Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Riki Ogawa"'
Autor:
Chosaku Noda, Hidekazu Takekoshi, Riki Ogawa, John G. Hartley, Tadayuki Sugimori, Nobutaka Kikuiri, Koichi Ishii, David J. Pinckney, Ando Atsushi
Publikováno v:
Photomask Technology 2021.
TN5nm HVM where EUVL was implemented on started in the middle of 2020, but EUV mask pattern inspection is still not ready in terms of fully satisfying customers' requirements. There are three tool candidates; optical, actinic, and e-beam inspection.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d94d0edd3288a29be1d76f20485e571
https://doi.org/10.1117/12.2600987
https://doi.org/10.1117/12.2600987
Autor:
Takashi Hirano, Hideo Tsuchiya, Riki Ogawa, Nobutaka Kikuiri, Ikunao Isomura, Hiromu Inoue, Ryoji Yoshikawa
Publikováno v:
SPIE Proceedings.
Mask inspection tool with DUV laser source has been used for Photo-mask production in many years due to its high sensitivity, high throughput, and good CoO. Due to the advance of NGL technology such as EUVL and Nano-imprint lithography (NIL), there i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7ce76c7ac8ab2bfe05e4809ef841de8
https://doi.org/10.1117/12.2197890
https://doi.org/10.1117/12.2197890
Autor:
Kenichi Takahara, Ikunao Isomura, Manabu Isobe, Hideaki Hashimoto, Riki Ogawa, Hideo Tsuchiya, Nobutaka Kikuiri, Eiji Matsumoto
Publikováno v:
SPIE Proceedings.
Various technologies such as multiple patterning (MP) are being developed to extend the current DUV optical lithography to deal with the delay of next generation lithography such as EUV and NIL. Likewise, it is necessary to continue to develop techno
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d6e76438c9a1a4105dba36bb48d1079d
https://doi.org/10.1117/12.2029363
https://doi.org/10.1117/12.2029363
Autor:
Ryoichi Hirano, Kenichi Takahara, Hideaki Hashimoto, Riki Ogawa, Masatoshi Hirono, Hiroyuki Sigemura, Nobutaka Kikuiri
Publikováno v:
SPIE Proceedings.
Lithography potential expands for 45nm node to 32nm device production by the development of immersion technology and the introduction of phase shift mask. We have already developed the mask inspection system using 199nm wavelength with simultaneous t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9c64ca750830a884d276818237f6560
https://doi.org/10.1117/12.848679
https://doi.org/10.1117/12.848679
Autor:
Masatoshi Hirono, Ryoichi Hirano, Riki Ogawa, Nobutaka Kikuiri, Kenichi Takahara, Hiroyuki Shigemura, Hideaki Hashimoto
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXIII.
The lithography potential of an ArF (193nm) laser exposure tool with high numerical aperture (NA) will expand its lithography potential to 45nm node production and even beyond. Consequently, a mask inspection system with a wavelength nearly equal to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1982dabfd611b8dd841d53ccafbaac8a
https://doi.org/10.1117/12.814466
https://doi.org/10.1117/12.814466
Autor:
Yoshinori Honguh, Masataka Shiratsuchi, Riki Ogawa, Takehiko Nomura, Masatoshi Hirono, Ryoichi Hirano
Publikováno v:
SPIE Proceedings.
Recently, technologies of ArF laser exposure tools and alternating phase shifting masks (Alt-PSM) are expected to be used in actual production. To utilize such newly developed technologies, it is inevitable to develop a mask inspection technology to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c625c37f2a75eed32f57be6a2d448c8b
https://doi.org/10.1117/12.747909
https://doi.org/10.1117/12.747909
Publikováno v:
SPIE Proceedings.
Recently, technologies of ArF laser exposure tools and alternating phase shifting masks (Alt-PSM) are expected to be used in actual production. To utilize such newly developed technologies, it is inevitable to develop a mask inspection technology to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73cfb820579af8fb394c09ab4719e4f4
https://doi.org/10.1117/12.729002
https://doi.org/10.1117/12.729002
Autor:
Ryoichi Hirano, Kinya Usuda, Riki Ogawa, Nobutaka Kikuiri, Kenichi Takahara, Yoshitake Tsuji, Shingo Murakami, Hitoshi Suzuki
Publikováno v:
SPIE Proceedings.
The lithography potential of an ArF (193nm) laser exposure tool with high numerical aperture (NA) will expand its lithography potential to 65nm node production and even beyond. Consequently, a mask inspection system with a light source, whose wavelen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::995ea52fd0a79a11c6bcd681d782174a
https://doi.org/10.1117/12.712774
https://doi.org/10.1117/12.712774
Autor:
Noboru Kobayashi, Ryoich Hirano, Nobuyuki Yoshioka, Takeshi Nishizaka, Katsumi Ohira, Makoto Taya, Toru Tojo, Akemi Miwa, Junji Oaki, Yasushi Sanada, Riki Ogawa, Dong-Hoon Chung, Shinji Sugihara, Hideo Tsuchiya, Akihiko Sekine, Hiromu Inoue, Masao Otaki, Ikunao Isomura, Kazuto Matsuki, Hitoshi Suzuki, Kazuhiro Nakashima, Shinichi Imai
Publikováno v:
SPIE Proceedings.
A novel high-resolution mask inspection platform using DUV wavelength has been developed. This platform is designed to enable the defect inspection of high quality masks for 65nm node used in 193nm lithography. In this paper, newly developed optical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4368d58ab830403f81b3b54041094432
https://doi.org/10.1117/12.579133
https://doi.org/10.1117/12.579133
Autor:
Ryoji Yoshikawa, Satoshi Endo, Yoichiro Takahashi, Hiromu Inoue, Hiroyuki Tanizaki, Masami Ikeda, Tomohide Watanabe, Riki Ogawa, Hidehiro Watanabe
Publikováno v:
SPIE Proceedings.
We have developed a new photomask inspection method which has capability for inspecting 65nm technology node reticles using 257nm wavelength light source. This new method meets the requirement for the current mask inspection system using KrF inspecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::668feb65b3af01c261ebb79982f791a5
https://doi.org/10.1117/12.557725
https://doi.org/10.1117/12.557725