Zobrazeno 1 - 10
of 501
pro vyhledávání: '"Ringel, Steven"'
Autor:
Kalarickal, Nidhin Kurian, Feng, Zixuan, Bhuiyan, A F M Anhar Uddin, Xia, Zhanbo, McGlone, Joe F., Moore, Wyatt, Arehart, Aaron R., Ringel, Steven A., Zhao, Hongping, Rajan, Siddharth
The performance of ultra-wide band gap materials like $\beta$-Ga$_\mathrm{2}$O$_\mathrm{3}$ is critically dependent on achieving high average electric fields within the active region of the device. In this report, we show that high-k gate dielectrics
Externí odkaz:
http://arxiv.org/abs/2006.02349
Autor:
Feng, Zixuan, Bhuiyan, A F M Anhar Uddin, Xia, Zhanbo, Moore, Wyatt, Chen, Zhaoying, McGlone, Joe F., Daughton, David R., Arehart, Aaron R., Ringel, Steven A., Rajan, Siddharth, Zhao, Hongping
A new record-high room temperature electron Hall mobility (${\mu}_{RT} = 194\space cm^{2}/V\space s$ at $n\sim 8\times 10^{15}\space cm^{-3}$) for ${\beta}$-Ga2O3 is demonstrated in the unintentionally doped thin film grown on (010) semi-insulating s
Externí odkaz:
http://arxiv.org/abs/2004.13089
Akademický článek
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Autor:
Xia, Zhanbo, Chandrasekar, Hareesh, Moore, Wyatt, Wang, Caiyu, Lee, Aidan, McGlone, Joe, Kalarickal, Nidhin Kurian, Arehart, Aaron, Ringel, Steven, Yang, Fengyuan, Rajan, Siddharth
Wide and ultra-wide band gap semiconductors can provide excellent performance due to their high energy band gap, which leads to breakdown electric fields that are more than an order of magnitude higher than conventional silicon electronics. In materi
Externí odkaz:
http://arxiv.org/abs/1911.02068
Autor:
Kalarickal, Nidhin Kurian, Xia, Zhanbo, McGlone, Joe, Krishnamoorthy, Sriram, Moore, Wyatt, Brenner, Mark, Arehart, Aaron R., Ringel, Steven A., Rajan, Siddharth
We report on the origin of high Si flux observed during the use of Si as a doping source in plasma assisted MBE growth of \b{eta}-Ga2O3. We show on the basis of secondary ion mass spectroscopy (SIMS) analysis that Si flux is not limited by the vapor
Externí odkaz:
http://arxiv.org/abs/1908.01101
Autor:
Johnson, Jared M., Chen, Zhen, Varley, Joel B., Jackson, Christine M., Farzana, Esmat, Zhang, Zeng, Arehart, Aaron R., Huang, Hsien-Lien, Genc, Arda, Ringel, Steven A., Van de Walle, Chris G., Muller, David A., Hwang, Jinwoo
Publikováno v:
Phys. Rev. X 9, 041027 (2019)
Understanding the unique properties of ultra-wide band gap semiconductors requires detailed information about the exact nature of point defects and their role in determining the properties. Here, we report the first direct microscopic observation of
Externí odkaz:
http://arxiv.org/abs/1907.00563
Autor:
Chandrasekar, Hareesh, Cheng, Junao, Wang, Tianshi, Xia, Zhanbo, Combs, Nicholas G., Freeze, Christopher R., Marshall, Patrick B., McGlone, Joe, Arehart, Aaron, Ringel, Steven, Janotti, Anderson, Stemmer, Susanne, Lu, Wu, Rajan, Siddharth
Publikováno v:
Appl. Phys. Lett. 115 , 092102 (2019)
BaSnO_{3}, a high mobility perovskite oxide, is an attractive material for oxide-based electronic devices. However, in addition to low-field mobility, high-field transport properties such as the saturation velocity of carriers play a major role in de
Externí odkaz:
http://arxiv.org/abs/1905.05112
Autor:
McGlone, Joe F., Ghadi, Hemant, Cornuelle, Evan, Armstrong, Andrew, Burns, George, Feng, Zixuan, Uddin Bhuiyan, A. F. M. Anhar, Zhao, Hongping, Arehart, Aaron R., Ringel, Steven A.
Publikováno v:
Journal of Applied Physics; 1/28/2023, Vol. 133 Issue 4, p1-8, 8p
Akademický článek
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