Zobrazeno 1 - 10
of 48
pro vyhledávání: '"Riko, I Made"'
Autor:
Riko I Made, Jing Lin, Jintao Zhang, Yu Zhang, Lionel C.H. Moh, Zhaolin Liu, Ning Ding, Sing Yang Chiam, Edwin Khoo, Xuesong Yin, Guangyuan Wesley Zheng
Publikováno v:
iScience, Vol 27, Iss 4, Pp 109416- (2024)
Summary: Battery health assessment and recuperation play crucial roles in the utilization of second-life Li-ion batteries. However, due to ambiguous aging mechanisms, it is challenging to estimate battery health and devise an effective strategy for c
Externí odkaz:
https://doaj.org/article/dde6c07fa10c40e79eb82bb2ccc47e47
Autor:
Yuanyuan Guo, Yiming Zou, Chunyu Cheng, Leyan Wang, Riko I Made, Ronn Goei, Kwan Wee Tan, Shuzhou Li, Alfred Iing Yoong Tok
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-9 (2022)
Abstract Metal alloys are usually fabricated by melting constituent metals together or sintering metal alloy particles made by high energy ball milling (mechanical alloying). All these methods only allow for bulk alloys to be formed. This manuscript
Externí odkaz:
https://doaj.org/article/a5da5f6ddf6b4bec99563de686fcdac2
Publikováno v:
International Journal of Technology; Feb2024, Vol. 15 Issue 2, p364-372, 9p
Autor:
Chang Jie Leong, Kai Yuan Andre Low, Jose Recatala-Gomez, Pablo Quijano Velasco, Eleonore Vissol-Gaudin, Jin Da Tan, Balamurugan Ramalingam, Riko I Made, Shreyas Dinesh Pethe, Saumya Sebastian, Yee-Fun Lim, Zi Hui Jonathan Khoo, Yang Bai, Jayce Jian Wei Cheng, Kedar Hippalgaonkar
Progress in data-driven self-driving laboratories for solving materials grand challenges has accelerated with the advent of machine learning, robotics, and automation, but they are usually designed with specific materials and processes in mind. To de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a50c32598d051421e17566edcd29cc2
https://doi.org/10.26434/chemrxiv-2022-prrfh
https://doi.org/10.26434/chemrxiv-2022-prrfh
Autor:
David Kohen, Xuan Sang Nguyen, Sachin Yadav, Annie Kumar, Riko I Made, Christopher Heidelberger, Xiao Gong, Kwang Hong Lee, Kenneth Eng Kian Lee, Yee Chia Yeo, Soon Fatt Yoon, Eugene A. Fitzgerald
Publikováno v:
AIP Advances, Vol 6, Iss 8, Pp 085106-085106-6 (2016)
We report on the growth of an In0.30Ga0.70As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositiona
Externí odkaz:
https://doaj.org/article/a99111195ebf452eaf6f7a3a808d98a1
Autor:
Kwang Hong Lee, David Kohen, Kenneth Eng Kian Lee, Xuan Sang Nguyen, Christopher Heidelberger, Eugene A. Fitzgerald, Riko I Made
Publikováno v:
Journal of Crystal Growth. 478:64-70
Compositionally graded InAlAs buffers grown by metal–organic chemical vapor deposition are impaired by phase separation occurring at In content higher than 35%. Phase separation results in rough epilayers with poor crystalline material quality. By
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91885555e8e2d9ceb834d4ce9eb87fc3
https://doi.org/10.1016/j.jcrysgro.2017.08.025
https://doi.org/10.1016/j.jcrysgro.2017.08.025
Autor:
Sachin Yadav, Annie Kumar, Eugene A. Fitzgerald, David Kohen, Kwang Hong Lee, Soo Jin Chua, Kenneth Eng Kian Lee, Riko I Made, Xuan Sang Nguyen, Xiao Gong
Publikováno v:
IEEE Transactions on Semiconductor Manufacturing. 30:456-461
We report on the growth of In0.30Ga0.70As channel high electron mobility transistor (HEMT) epi-layers on a 200-mm Si substrate by metal-organic-chemical-vapor-deposition. The HEMT layers were grown on the Si substrate by using a ~3- ${\mu }\text{m}$
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::456cd3aec0807ba6969e30e555b31fd9
https://doi.org/10.1109/tsm.2017.2756684
https://doi.org/10.1109/tsm.2017.2756684
Autor:
Shuyu Bao, Kwang Hong Lee, Cong Wang, Bing Wang, Riko I. Made, Soon Fatt Yoon, Jurgen Michel, Eugene Fitzgerald, Chuan Seng Tan
Publikováno v:
Materials Science in Semiconductor Processing. 70:17-23
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::040e0c185ebdc2cbcf7d756fcf7a5cae
https://doi.org/10.1016/j.mssp.2017.07.012
https://doi.org/10.1016/j.mssp.2017.07.012
Publikováno v:
Microelectronics Reliability. :287-291
We have systematically studied the effects of SixN1 − x passivation density on the reliability of AlGaN/GaN high electron mobility transistors. Upon stressing, devices degrade in two stages, fast-mode degradation and followed by slow-mode degradati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e5f36a043e3ecb9c0e4c40628b8b6657
https://doi.org/10.1016/j.microrel.2017.06.057
https://doi.org/10.1016/j.microrel.2017.06.057
Autor:
Bing Wang, Chuan Seng Tan, Kwang Hong Lee, Riko I Made, Cong Wang, Jurgen Michel, Eugene A. Fitzgerald, Shuyu Bao, Soon Fatt Yoon
Publikováno v:
Materials Science in Semiconductor Processing. 58:15-21
In this work, we investigate the bonding processes to improve Germanium-on-insulator (GOI) quality for III–V integration, and an InGaP LED has been grown and characterized on this GOI substrate. The threading dislocation density (TDD) of GOI was re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97fc880c2fd1f39f6696ebdfe986c987
https://doi.org/10.1016/j.mssp.2016.11.001
https://doi.org/10.1016/j.mssp.2016.11.001