Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Ritwik Sharma"'
Autor:
Peter T. H. Pang, Tim Dietrich, Michael W. Coughlin, Mattia Bulla, Ingo Tews, Mouza Almualla, Tyler Barna, Ramodgwendé Weizmann Kiendrebeogo, Nina Kunert, Gargi Mansingh, Brandon Reed, Niharika Sravan, Andrew Toivonen, Sarah Antier, Robert O. VandenBerg, Jack Heinzel, Vsevolod Nedora, Pouyan Salehi, Ritwik Sharma, Rahul Somasundaram, Chris Van Den Broeck
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-13 (2023)
Abstract The multi-messenger detection of the gravitational-wave signal GW170817, the corresponding kilonova AT2017gfo and the short gamma-ray burst GRB170817A, as well as the observed afterglow has delivered a scientific breakthrough. For an accurat
Externí odkaz:
https://doaj.org/article/83e0219b0d0541b699d4f33d76fa54fd
Autor:
Maria G. Dainotti, Ritwik Sharma, Aditya Narendra, Delina Levine, Enrico Rinaldi, Agnieszka Pollo, Gopal Bhatta
Publikováno v:
The Astrophysical Journal Supplement Series, Vol 267, Iss 2, p 42 (2023)
Gamma-ray bursts (GRBs), as they are observed at high redshift ( z = 9.4), are vital to cosmological studies and investigating Population III stars. To tackle these studies, we need correlations among relevant GRB variables with the requirement of sm
Externí odkaz:
https://doaj.org/article/23968adc85d64dcd9e1a21c8afd36cc9
Autor:
Teresa Carmel Aruja, Ritwik Sharma, Vikas Dhiman, Shyam Chand, Prashant Choudhary, Neha Kondal
Publikováno v:
Materials Today: Proceedings.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::583f637cb27608519067b8c14b1b4a79
https://doi.org/10.1016/j.matpr.2022.11.105
https://doi.org/10.1016/j.matpr.2022.11.105
Autor:
Ritwik Sharma, Yash Singhai
Coronary illness finding has turned into a troublesome assignment in the field of medication. This analysis relies upon an intensive and precise investigation of the patient's clinical tests information on the wellbeing history of a person. The colos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3dece3c4930bbf861e46028f3d8d6f2c
Autor:
Ritwik Sharma, Dharmendra Singh Yadav
Publikováno v:
2021 International Conference on Communication, Control and Information Sciences (ICCISc).
We have studied the impact of temperature variation on Dual Metal Gate GaSb-Si NWTFET device performance. Variations in DC parameters namely the transfer characteristics, Threshold Voltage, I on /I off Ratio, Subthreshold Swing has been investigated
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b1a9c015f46caa9cfb48d62b7a5f16f
https://doi.org/10.1109/iccisc52257.2021.9484926
https://doi.org/10.1109/iccisc52257.2021.9484926
Autor:
Atul Kumar, Somya Saraswat, Ritwik Sharma, Dharmendra Singh Yadav, Sachin Kumar, Nitish Parmar
Publikováno v:
2020 IEEE International Students' Conference on Electrical,Electronics and Computer Science (SCEECS).
A Nanowire TFET device employing a Dual Metal Gate along with a combination of lower energy band gap III- V material for the source and Doping Pockets around the SC- junction to boost On-current is proposed. Gaussian Doping is exploited on the Drain
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7141cb408f9e6d9b87e872ccc70235a8
https://doi.org/10.1109/sceecs48394.2020.113
https://doi.org/10.1109/sceecs48394.2020.113
Autor:
Ritwik Sharma, Dharmendra Singh Yadav, Nitish Parmar, Atul Kumar, Sachin Kumar, Somya Saraswat
Publikováno v:
2020 IEEE International Students' Conference on Electrical,Electronics and Computer Science (SCEECS).
In this paper, a novel device structure is introduced to enhance ON-state current, reduce ambipolar behaviour and better subthreshold swing which is named as step channel tunnel FETs (SC-TFET). This device use small dielectric thickness at source-cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::50a445febfce9c0ecc6393648bbaf2e8
https://doi.org/10.1109/sceecs48394.2020.104
https://doi.org/10.1109/sceecs48394.2020.104
Autor:
Nitish Parmar, Dharmendra Singh Yadav, Ritwik Sharma, Somya Saraswat, Sachin Kumar, Atul Kumar
Publikováno v:
2020 IEEE International Students' Conference on Electrical,Electronics and Computer Science (SCEECS).
Improvement in current driving capability, steep subthreshold slope and reduction in ambipolarity are the prerequisite for FET's to make better Analog/RF circuit applications. So, this paper describes a novel structure of a charge plasma Tunnel FET w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b21c7d712d06a43c092cb2288562298
https://doi.org/10.1109/sceecs48394.2020.112
https://doi.org/10.1109/sceecs48394.2020.112
Autor:
Shubham Harnal, Ritwik Sharma
Publikováno v:
International Journal of Image Processing and Vision Science. :114-116
The median filter is an important filter in many image processing algorithms and especially in removal of salt and pepper noise. Traditional median filters either focus on improving the performance or the quality of the median filtering. Generally, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32b366435883d22902b085d503dd383b
https://doi.org/10.47893/ijipvs.2012.1020
https://doi.org/10.47893/ijipvs.2012.1020