Zobrazeno 1 - 10
of 195
pro vyhledávání: '"Rinio, M."'
Publikováno v:
Journal of Applied Physics; 2014, Vol. 116 Issue 1, p183511-1-183511-7, 7p, 1 Black and White Photograph, 2 Diagrams, 1 Chart, 4 Graphs
Autor:
Chen, M.C., Omanakuttan, G., Hansson, R., Strömberg, A., Hallén, A., Rinio, M., Lourdudoss, S., Sun, Y.-T.
36th European Photovoltaic Solar Energy Conference and Exhibition; 764-768
In this work, we investigated the Si pre-amorphization implantation (PAI) assisted low temperature annealing process to activate boron implantation in n-Si in a hydride v
In this work, we investigated the Si pre-amorphization implantation (PAI) assisted low temperature annealing process to activate boron implantation in n-Si in a hydride v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e139c2ca7fe57f528a21cca572c1c89d
Autor:
Pacho AP; Department of Engineering and Physics, Karlstad University, Karlstad 651 88, Sweden., Rinio M; Department of Engineering and Physics, Karlstad University, Karlstad 651 88, Sweden.
Publikováno v:
MethodsX [MethodsX] 2022 Aug 08; Vol. 9, pp. 101813. Date of Electronic Publication: 2022 Aug 08 (Print Publication: 2022).
35th European Photovoltaic Solar Energy Conference and Exhibition; 535-538
Crystal defects such as grain boundaries affect the overall performance of a solar cell. The light beam induced current method allows for the localized quantification of
Crystal defects such as grain boundaries affect the overall performance of a solar cell. The light beam induced current method allows for the localized quantification of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4041f069e04cd3a492cfc0de11d5ce87
Autor:
Rinio, M., Yodyunyong, A., Keipert-Colberg, S., Botchak Mouafi, Y.P., Borchert, D., Montesdeoca-Santana, A.
The influence of an annealing step at about 500°C after emitter diffusion of multicrystalline solar cells is investigated. Neighboring wafers from a silicon ingot were processed using different annealing durations and temperatures. The efficiency of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::92fc549e51149f4e5f3c9f94c0911b4c
https://publica.fraunhofer.de/handle/publica/224286
https://publica.fraunhofer.de/handle/publica/224286
Autor:
Mary Joy, R.M., Gautero, L., Keipert-Colberg, S., Rinio, M., Strola, S.A., Hanssen, M.S., Van De Sanden, M.C.M., Borsa, D.M., Bosch, R.C.M.
26th European Photovoltaic Solar Energy Conference and Exhibition; 2256-2259
The availability of industrial processes for the deposition of passivation dielectrics is a key factor for the realisation of cost effective highly efficient silicon so
The availability of industrial processes for the deposition of passivation dielectrics is a key factor for the realisation of cost effective highly efficient silicon so
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fc466233dc77ede7af6678ffe8cc991
Minority carrier recombination is studied in multicrystalline ingot cast silicon solar cells. The normalized recombination strength Gamma of dislocations is obtained by correlating topograms of the internal quantum efficiency (IQE) with those of the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::77593abfb011bc5cd8da87a1e5a0f45b
https://publica.fraunhofer.de/handle/publica/224865
https://publica.fraunhofer.de/handle/publica/224865
Autor:
Fenning, D.P., Hofstetter, J., Bertoni, M.I., Hudelson, S., Rinio, M., Lelievre, J.F., Lai, B., Canizo, C. del, Buonassisi, T.
The evolution during silicon solar cell processing of performance-limiting iron impurities is investigated with synchrotron-based x-ray fluorescence microscopy. We find that during industrial phosphorus diffusion, bulk precipitate dissolution is inco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______610::df0447144a9b30bde7f4e15c19fc5946
https://publica.fraunhofer.de/handle/publica/224831
https://publica.fraunhofer.de/handle/publica/224831
Autor:
Díaz-Herrera, B., Montesdeoca-Santana, A., Jiménez-Rodríguez, E., González-Diaz, B., Hernández-Rodríguez, C., Guerrero-Lemus, R., Rinio, M., Borchert, D.
24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany; 1934-1936
This paper discusses the gettering process during emitter diffusion in upgraded metallurgical grade (UMG) silicon and the effect of a subsequen
This paper discusses the gettering process during emitter diffusion in upgraded metallurgical grade (UMG) silicon and the effect of a subsequen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9ae0149042ce39820fd586530d47546
Autor:
Rinio, M., Yodyunyong, A., Pirker, M., Zhang, C., Günther, D., Botchak Mouafi, P., Keipert-Colberg, S., Borchert, D., Heuer, M., Montesdeoca-Santana, A.
24th European Photovoltaic Solar Energy Conference, 21-25 September 2009, Hamburg, Germany; 1816-1819
It was previously shown, that an additional low temperature (LT) anneal directly after phosphorus diffusion improves the efficiency of multicry
It was previously shown, that an additional low temperature (LT) anneal directly after phosphorus diffusion improves the efficiency of multicry
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2342332a8b31cd5bbb803868504f5be