Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Rob van Ballegoij"'
Autor:
Kaustuve Bhattacharyya, Rudy Peters, Greet Storms, Diederik de Bruin, Jara G. Santaclara, Rob van Ballegoij, Eelco van Setten, Teun van Gogh
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6a1a308c004494b08b1ebb39702213f
https://doi.org/10.1117/12.2644966
https://doi.org/10.1117/12.2644966
Autor:
Jan van Schoot, Eelco van Setten, Jo Finders, Joerg Zimmermann, Judon Stoeldraijer, Peter Kuerz, Frank Bornebroek, Marco Pieters, Kars Zeger Troost, Winfried Kaiser, Sjoerd Lok, Rob van Ballegoij, Paul Graeupner
Publikováno v:
Extreme Ultraviolet (EUV) Lithography X
While EUV systems equipped with a 0.33 Numerical Aperture (NA) lens are readying to start high volume manufacturing, ASML and ZEISS are in parallel ramping up their activities on an EUV exposure tool with an NA of 0.55. The purpose of this high-NA sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b33389c9b6aea9bf34aa9eed761bd8cd
Autor:
Jan van Schoot, Kars Zeger Troost, Sascha Migura, Tilmann Heil, Jos Benschop, Hans Meiling, Sjoerd Lok, Jo Finders, Peter Krabbendam, Rob van Ballegoij, Judon Stoeldraijer, Eelco van Setten, Peter Kuerz, Bernhard Kneer, Winfried Kaiser, Frank Bornebroek
Publikováno v:
Extreme Ultraviolet (EUV) Lithography IX
While 0.33NA EUV systems are readying to start volume manufacturing, ASML and Zeiss are ramping up development activities on a 0.55NA EUV exposure tool, extending Moore’s law throughout the next decade. A novel, anamorphic lens design, has been dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f1710a4c3afccd08db4fa6c7e3287a5
https://doi.org/10.1117/12.2295800
https://doi.org/10.1117/12.2295800
Autor:
Toine de Kort, Matthew McLaren, Wim de Boeij, Roelof de Graaf, Stefan Weichselbaum, Frank Bornebroek, Herman Botter, Rob van Ballegoij, Richard Droste
Publikováno v:
SPIE Proceedings.
Progressing towards the 10nm and 7nm imaging node, pattern-placement and layer-to-layer overlay requirements keep on scaling down and drives system improvements in immersion (ArFi) and dry (ArF/KrF) scanners. A series of module enhancements in the NX
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e6b430b2275a1c6c29ca7d9f7b837d6
https://doi.org/10.1117/12.2087112
https://doi.org/10.1117/12.2087112
Autor:
Igor Bouchoms, Stefan Weichselbaum, Pieter Gunter, Jan Jaap Kuit, Martijn Leenders, Rob van Ballegoij, Bart Dinand Paarhuis, Marcel Hendrikus Maria Beems, Roelof de Graaf, Martin Verhoeven, Robert Kazinczi
Publikováno v:
SPIE Proceedings.
Mainstream high-end lithography is currently focusing on 32 nm node and 22 nm node where 1.35 NA immersion technology is well established for the most critical layers. Double-patterning and spacer-patterning techniques have been developed and are bei
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0136c1d71027d5e5724d07e1917c23d7
https://doi.org/10.1117/12.915807
https://doi.org/10.1117/12.915807
Autor:
Frank Bornebroek, Judon Stoeldraijer, Hans Meiling, Peter Kuerz, Jens Timo Neumann, Sjoerd Lok, Erik Roelof Loopstra, Kars Zeger Troost, Eelco van Setten, Jos Benschop, Tilmann Heil, Jo Finders, Peter Krabbendam, Winfried Kaiser, Rob van Ballegoij, Bernhard Kneer, Jan van Schoot, Sascha Migura
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2017
While EUV systems equipped with a 0.33 Numerical Aperture lenses are readying to start volume manufacturing, ASML and Zeiss are ramping up their activities on a EUV exposure tool with Numerical Aperture of 0.55. The purpose of this scanner, targeting
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3946d6d4bf434ebc5587638befd007ce
Autor:
Greet Storms, Sjoerd Lok, Rob van Ballegoij, Jan van Schoot, Rudy Peeters, Diederik de Bruin, Kars Troost, Teun van Gogh
Publikováno v:
Optical and EUV Nanolithography XXXV
SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States
SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::03558a12fb1ca8b36da13436b61c7667
Autor:
Winfried Kaiser, Eelco van Setten, Sjoerd Lok, Kars Zeger Troost, Hans Meiling, Frank Bornebroek, Jo Finders, Judon Stoeldraijer, Peter Kuerz, Paul Graeupner, Jan van Schoot, Bernhard Kneer, Erik Roelof Loopstra, Sascha Migura, Rob van Ballegoij
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2018
While EUV systems equipped with a 0.33 Numerical Aperture (NA) lens are readying to start high volume manufacturing, ASML and Zeiss are in parallel ramping up their activities on an EUV exposure tool with an NA of 0.55. The purpose of this high-NA sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bd101de13cb065cb1e76c76156c086fe
Autor:
Uwe Stamm, Jo Finders, Jan van Schoot, Jos Benschop, Eelco van Setten, Judon Stoeldraijer, Sascha Migura, Winfried Kaiser, Bernd Thuering, Niclas Mika, Peter Krabbendam, Bernhard Kneer, Tilmann Heil, Kars Zeger Troost, Rob van Ballegoij, Erik Roelof Loopstra, Jeannot Dredonx, Hans Meiling, Alberto Pirati
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VIII
While EUV systems equipped with a 0.33 Numerical Aperture lenses are readying to start volume manufacturing, ASML and Zeiss are ramping up their development activities on a EUV exposure tool with Numerical Aperture greater than 0.5. The purpose of th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68a7dec32f2aad60f2519b66c46f6ca0