Zobrazeno 1 - 10
of 92
pro vyhledávání: '"Rikmantra Basu"'
Publikováno v:
IET Circuits, Devices and Systems, Vol 15, Iss 5, Pp 424-433 (2021)
Abstract The interface trap charges (ITC) associated reliability analysis of a charge‐plasma based asymmetric double‐gate (ADG) dopingless tunnel field effect transistor (DLTFET) with Si/Ge heterojunction and high‐κ gate dielectric (HJADGDLTFE
Externí odkaz:
https://doaj.org/article/beb5ae401c14460dad9e5b7eaa33783a
Publikováno v:
IEEE Photonics Journal, Vol 12, Iss 3, Pp 1-14 (2020)
We study the effect of temperature and doping in Si-based GeSn heterojunction phototransistors (HPTs) for low-power-consuming, low-cost, and high-speed mid-infrared (MIR) applications. The incorporation of Ge1-xSnx alloy in the base of our HPTs signi
Externí odkaz:
https://doaj.org/article/a2b515e1ce2e487dadeee61bb4f86a0b
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 7, Pp 118-126 (2019)
We present a comprehensive analysis of practical p-n-p Ge/Ge1-xSnx/Ge heterojunction phototransistors (HPTs) for design optimization for efficient infrared detection. Our design includes a Ge1-xSnx narrow-bandgap semiconductor as the active layer in
Externí odkaz:
https://doaj.org/article/77c81b5a4f7043c7aabd0759c059458d
Publikováno v:
IEEE Photonics Journal, Vol 4, Iss 5, Pp 1572-1581 (2012)
We have developed the expressions for terminal currents in transistor lasers (TLs) having a single quantum well (SQW) as well as multiple quantum wells (MQWs) of different well and barrier widths in the base by solving a continuity equation relating
Externí odkaz:
https://doaj.org/article/073d40bb20fa471ba94637a5ce4ec0d4
Publikováno v:
Silicon. 15:397-404
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e31526ffbc2e224196c7527638209dc1
https://doi.org/10.1007/s12633-022-02025-7
https://doi.org/10.1007/s12633-022-02025-7
Publikováno v:
Optical and Quantum Electronics. 55
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d8649f40e019eed70f44a31254076196
https://doi.org/10.1007/s11082-023-04720-0
https://doi.org/10.1007/s11082-023-04720-0
Publikováno v:
Journal of Russian Laser Research. 43:361-369
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8c80ed7704b0073f1d9672aab237e994
https://doi.org/10.1007/s10946-022-10060-3
https://doi.org/10.1007/s10946-022-10060-3
Publikováno v:
IEEE Transactions on Electron Devices. 69:2692-2697
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce8c89a3cc5fcb76152433c2be0b74ec
https://doi.org/10.1109/ted.2022.3156895
https://doi.org/10.1109/ted.2022.3156895
Autor:
Harshvardhan Kumar, Rikmantra Basu
Publikováno v:
IEEE Sensors Journal. 22:7743-7751
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5115a6c144731e0fe23e8658fd5ae2de
https://doi.org/10.1109/jsen.2022.3159833
https://doi.org/10.1109/jsen.2022.3159833
Publikováno v:
Silicon. 14:7701-7710
Tunnel FET (TFET) based upon charged-plasma (CP) concept have came out as a potential Metal-Oxide-Semiconductor-Field-Effect-Transistor (MOSFET) replacement as it provides immunization towards short channel effects (SCEs) and random dopant fluctuatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a71879181e78c2f4dec8b965a0d27041
https://doi.org/10.1007/s12633-021-01514-5
https://doi.org/10.1007/s12633-021-01514-5