Zobrazeno 1 - 10
of 365
pro vyhledávání: '"Rino, Choi"'
Autor:
An Hoang-Thuy Nguyen, Manh-Cuong Nguyen, Anh-Duy Nguyen, Seung Joon Jeon, Noh-Hwal Park, Jeong-Hwan Lee, Rino Choi
Publikováno v:
Nano Convergence, Vol 11, Iss 1, Pp 1-15 (2024)
Abstract The concept of three-dimensional stacking of device layers has attracted significant attention with the increasing difficulty in scaling down devices. Monolithic 3D (M3D) integration provides a notable benefit in achieving a higher connectio
Externí odkaz:
https://doaj.org/article/6715487770bd4c1ca5eef38c9a8113e2
Autor:
An Hoang-Thuy Nguyen, Manh-Cuong Nguyen, Anh-Duy Nguyen, Ji-Yong Yim, Jeong-Han Kim, No-Hwal Park, Seung-Joon Jeon, Daewoong Kwon, Rino Choi
Publikováno v:
Nano Convergence, Vol 9, Iss 1, Pp 1-6 (2022)
Abstract The effects of the grain size of Pt bottom electrodes on the ferroelectricity of hafnium zirconium oxide (HZO) were studied in terms of the orthorhombic phase transformation. HZO thin films were deposited by chemical solution deposition on t
Externí odkaz:
https://doaj.org/article/061b76401d534086b35212b5acd6bd3b
Autor:
An Hoang-Thuy Nguyen, Manh-Cuong Nguyen, Seongyong Cho, Anh-Duy Nguyen, Hyewon Kim, Yeongcheol Seok, Jiyeon Yoon, Rino Choi
Publikováno v:
Nano Convergence, Vol 7, Iss 1, Pp 1-6 (2020)
Abstract This paper presents a straightforward, low-cost, and effective integration process for the fabrication of membrane gate thin film transistors (TFTs) with an air gap. The membrane gate TFT with an air gap can be used as the highly sensitive t
Externí odkaz:
https://doaj.org/article/d874a5b6f2644037bd91d986d014a1b5
Autor:
Soi Jeong, Changhyeon Han, Jiyong Yim, Jeonghan Kim, Ki Ryun Kwon, Sangwoo Kim, Eun Chan Park, Ji Won You, Rino Choi, Daewoong Kwon
Publikováno v:
IEEE Electron Device Letters. 44:749-752
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be7ce7fc87d037809567c2ed3229be59
https://doi.org/10.1109/led.2023.3260860
https://doi.org/10.1109/led.2023.3260860
Autor:
An Hoang-Thuy Nguyen, Manh-Cuong Nguyen, Anh-Duy Nguyen, No-Hwal Park, Seung Joon Jeon, Daewoong Kwon, Rino Choi
Publikováno v:
IEEE Transactions on Electron Devices. 70:1085-1088
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ceb1762a4865caac2032beae7ea6dcc
https://doi.org/10.1109/ted.2023.3241119
https://doi.org/10.1109/ted.2023.3241119
Autor:
Dong‐Ho Kang, Jeong‐Hoon Kim, Seyong Oh, Hyung‐Youl Park, Sreekantha Reddy Dugasani, Beom‐Seok Kang, Changhwan Choi, Rino Choi, Sungjoo Lee, Sung Ha Park, Keun Heo, Jin‐Hong Park
Publikováno v:
Advanced Science, Vol 6, Iss 17, Pp n/a-n/a (2019)
Abstract A bioinspired neuromorphic device operating as synapse and neuron simultaneously, which is fabricated on an electrolyte based on Cu2+‐doped salmon deoxyribonucleic acid (S‐DNA) is reported. Owing to the slow Cu2+ diffusion through the ba
Externí odkaz:
https://doaj.org/article/c02151dc904747fba9d3ebf747dcec07
Autor:
Changhyeon Han, Seok Jin Kwon, Jiyong Yim, Jeonghan Kim, Sangwoo Kim, Soi Jeong, Eun Chan Park, Ji Won You, Rino Choi, Daewoong Kwon
Publikováno v:
IEEE Transactions on Electron Devices. 69:3499-3502
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::413e44d0ec22b220d149dc5459eaad0c
https://doi.org/10.1109/ted.2022.3168237
https://doi.org/10.1109/ted.2022.3168237
Autor:
Rino Choi, Daewoong Kwon, Sihyun Kim, Manh-Cuong Nguyen, Yeongjin Hwang, Sangwook Youn, Hyungjin Kim, Kitae Lee
Publikováno v:
IEEE Electron Device Letters. 43:17-20
We demonstrate a HfZrO2 (HZO) ferroelectric field-effect transistor fabricated on a silicon-on-insulator substrate, targeting MHz synaptic device applications. Stable multistate weights were implemented with robust retention, excellent linearity, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::693ff4bb861026116311b422f6d6bf99
https://doi.org/10.1109/led.2021.3127927
https://doi.org/10.1109/led.2021.3127927
Autor:
Hye Ryeon Park, Jeong Gyu Yoo, Jong Mook Kang, Min Kwan Cho, Taeho Gong, Seongbin Park, Seungbin Lee, Jin-HYun Kim, Seojun Lee, Rino Choi, Harrison Sejoon Kim, Yong Chan Jung, Jiyoung Kim, Si Joon Kim
Publikováno v:
2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4d526f9ecae4befa09c59a1dc5c6a69
https://doi.org/10.1109/edtm55494.2023.10103015
https://doi.org/10.1109/edtm55494.2023.10103015
Autor:
Changhyeon Han, Jiyong Yim, An Nguyen, Jeonghan Kim, Ki Ryun Kwon, Sangwoo Kim, Soi Jeong, Eun Chan Park, Ji Won You, Rino Choi, Daewoong Kwon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::19064909a0d0d1eae33d786a2c8c61e9
https://doi.org/10.2139/ssrn.4367954
https://doi.org/10.2139/ssrn.4367954
