Zobrazeno 1 - 10
of 32
pro vyhledávání: '"Robert A. Pucel"'
Autor:
Robert A. Pucel
Publikováno v:
IEEE Microwave Magazine. 16:134-135
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38aeff7ba9e3da7aa416ceb9f479d925
https://doi.org/10.1109/mmm.2015.2410618
https://doi.org/10.1109/mmm.2015.2410618
Autor:
M Cobb, P. Saledas, W Struble, S. Shanfield, G. Jackson, M. Zaitlin, Michael G. Adlerstein, E. Tong, Robert A. Pucel
Publikováno v:
Solid-State Electronics. 38:1641-1644
A layout to minimize parasitic elements which reduce the common emitter Heterojunction Bipolar Transistor (HBT) gain and efficiency is described. Layout modifications are based upon consideration of the HBT device model that predicts better performan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c8194472918948e34fea8d4de213c61
https://doi.org/10.1016/0038-1101(95)00054-w
https://doi.org/10.1016/0038-1101(95)00054-w
Publikováno v:
IEEE Transactions on Electron Devices. 21:549-562
Small signal and noise characteristics for GaAs field-effect transistors are derived with the saturated drift velocity of the carriers underneath the gate taken into account. The noise contributed by the saturated carriers is nonnegligible and in mos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5bbc1a9f2fd350ef3ea9d880d0dc713b
https://doi.org/10.1109/t-ed.1974.17966
https://doi.org/10.1109/t-ed.1974.17966
Publikováno v:
IEEE Transactions on Electron Devices. 34:2565-2568
It is shown that source and drain charges are not state variables in an FET, especially for source-drain voltages near zero. This behavior, observed in the model proposed in [2], is a genuine manifestation of the physics of FET's and is not a sign of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0d14fd4436e0e9c7325f87bf67065d9
https://doi.org/10.1109/t-ed.1987.23353
https://doi.org/10.1109/t-ed.1987.23353
Publikováno v:
IEEE Transactions on Electron Devices. 34:160-169
We have developed a GaAs FET model suitable for SPICE Circuit simulations. The dc equations are accurate to about 1 percent of the maximum drain current. A simple but accurate interpolation formula for drain current as a function of gate-to-source vo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::426c9f301aeb86c56301bd604daffc2b
https://doi.org/10.1109/t-ed.1987.22902
https://doi.org/10.1109/t-ed.1987.22902
Publikováno v:
IEEE Transactions on Electron Devices. 23:1075-1085
The noise and signal properties of Read-type avalanche diodes under large-signal levels are examined. In contrast to most other previous theories, we include the saturation current in the equations rigorously from the beginning. We find that the nois
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3e7093c2bbc28a4e6e65d7cdddcdf18
https://doi.org/10.1109/t-ed.1976.18539
https://doi.org/10.1109/t-ed.1976.18539
Publikováno v:
IEEE Transactions on Electron Devices. 25:22-33
In this paper we show that very large displacement currents may flow in high power Read diodes, especially when they are operated in the pulsed mode. These displacement currents may have peak amplitudes which are larger than the maximum possible cond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::376b81ddbf1b1166af7037130b3757ee
https://doi.org/10.1109/t-ed.1978.19027
https://doi.org/10.1109/t-ed.1978.19027
Publikováno v:
IEEE Transactions on Electron Devices. 28:212-216
An important part of monolithic microwave integrated circuits are the passive distributed circuit elements which divide and combine RF signals. This paper describes the design and performance of a monolithic GaAs X-band three-port Wilkinson coupler [
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::45d287dd3eee69cca2332f7d736aa897
https://doi.org/10.1109/t-ed.1981.20313
https://doi.org/10.1109/t-ed.1981.20313
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 24:351-360
A theoretical analysis and experimental verification of the signal properties of the GaAs MESFET mixer are presented. Experimental techniques for evaluating some of the mixer parameters are described. Experiments performed on GaAs MESFET mixers at X
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1eaf2cfc4b3347617e2ef57ba582a61c
https://doi.org/10.1109/tmtt.1976.1128854
https://doi.org/10.1109/tmtt.1976.1128854
Autor:
Robert A. Pucel
Publikováno v:
IEEE Transactions on Microwave Theory and Techniques. 29:513-534
Monolithic microwave integrated circuits based on silicon-on-sapphire (SOS) and gallium arsenide technologies are being considered seriously as viable candidates for satellite communication systems, airborne radar, and other applications. The low-los
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd4351ec8e8653a121fd3b4183804d46
https://doi.org/10.1109/tmtt.1981.1130387
https://doi.org/10.1109/tmtt.1981.1130387