Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Ritsuo Sudo"'
Autor:
Kunihiro Suzuki, Ritsuo Sudo
Publikováno v:
Solid-State Electronics. 44:2253-2257
By expanding our previously proposed analytical expression for dose-dependent ion-implanted impurity concentration profiles using a main function and a tail function, we improve the model so that the parameters can be extracted more robustly and exte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3647c795e7f6d86337960ea34df2cd8c
https://doi.org/10.1016/s0038-1101(00)00219-7
https://doi.org/10.1016/s0038-1101(00)00219-7
Autor:
Kunihiro Suzuki, Ritsuo Sudo
Publikováno v:
Solid-State Electronics. 44:1043-1047
We collected data of ion-implantation profiles using Monte Carlo simulation, and showed that these profiles can readily be expressed by a joined half Gaussian function. We extracted parameters of the joined half Gaussian function from the Monte Carlo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::231a3b4e47a6df747ecf4de68b43a246
https://doi.org/10.1016/s0038-1101(99)00326-3
https://doi.org/10.1016/s0038-1101(99)00326-3
Comprehensive analytical expression for dose dependent ion-implanted impurity concentration profiles
Publikováno v:
Solid-State Electronics. 42:1671-1678
We propose an analytical expression for dose dependent ion-implanted impurity concentration profiles using a main function and a tail function. The main function describes the profile near the peak region and the tail function describes the channelin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::30a96210eb63d4872af5f33c4af6f4d6
https://doi.org/10.1016/s0038-1101(98)00145-2
https://doi.org/10.1016/s0038-1101(98)00145-2
Akademický článek
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Conference
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Publikováno v:
Proceedings of International Workshop on Numerical Modeling of processes & Devices for Integrated Circuits: NUPAD V; 1994, p181-184, 4p
Publikováno v:
IEEE Transactions on Electron Devices; Dec2001, Vol. 48 Issue 12, p2803, 5p, 2 Diagrams, 5 Charts
Publikováno v:
IEEE Transactions on Electron Devices; Jul2002, Vol. 49 Issue 7, p1312, 3p, 6 Graphs
Autor:
Kunihiro Suzuki
Ion Implantation and Activation – Volume 1 presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories. Ion implantation can be expre
Autor:
Kunihiro Suzuki
Ion Implantation and Activation – Volume 2 presents the derivation process of related models in a comprehensive step by step manner starting from the fundamental processes and moving up into the more advanced theories. Ion implantation can be expre