Výsledky vyhledávání - "Risaletto, Damien"

Towards the implementation of diamond power devices in power converters and measurements of their switching losses

Autor: Rouger, Nicolas, Risaletto, Damien, LEFRANC, Pierre, Jeannin, Pierre-Olivier, Cagnol, Hugo, Perez, Gaëtan, Vinnac, Sébastien, Pernot, Julien, Eon, David, Gheeraert, Etienne

Publikováno v: Symposium EL04-Ultrawide Bandgap Materials, Devices and Systems
MRS Spring Meeting 2021
MRS Spring Meeting 2021, Apr 2021, Seattle, United States

International audience; Ultra wide bandgap (UWBG) materials such as monocrystalline diamond exhibit the best figure of merits for power semiconductor devices: the ultra-wide bandgap of 5.5eV translates into the highest electric field above 10MV/cm, w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::9e812b7c9b2e0d09f0d05384722648dc
https://hal.archives-ouvertes.fr/hal-03289135

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Akademický článek

A novel design approach for the epitaxial layer for 4H-SiC and 6H-SiC power bipolar devices

Autor: Ben Salah, Tarek, Garrab, Hatem, Ghedira, Sami, Allard, Bruno, Risaletto, Damien, Raynaud, Christophe, Besbes, Kamel, Morel, Hervé

Publikováno v: In Superlattices and Microstructures 2006 40(4):580-587

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Switching Optimization of WBG Power Devices on Inverter Leg

Autor: Rossignol, Timothé, RICHARDEAU, Frédéric, Blaquière, Jean-Marc, Risaletto, Damien, Senghor, F., Cousineau, Marc, AULAGNIER, GUILLAUME

Publikováno v: PCIM Europe 2013; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management
PCIM Europe 2013; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, May 2013, Nürnberg, Germany

International audience; In this paper the authors are interested by the switching optimisation of a SiC Power MOSFET in an inverter leg. The authors explain their efforts to build a test-bench that allows the extremely fast switching measurement of t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::2ab451ef9d8a32f3bf0edd23caf08176
https://hal.science/hal-02964301

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Ultrafast safety system to turn-off normally on SiC JFETs

Autor: Dubois, Fabien, Bergogne, Dominique, Risaletto, Damien, Perrin, Rémi, Zaoui, Abderrahime, Morel, Hervé, Meuret, Régis

Publikováno v: Proceedings of the IEEE 14th European Conference on Power Electronics and Applications
EPE
EPE, Aug 2011, Birmingham, United Kingdom. pp.CD

International audience; The use of normally on Silicon Carbide (SiC) JFET devices poses the question of safety and reliability in Voltage Fed Inverter (VFI) applications. Indeed, when a JFET is not driven with a sufficient negative voltage, the JFET

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::404b66be43211c65d8805cbd9a087c4c
https://hal.archives-ouvertes.fr/hal-00629232

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High Temperature Inverter for Airborne Application

Autor: Dubois, Fabien, Bergogne, Dominique, Risaletto, Damien, Robutel, Rémi, Morel, Hervé, Meuret, Régis, Dhokkar, Sonia

Publikováno v: Proceedings of the 2010 IMAPS International Conference and Exhibition on High Temperature Electronics
HiTEC 2010
HiTEC 2010, May 2010, Albuquerque, United States. pp.000222

International audience; This paper reports the design, fabrication and experimental performance of a 2kW, 20kHz, High Temperature, three-phase, all-SiC JFET Voltage Source Inverter (VSI). The inverter includes a specific JFET driver and a DC-link cap

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::266f1fb66af45d46f30defc8d0c90587
https://hal.archives-ouvertes.fr/hal-00485279

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Normally-On SiC JFETs in power converters: Gate driver and safe operation

Autor: Bergogne, Dominique, Risaletto, Damien, Dubois, Fabien, Hammoud, Asif, Morel, Hervé, Bevilacqua, Pascal, Allard, Bruno, Berry, Olivier, Meibody-Tabar, Farid, Rael, Stéphane, Meuret, Régis, Dhokkar, Sonia

Publikováno v: Proceedings of the 2010 6th International Conference on Integrated Power Electronics Systems
6th CIPS
6th CIPS, Mar 2010, Nuremberg, Germany. pp.CD

International audience; In this paper, the authors propose a solution to provide self protection in a normally-On JFET voltage fed inverter. The solution is a plug-in to an existing Gate driver. An overview of JFET Gate driving serves as an introduct

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::908bd70adc160bbc1d560a6628c762ff
https://hal.archives-ouvertes.fr/hal-00629214

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