Zobrazeno 1 - 10
of 710
pro vyhledávání: '"Rijnders G"'
Autor:
Green, R. J., Zabolotnyy, V., Zwiebler, M., Liao, Z., Macke, S., Sutarto, R., He, F., Huijben, M., Rijnders, G., Koster, G., Geck, J., Hinkov, V., Sawatzky, G. A.
The interface between the insulators LaAlO$_3$ and SrTiO$_3$ accommodates a two-dimensional electron liquid (2DEL) -- a high mobility electron system exhibiting superconductivity as well as indications of magnetism and correlations. While this flagsh
Externí odkaz:
http://arxiv.org/abs/2106.12061
Publikováno v:
In Ceramics International October 2024
The properties of a ferroelectric, (001)-oriented, thin film clamped to a substrate are investigated analytically and numerically. The emphasis is on the tetragonal, polydomain, ferroelectric phase, using a three domain structure, as is observed expe
Externí odkaz:
http://arxiv.org/abs/1901.10883
Autor:
Le, Phu Tran Phong, Hofhuis, Kevin, Rana, Abhi, Huijben, Mark, Hilgenkamp, Hans, Rijnders, G., Elshof, A. ten, Koster, Gertjan, Gauquelin, Nicolas, Lumbeeck, Gunnar, Schlüßler-Langeheine, Christian, Popescu, Horia, Fortuna, F., Smit, Steef, Verbeek, Xanthe H., Araizi-Kanoutas, Georgios, Mishra, Shrawan, Vakivskyi, Igor, Durr, Hermann A., Golden, Mark S.
VO2 is a much-discussed material for oxide electronics and neuromorphic computing applications. Here, heteroepitaxy of vanadium dioxide (VO2) was realized on top of oxide nanosheets that cover either the amorphous silicon dioxide surfaces of Si subst
Externí odkaz:
http://arxiv.org/abs/1901.08823
Publikováno v:
Review of Scientific Instruments 88, 123902 (2017)
To visualize the topography of thin oxide films during growth, thereby enabling to study its growth behavior quasi real-time, we have designed and integrated an atomic force microscope (AFM) in a pulsed laser deposition (PLD) vacuum setup. The AFM sc
Externí odkaz:
http://arxiv.org/abs/1712.02988
Autor:
Thomas, S., Kuiper, B., Hu, J., Smit, J., Liao, Z., Zhong, Z., Rijnders, G., Vailionis, A., Wu, R., Koster, G., Xia, J.
Publikováno v:
Phys. Rev. Lett., 119, 177203 (2017)
With reduced dimensionality, it is often easier to modify the properties of ultra-thin films than their bulk counterparts. Strain engineering, usually achieved by choosing appropriate substrates, has been proven effective in controlling the propertie
Externí odkaz:
http://arxiv.org/abs/1710.00729
Autor:
Chen, Y. Z., Trier, F., Wijnands, T., Green, R. J., Gauquelin, N., Egoavil, R., Christensen, D. V., Koster, G., Huijben, M., Bovet, N., Macke, S., He, F., Sutarto, R., Andersen, N. H., Prawiroatmodjo, G. E. D. K., Jespersen, T. S., Sulpizio, J. A., Honig, M., Linderoth, S., Ilani, S., Verbeeck, J., Van Tendeloo, G., Rijnders, G., Sawatzky, G. A., Pryds, N.
The discovery of two-dimensional electron gases (2DEGs) at the interface between two insulating complex oxides, such as LaAlO3 (LAO) or gamma-Al2O3 (GAO) epitaxially grown on SrTiO3 (STO) 1,2, provides an opportunity for developing all-oxide electron
Externí odkaz:
http://arxiv.org/abs/1504.05986
Publikováno v:
Journal of Applied Physics; 4/14/2023, Vol. 133 Issue 14, p1-6, 6p
Autor:
Kleibeuker, J. E., Zhong, Z., Nishikawa, H., Gabel, J., Müller, A., Pfaff, F., Sing, M., Held, K., Claessen, R., Koster, G., Rijnders, G.
Publikováno v:
Phys. Rev. Lett. 113, 237402 (2014)
We report the formation of a non-magnetic band insulator at the isopolar interface between the antiferromagnetic Mott-Hubbard insulator LaTiO3 and the antiferromagnetic charge transfer insulator LaFeO3. By density functional theory calculations, we f
Externí odkaz:
http://arxiv.org/abs/1411.1218
Autor:
Gray, A. X., Minár, J., Plucinski, L., Huijben, M., Bostwick, A., Rotenberg, E., Yang, S. -H., Braun, J., Winkelmann, A., Conti, G., Eiteneer, D., Rattanachata, A., Greer, A. A., Ciston, J., Ophus, C., Rijnders, G., Blank, D. H. A., Doennig, D., Pentcheva, R., Schneider, C. M., Ebert, H., Fadley, C. S.
Angle-resolved photoemission spectroscopy (ARPES) is a powerful technique for the study of electronic structure, but it lacks a direct ability to study buried interfaces between two materials. We address this limitation by combining ARPES with soft x
Externí odkaz:
http://arxiv.org/abs/1309.2022