Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Robert Amantea"'
Autor:
Robert Amantea, M. ElSherbiny, Arye Rosen, Pradyumna Kumar Swain, D. McGee, F. McGinty, H.S. Owen, S.M. Perlow, Aly E. Fathy, G. Taylor
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 51:1650-1661
We report on an innovative reconfigurable antenna concept with significant practical relevance based on the dynamic definition of metal-like conductive plasma channels in high-resistivity silicon that are activated by the injection of DC current. The
Autor:
Robert Amantea, Jerome K. Butler, W. Janton, Arye Rosen, Paul J. Stabile, Aly E. Fathy, D. B. Gilbert, F. McGinty, D. Bechtle, Gary A. Evans
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 43:2117-2125
There has been a significant effort to develop millimeter-wave active-array antennas for communications and radar applications. A dielectric waveguide is a promising medium for this application. However, the integration of active devices, transmissio
Autor:
Robert Amantea, Jane Asmuth, David P. Bortfeld, Martin H. Czigler, Gerald E. Nostrand, Richard M. Peterson, Eugenio Martinez-Uriegas, David Zokaities
Publikováno v:
Color and Imaging Conference. 1:228-232
Publikováno v:
IEEE Transactions on Electron Devices. 39:581-586
Simulations of the electrical behavior of MOS-SOI devices pose a difficult numerical problem due to the floating substrate region. The numerical analysis techniques required to solve the floating region problem are discussed. Models for the carrier m
Publikováno v:
Optics letters. 14(1)
We have developed a network model for two-dimensional phase-locked arrays of coupled lasers that provides a basis for modeling arrays incorporating mixed coupling schemes. With this network approach we show that the modes of two-dimensional arrays th
Publikováno v:
Solid-State Electronics. 34:853-859
The effect of the edge parasitic transistor on MOSFET device characteristics fabricated on silicon-on-sapphire (SOS) wafers is analyzed with a new three-dimensional (3D) device simulator. The program performs a numerical solution of the basic semicon
Publikováno v:
IEEE Journal of Quantum Electronics. 27:1746-1752
The operating characteristics of a novel grating surface emitting laser structure containing a buried second-order grating have been studied both experimentally and theoretically. This device consists of a pumped distributed feedback (DFB) section th
Autor:
W.F. Ferguson, R. K. DeFreez, D.P. Bour, C.A. Wang, Jacob M. Hammer, H.K. Choi, R. E. Farkas, R.C. Lai, James N. Walpole, Jerome K. Butler, M. Lurie, P.F. Pelka, Marc K. Felisky, W. F. Reichert, J.B. Kirk, Nils W. Carlson, H. Lee, Robert Amantea, S.K. Liew, Gary A. Evans
Publikováno v:
IEEE Journal of Quantum Electronics. 27:1594-1608
Recent progress in the development of monolithic two-dimensional coherent grating surface emitting (GSE) laser arrays is presented. Such GSE arrays have operated continuously to more than 3 W/surface and pulsed to more than 30 W/surface. They have ac
Publikováno v:
IEEE Journal of Quantum Electronics. 26:1023-1038
The modes and threshold gain characteristics of two-dimensional grating-surface-emitting diode laser arrays that are evanescently coupled in the lateral direction and mutually injection coupled in the longitudinal direction are analyzed. The ratio of
Autor:
R. Menna, Robert Amantea, Joseph H. Abeles, Nils W. Carlson, S.K. Liew, E.A. Vangieson, Gary A. Evans, P. Gardner
Publikováno v:
13th IEEE International Semiconductor Laser Conference.
We present an experimental and theoretical study of the spatial dependence of the spectral linewidth of active grating-coupled surface-emitting amplified lasers. Good qualitative agreement between experiment and theory is obtained.