTs have been demonstrated with 13 kV blocking and a low Rdiff,on of 22 mWcm2 which surpasses the 4H-SiC material limit for unipolar devices. Normally-off operation and >10 kV blocking is maintained up to 200
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0aeb214ccb7be52f205a49c570f7a93
https://doi.org/10.4028/www.scientific.net/msf.600-603.1183
https://doi.org/10.4028/www.scientific.net/msf.600-603.1183
Autor:
Jonathan Young, Q. Jon Zhang, Albert A. Burk, Anant K. Agarwal, Charlotte Jonas, Charles Scozzie, Bruce Geil, John W. Palmour, Craig Capell, Robert Callanan
Publikováno v:
Materials Science Forum. :1159-1162
4H-SiC BJTs with a common emitter current gain (b) of 108 at 25°C have been demonstrated. The high current gain was accomplished by using a base as thin as 0.25 μm. The current gain decreases at high temperatures but is still greater than 40 at 300
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9816376615e9a02b3b8528ef48a79ca6
https://doi.org/10.4028/www.scientific.net/msf.600-603.1159
https://doi.org/10.4028/www.scientific.net/msf.600-603.1159
Autor:
Robert Callanan, Masaki Hisatsune, Kohei Shirabe, Henry Lin, Mahesh M. Swamy, Mrinal K. Das, Jun-Koo Kang
Publikováno v:
2013 IEEE Energy Conversion Congress and Exposition.
SiC devices are considered to be the next generation power device. This paper discusses thedesign of a Variable Frequency Drive (VFD) using a 6-in-1 power module that employs SiC-DMOSFETs and SiC Schottky Barrier Diodes (SBDs). A 400V class 11kW prot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb89ad3600cfa6e1419c60ecb8125192
https://doi.org/10.1109/ecce.2013.6647003
https://doi.org/10.1109/ecce.2013.6647003
Publikováno v:
2013 Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC).
This paper presents the third quadrant operating characteristics (VDS and ID both negative) of Cree's SiC MOSFETs. This work includes information regarding the body diode characteristics, reverse I-V characteristics for various values of positive and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a80f0ffe4be279b1b169e9163e4ab24
https://doi.org/10.1109/apec.2013.6520459
https://doi.org/10.1109/apec.2013.6520459