Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Rim Khelifi"'
Autism in patients with Williams-Beuren syndrome: A re-evaluation of 31 Tunisian patients’ phenotype
Autor:
Soumaya Mougou-Zerelli, Rim Khelifi, Afef Jelloul, Houda Ajmi, Sarra Dimassi, Wafa Slimani, Najla Soyeh, Khouloud Rjiba, Manel Dardour, Hamza Hadj Abdallah, Hend Dridi, Asma Guedria, Molka Kammoun, Hela Ben Khelifa, Hayet Mkadem, Ines Hssairi Guidara, Hayet Ben Hamida, Khaled Ben Helel, Habib Kharrat, Essia Sboui, Elies Naffeti, Naoufel Gaddour, Faouzi Maatouk, Hatem El Ghezal, Ali Saad, Ons Nouira, Afif Zouari
Background Williams Beuren Syndrome is a multisystemic disorder manifested by congenital heart defects associated with dysmorphic features, intellectual delay, and a particular behavioural profile due to a microdeletion in 7q11.2. Methods To establis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9c293816195e7d860f1a839aadd47cd
https://doi.org/10.21203/rs.3.rs-2139963/v1
https://doi.org/10.21203/rs.3.rs-2139963/v1
Publikováno v:
physica status solidi c. 12:80-83
Co-implantation, with overlapping implantation projected ranges, of Si and doping species (P, As, B) followed by a thermal annealing step is a viable route to form doped Si nanocrystals (NCs) embedded in SiO2. This presentation deals with optical cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a500a12e16ecb4fded246428f5ff105
https://doi.org/10.1002/pssc.201400079
https://doi.org/10.1002/pssc.201400079
Publikováno v:
physica status solidi c. 12:55-59
Our goal is to use the versatility of ion beam synthesis to grow nanocrystals of InxGa1-xAs alloys embedded in a silicon substrate. We study, first, the annealing conditions necessary to grow well defined InAs and GaAs binary nanocrystals. High dose
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cea4db1e9f83c44e54f09aa1384190ef
https://doi.org/10.1002/pssc.201400107
https://doi.org/10.1002/pssc.201400107
Autor:
Dominique Muller, Rim Khelifi, Raghav Gupta, Daniel Mathiot, Sébastien Duguay, Manuel Roussel
It is shown that co-implantation, with overlapping projected ranges of Si and P or As, followed by a single thermal annealing step is an efficient way to form doped Si nanocrystals (Si-nc's) embedded in SiO2 with diameters of a few nanometers. Atom p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cb293eb34ecd96359be203d558bfd675
https://hal.archives-ouvertes.fr/hal-00799830
https://hal.archives-ouvertes.fr/hal-00799830
Co-implantation, with overlapping implantation projected ranges, of Si and of the doping species (P, As, or B), followed by a single thermal anneal step, is proved to be a viable route to form doped Si-nc’s embedded in SiO2, with diameters of a few
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0132eb624e2b789dc718d98a2ed1e03d
https://hal.archives-ouvertes.fr/hal-00697568
https://hal.archives-ouvertes.fr/hal-00697568
Publikováno v:
Journal of Applied Physics. 116:143505
Co-implantation, with overlapping implantation projected ranges, of Si and doping species (P, As, and B) followed by a thermal annealing step is a viable route to form doped Si nanocrystals (NCs) embedded in silica (SiO2). In this paper, we investiga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad834c0133734251377536eb955851e4
https://doi.org/10.1063/1.4898038
https://doi.org/10.1063/1.4898038