Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Rimma Zhytnytska"'
Autor:
Oliver Hilt, Rimma Zhytnytska, Arne Knauer, Frank Brunner, Joachim Würfl, Eldad Bahat-Treidel
Publikováno v:
MRS Bulletin. 40:418-424
Transistors with 600 V blocking capability and low switching losses are needed for converting one-phase 230 V mains voltage to lower voltage levels in switch-mode power supplies. The transistors operate as a switch and have to block the system voltag
Publikováno v:
IEEE Transactions on Electron Devices
Argon implantation of n-type SiC substrates prior to epitaxial growth of AlGaN/GaN HFETs stacks is used to decrease the vertical leakage to the conductive substrate. Normally-off p-GaN gate transistors with AlGaN-buffer and with iron-doped GaN-buffer
Autor:
Olaf Krüger, Joachim Würfl, Eldad Bahat-Treidel, Frank Brunner, Oliver Hilt, Przemyslaw Kotara, Rimma Zhytnytska, Markus Weyers
Publikováno v:
physica status solidi c. 10:1393-1396
Approaches towards fast switching GaN devices for applications in power electronics are presented. First, an overview on breakdown mechanisms in GaN power devices is given. Suitable techniques towards devices with high breakdown strength are then dis
Autor:
Markus Weyers, Eldad Bahat-Treidel, Frank Brunner, Melani Cho, Joachim Würfl, Arne Knauer, Oliver Hilt, Przemyslaw Kotara, Rimma Zhytnytska, O. Krueger
Publikováno v:
ECS Transactions. 50:211-222
High voltage GaN based transistors already showed promising de-vice properties which makes them very attractive for future highly efficient power switching application. To further optimize device switching performance at high bias voltages the depend
Autor:
Frank Brunner, Oliver Hilt, Przemyslaw Kotara, Rimma Zhytnytska, A. Thies, E. Cho, Eldad Bahat-Treidel, Joachim Würfl
Publikováno v:
ECS Journal of Solid State Science and Technology. 2:N3064-N3067
Autor:
Joachim Wuerfl, Oliver Hilt, Rimma Zhytnytska, Frank Brunner, Richard Lossy, Arne Knauer, P. Kurpas, E. Cho, S. Singwald, Ponky Ivo, Markus Weyers, M. Schulz, Eldad Bahat-Treidel
Publikováno v:
Microelectronics Reliability. 51:1710-1716
GaN based power devices for high efficiency switching applications in modern power electronics are rapidly moving into the focus of world wide research and development activities. Due to their unique material properties GaN power devices are distingu
Autor:
Sibylle Dieckerhoff, Arne Knauer, Frank Brunner, Oliver Hilt, Rimma Zhytnytska, Joachim Würfl, Eldad Bahat-Treidel, Jan Bocker
Publikováno v:
2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
The static and dynamic electrical performance of normally-off p-GaN gate AlGaN/GaN HFETs, manufactured on SiC and on Si substrates are compared. By implementing a p-type GaN gate, normally-off operation with 1 V threshold voltage has been realized fo
Autor:
Frank Brunner, Joachim Würfl, Oliver Hilt, Przemyslaw Kotara, Rimma Zhytnytska, L. Valik, Eldad Bahat-Treidel, M. Ťapajna, Jan Kuzmik
Publikováno v:
The Tenth International Conference on Advanced Semiconductor Devices and Microsystems.
Autor:
Gaudenzio Meneghesso, Oliver Hilt, Rimma Zhytnytska, Joachim Würfl, Sergey Bychikhin, Enrico Zanoni, Mattia Cappriotti, Clément Fleury, Joff Derluyn, Dionyz Pogany, Gottfried Strasser, Domenica Visalli
Publikováno v:
Microelectronics Reliability
We analyse vertical breakdown signatures in normally-off and normally-on AlGaN/GaN HEMTs on Si and SiC substrate for power applications. The probability distribution function of the breakdown voltage V BD values shows mostly a bimodal distribution th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bfdc11c2ddfd1b4a568753f6b116aed9
http://hdl.handle.net/11577/2693094
http://hdl.handle.net/11577/2693094
Autor:
Markus Weyers, Frank Brunner, Oliver Hilt, Przemyslaw Kotara, Rimma Zhytnytska, Olaf Krüger, Eldad Bahat-Treidel, Kirill Klein, Joachim Würfl, Günther Tränkle, A. Knauer
Publikováno v:
ECS Transactions
Approaches towards fast switching GaN devices for applications in power electronics are discussed. First, an overview on the most prominent techniques towards increased breakdown voltage will be given for devices grown on SiC and Si substrates. These