Zobrazeno 1 - 9 of 9 pro vyhledávání: '"Robert A. Youngman"'
1
Oxygen incorporation in aluminum nitride via extended defects: Part III. Reevaluation of the polytypoid structure in the aluminum nitride-aluminum oxide binary system
Autor: Alistair D. Westwoord, Michael R. Notis, Robert A. Youngman, Alasiair N. Cormack, Martha R. McCartney
Publikováno v: Journal of Materials Research. 10:2573-2585
This paper extends the concepts that were developed to explain the structural rearrangement of the wurtzite AlN lattice due to incorporation of small amounts of oxygen, and to directly use them to assist in understanding the polytypoid structures. Co
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::746d2847d7ec9583179f15457a11e890
https://doi.org/10.1557/jmr.1995.2573
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2
Oxygen incorporation in aluminum nitride via extended defects: Part II. Structure of curved inversion domain boundaries and defect formation
Autor: Michael R. Notis, Robert A. Youngman, Alastair N. Cormack, Martha R. McCartney, Alistair D. Westwood
Publikováno v: Journal of Materials Research. 10:1287-1300
Three distinct morphologies of curved (curved, facetted, and corrugated) inversion domain boundaries (IDB's), observed in aluminum nitride, have been investigated using conventional transmission electron microscopy, convergent beam electron diffracti
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::bb3327b2f86bb33dee83fc07fd18b893
https://doi.org/10.1557/jmr.1995.1287
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3
Oxygen incorporation in aluminum nitride via extended defects: Part I. Refinement of the structural model for the planar inversion domain boundary
Autor: Martha R. McCartney, Alistair D. Westwood, Alastair N. Cormack, Michael R. Notis, Robert A. Youngman
Publikováno v: Journal of Materials Research. 10:1270-1286
The model proposed by Harris et al. [J. Mater. Res. 5, 1763–1773 (1990)], describing planar inversion domain boundaries in aluminum nitride, consists of a basal plane of aluminum atoms octahedrally coordinated with respect to oxygen, and with a tra
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3eabcd6ad3a7c2d42ce7664814fb0ac2
https://doi.org/10.1557/jmr.1995.1270
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4
High-resolution electron microscopy of planar inversion domain boundaries in aluminum nitride
Autor: R. G. Teller, Robert A. Youngman, Martha R. McCartney
Publikováno v: Ultramicroscopy. 40:291-299
High-resolution electron microscopy has been utilized to elucidate the structural nature of oxygen-containing planar inversion domain boundaries in aluminum nitride. A model for this defect is proposed which incorporates the necessary structural elem
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::88a590d37bf4efec1db719ca2f510887
https://doi.org/10.1016/0304-3991(92)90126-5
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7
The Oxygen-Related Defect in Aluminum Nitride Ceramics: a Thermal Conduction Limiting Defect in a Technologically Important Material
Autor: Rudy Enck, Robert A. Youngman, Jonathan H. Harris
Publikováno v: MRS Proceedings. 323
Aluminum nitride (AlN) sintered ceramics are a critical new material for electronic packaging applications, principally because of AlN's high thermal conductivity and close thermal expansion match to silicon. AlN is expected to play a key role in the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7e41daa29966b46c52e1db2e02d48341
https://doi.org/10.1557/proc-323-171
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9
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