Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Riteshkumar Vishwakarma"'
Autor:
Riteshkumar Vishwakarma, Rucheng Zhu, Amr Attia Abuelwafa, Yota Mabuchi, Sudip Adhikari, Susumu Ichimura, Tetsuo Soga, Masayoshi Umeno
Publikováno v:
ACS Omega, Vol 4, Iss 6, Pp 11263-11270 (2019)
Externí odkaz:
https://doaj.org/article/207437fc27ae43308022e6376eaf3ad0
Publikováno v:
RSC Advances. 12:20610-20617
Microwave plasma chemical vapor deposition is a well-known method for low-temperature, large-area direct graphene growth on any insulating substrate without any catalysts. However, the quality has not been significantly better than other graphene syn
Autor:
Susumu Ichimura, Sudip Adhikari, Riteshkumar Vishwakarma, A.A. Abuelwafa, Masayoshi Umeno, Tetsuo Soga, Yota Mabuchi, Rucheng Zhu
Publikováno v:
ACS Omega
ACS Omega, Vol 4, Iss 6, Pp 11263-11270 (2019)
ACS Omega, Vol 4, Iss 6, Pp 11263-11270 (2019)
With a combination of outstanding properties and a wide spectrum of applications, graphene has emerged as a significant nanomaterial. However, to realize its full potential for practical applications, a number of obstacles have to be overcome, such a
Publikováno v:
Nanotechnology. 32(30)
Controlled graphene growth on a substrate without the use of catalysts is of great importance for industrial applications. Here, we report thickness-controlled graphene growth directly on a silicon substrate placed in a low-density microwave plasma e
Autor:
Tetsuo Soga, Masayoshi Umeno, Sudip Adhikari, Rucheng Zhu, Riteshkumar Vishwakarma, A.A. Abuelwafa, Sahar Elnobi
Publikováno v:
Materials Chemistry and Physics. 263:124348
In this work, we study the role of laser irradiation in the control of the doping processing for directly grown graphene using microwave surface wave plasma chemical vapor deposition (MW-SWP-CVD) on the glass substrates. Raman spectrum and X-ray phot
Autor:
Riteshkumar Vishwakarma, Golap Kalita, Kazunari Takahashi, Subash Sharma, Mona Ibrahim Araby, Masaki Tanemura, Mohamad Saufi Rosmi, Masashi Kitazawa, Yuji Wakamatsu
Publikováno v:
RSC Adv.. 7:47353-47356
Graphene is generally synthesized at high temperatures. Here we demonstrate a simple method to synthesize graphene at 150 °C. Carbon foils were irradiated with Ar+ ions at 1 keV with a simultaneous supply of catalyst metal without any intentional he
Autor:
Golap Kalita, Suriani Abu Bakar, Kamal Prasad Sharma, Amutha Thangaraja, Yazid Yaakob, Subash Sharma, Masaki Tanemura, Sachin M. Shinde, Hajime Ohtani, Riteshkumar Vishwakarma, Mohamad Saufi Rosmi, Nor Dalila Abd Rahman
Publikováno v:
Materials Research Bulletin. 83:573-580
A technology for converting waste materials to high quality large-area monolayer graphene film can be significant and thereby obtaining high value-added product. Here, we revealed the transformation of waste chicken fat into uniform monolayer graphen
Autor:
Joseph P. Cline, Toshio Kawahara, Riteshkumar Vishwakarma, Golap Kalita, Subash Sharma, Rakesh D. Mahayavanshi, Masaki Tanemura, Kamal Prasad Sharma, Mohamad Saufi Rosmi, Remi Papon
Publikováno v:
physica status solidi (RRL) - Rapid Research Letters. 10:749-752
The CuNi binary alloy can be significant as a catalyst for nitrogen-doped (N-doped) graphene growth considering controllable solubility of both carbon and nitrogen atoms. Here, we report for the first time the possibility of synthesizing substitution
Autor:
Yazid Yaakob, Masaki Tanemura, Sachin M. Shinde, Golap Kalita, Chisato Takahashi, Riteshkumar Vishwakarma
Publikováno v:
Materials Letters. 177:89-93
Here, we demonstrate the synthesis of nitrogen-doped (N-doped) graphene using imidazole and melamine as two different nitrogen containing aromatic rings carbon precursors. Structure of N-doped graphene was investigated at different temperature (800
Autor:
Subash Sharma, Golap Kalita, Riteshkumar Vishwakarma, Masaki Tanemura, Kamal Prasad Sharma, Sachin M. Shinde, Amutha Thangaraja
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 79:13-19
Anisotropic etching of hexagonal boron nitride (h-BN) and boron–carbon–nitrogen (BCN) basal plane can be an exciting platform to develop well-defined structures with interesting properties. Here, we developed an etching process of atomically thin