Zobrazeno 1 - 10
of 158
pro vyhledávání: '"Rik Jonckheere"'
Autor:
Joost Bekaert, Emily Gallagher, Marina Y. Timmermans, Ivan Pollentier, Rik Jonckheere, Remko Aubert, Eric Hendrickx
Publikováno v:
Optical and EUV Nanolithography XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0529e8ead5034dd0312d413f92d6661
https://doi.org/10.1117/12.2660595
https://doi.org/10.1117/12.2660595
Autor:
Rik Jonckheere, Lawrence Melvin
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2022.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8f30a29f18d443a2ff9da2457abb42c
https://doi.org/10.1117/12.2643247
https://doi.org/10.1117/12.2643247
Autor:
Lawrence S. Melvin, Rik Jonckheere
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 21
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6d2a0c5c2af4526ca01cc296b28ab87
https://doi.org/10.1117/1.jmm.21.4.044401
https://doi.org/10.1117/1.jmm.21.4.044401
Autor:
Lawrence S. Melvin, Rik Jonckheere
Publikováno v:
International Conference on Extreme Ultraviolet Lithography 2021.
This paper extends the 2019 and 2020 symposium contributions clearly showing that (local) mask defects and non-local mask defects (NLMDs) act as triggers for increased stochastic failure probability on the EUV printed wafer. The present work focuses
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5aa3d8cc7ced770c5c67f45119fa66a1
https://doi.org/10.1117/12.2601897
https://doi.org/10.1117/12.2601897
Autor:
Lieve Van Look, Ivan Pollentier, Joost Bekaert, Alexander Klein, Remko Aubert, Emily Gallagher, Marina Y. Timmermans, Rik Jonckheere, Par Broman, Eric Hendrickx, Vineet Vijayakrishnan Nair, Gokay Yeğen
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 20
Extreme ultraviolet (EUV) lithography was recently implemented in high-volume wafer production. Consequently, maximizing yield is gaining importance. One key component to achieving optimal yield is using a pellicle to hold particles out of the focal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a082103eee38675855d7842dcb1ad888
https://doi.org/10.1117/1.jmm.20.2.021005
https://doi.org/10.1117/1.jmm.20.2.021005
Autor:
Rik Jonckheere, Lawrence S. Melvin
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 20
Two earlier publications showed that mask defectivity contributes to the stochastics of the EUVL-printed image on wafer. The present contribution gives more insights into the methodology and resist models used therein. In addition, an extended study
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ceac3479f9d2f921c1a670dee5ac3aa
https://doi.org/10.1117/1.jmm.20.2.021003
https://doi.org/10.1117/1.jmm.20.2.021003
Publikováno v:
Extreme Ultraviolet (EUV) Lithography XII.
An Extreme Ultra-Violet (EUV) photo mask is a complex engineering marvel. It is integral to semiconductor manufacturing, as it holds the design layout information intended for the device. The mask complexity allows many potential points of variation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::230cde8789c79c42f9d7d470f6fa9a6f
https://doi.org/10.1117/12.2584775
https://doi.org/10.1117/12.2584775
Autor:
Lawrence S. Melvin, Rik Jonckheere
Publikováno v:
Extreme Ultraviolet Lithography 2020.
This paper extends the 2019 findings, that local defects on an EUV mask are trigger points for stochastic failures on the printed wafer, to a simulation study of non-local mask deficiencies. These relate to shortcomings of a larger area nature where
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05056563e2f57074eb91f9adc1bc2944
https://doi.org/10.1117/12.2572998
https://doi.org/10.1117/12.2572998
Autor:
Rik Jonckheere, Henk A. Lensen, Chien-Ching Wu, Frank Scholze, Claudia Zech, Remko Aubert, Veronique de Rooij-Lohmann, Michael Kolbe, Philipp Hönicke, Vineet Vijayakrishnan Nair, Victor Soltwisch, Dorus Elstgeest, Eric Hendrickx
Publikováno v:
Extreme Ultraviolet Lithography 2020
A parallelism is reported between reticle lifetime experiments undertaken on TNO’s EBL2 platform and wafer printing on the ASML NXE EUV scanner installed at imec. EBL2 mimics reticle impact due to exposure of ten thousand wafers in NXE representati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c97df97729643d28231815db1996c329
https://doi.org/10.1117/12.2573125
https://doi.org/10.1117/12.2573125
Autor:
Rik Jonckheere
Publikováno v:
Advanced Optical Technologies. 6:203-220
This article covers the various aspects of defectivity of a typical mask used for extreme ultra-violet (EUV) lithography. The focus of the present article is on those aspects that are more specific for EUV lithography. A prime type of defect that ful
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3506275afda50bf0e6b80ccd75018d70
https://doi.org/10.1515/aot-2017-0017
https://doi.org/10.1515/aot-2017-0017