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pro vyhledávání: '"Riwang Huang"'
Publikováno v:
Energy Reports, Vol 9, Iss , Pp 1432-1446 (2023)
The insulated gate bipolar transistor (IGBT) is widely used in the power electronic system, but its aging state is difficult to predict in advance due to the complicated failure mechanism, which will affect the performance of the equipment, and even
Externí odkaz:
https://doaj.org/article/a3a9d95122fd45eb92b3f8db9da20125
