Zobrazeno 1 - 10
of 107
pro vyhledávání: '"Rino Micheloni"'
Autor:
Giada Minghini, Armando Ugo Cavallo, Andrea Miola, Valentina Sisini, Enrico Calore, Francesca Fortini, Rino Micheloni, Paola Rizzo, Sebastiano Fabio Schifano, Francesco Vieceli Dalla Sega, Cristian Zambelli
Publikováno v:
IEEE Access, Vol 11, Pp 101309-101319 (2023)
Precise assessment of calcification lesions in the Aortic Root (AR) is relevant for the success of the Transcatheter Aortic Valve Implantation (TAVI) procedure. To this end, the radiologists analyze the Cardiac Computed Tomography (CCT) scans of pati
Externí odkaz:
https://doaj.org/article/8181d3406e3543d5a61954478dc4c9cb
Publikováno v:
Future Internet, Vol 15, Iss 10, p 319 (2023)
Solid-state drives represent the preferred backbone storage solution thanks to their low latency and high throughput capabilities compared to mechanical hard disk drives. The performance of a drive is intertwined with the reliability of the memories;
Externí odkaz:
https://doaj.org/article/a142f95533984e829869ec5ee3afb249
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 99-104 (2020)
This paper presents a new reliability threat that affects 3D-NAND Flash memories when a read operation is performed exiting from an idle state. In particular, a temporary large increase of the fail bits count is reported for the layers read as first
Externí odkaz:
https://doaj.org/article/9f5e9c5e9ca14ea3b767db5b44a4bb72
Autor:
Cristian Zambelli, Rino Micheloni
Publikováno v:
Micromachines, Vol 12, Iss 12, p 1566 (2021)
Flash memory devices represented a breakthrough in the storage industry since their inception in the mid-1980s, and innovation is still ongoing after more than 35 years [...]
Externí odkaz:
https://doaj.org/article/01f035d357b643df940a6db10d5a3291
Publikováno v:
Micromachines, Vol 12, Iss 7, p 759 (2021)
Data randomization has been a widely adopted Flash Signal Processing technique for reducing or suppressing errors since the inception of mass storage platforms based on planar NAND Flash technology. However, the paradigm change represented by the 3D
Externí odkaz:
https://doaj.org/article/286e55ee0932429b9bb4620627223058
Publikováno v:
Computers, Vol 6, Iss 3, p 27 (2017)
Nowadays, NAND Flash technology is everywhere, since it is the core of the code and data storage in mobile and embedded applications; moreover, its market share is exploding with Solid-State-Drives (SSDs), which are replacing Hard Disk Drives (HDDs)
Externí odkaz:
https://doaj.org/article/eae3d4734ab44773bb5388435f2f0455
Integrating FPGA Acceleration in the DNAssim Framework for Faster DNA-Based Data Storage Simulations
Autor:
Zambelli, Alessia Marelli, Thomas Chiozzi, Nicholas Battistini, Lorenzo Zuolo, Rino Micheloni, Cristian
Publikováno v:
Electronics; Volume 12; Issue 12; Pages: 2621
DNA-based data storage emerged in this decade as a promising solution for long data durability, low power consumption, and high density. However, such technology has not yet reached a good maturity level, requiring many investigations to improve the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=multidiscipl::6c5c9eb9183129529a2bd54ce6275386
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 21:486-493
The storage systems relying on the 3D NAND Flash technology require an extensive modeling of their reliability in different working corners. This enables the deployment of system-level management routines that do not compromise the overall performanc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d98359a5c5dad110c738ca8cdd3369c0
https://doi.org/10.1109/tdmr.2021.3108941
https://doi.org/10.1109/tdmr.2021.3108941
Publikováno v:
IEEE Transactions on Communications. 68:1358-1369
Non-binary low-density parity-check (NB-LDPC) codes are known to offer several advantages over their binary counterparts, but the higher complexity, and the resource-hungry nature of decoding algorithms have so far restricted their practical usage. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c9790fe8ce6b4e02bec693b7c7b07f6
https://doi.org/10.1109/tcomm.2019.2961884
https://doi.org/10.1109/tcomm.2019.2961884
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 99-104 (2020)
This paper presents a new reliability threat that affects 3D-NAND Flash memories when a read operation is performed exiting from an idle state. In particular, a temporary large increase of the fail bits count is reported for the layers read as first
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::02e537bc3a80e54def13baf1c9ae28af
https://ieeexplore.ieee.org/document/8956089/
https://ieeexplore.ieee.org/document/8956089/