Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Rihab Sellami"'
Publikováno v:
The European Physical Journal B. 95
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb7509a6777c8e0899fb7b9728098c17
https://doi.org/10.1140/epjb/s10051-022-00357-2
https://doi.org/10.1140/epjb/s10051-022-00357-2
Publikováno v:
Optical and Quantum Electronics. 53
We present a theoretical study of linear and nonlinear optical properties of carriers in types I and II GaAs /AlxGa1−xAs quantum rings (QRs). We are interested in the effects of incident optical intensity, Al concentration in the barrier and rim he
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09ed670381233843b2df679834419dda
https://doi.org/10.1007/s11082-021-02863-6
https://doi.org/10.1007/s11082-021-02863-6
Publikováno v:
Optical and Quantum Electronics. 52
Linear and nonlinear optical properties of GaSb quantum ring inside AlxGa1−xAs/GaAs/AlxGa1−xAs quantum well (QW) and AlAs/GaAs/InGaAs/AlAs double QW have been theoretically investigated. The effects of the Al concentration in the barrier, the wid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbfd27a512b00642ae0816f94f18ef5d
https://doi.org/10.1007/s11082-020-02435-0
https://doi.org/10.1007/s11082-020-02435-0
Ми теоретично вивчали еволюційні екситонні властивості квантового кільця GaSb, розташованого всередині подвійної квантової ями AlAs/GaAs/InGaA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b1e09e575a4ac5a2cee65ba4b7cd7805
https://essuir.sumdu.edu.ua/handle/123456789/81124
https://essuir.sumdu.edu.ua/handle/123456789/81124
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 126:114476
We present a study of the electronic and optical properties of carriers in GaAs/AlxGa1-xAs quantum ring (QR) as a function of the aluminum concentration (x) in the barrier and the ring height (hM). We calculated the wavefunctions and the energies of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c2c359df0af9d89e90ec403f1dc23ac
https://doi.org/10.1016/j.physe.2020.114476
https://doi.org/10.1016/j.physe.2020.114476
Autor:
Abdelmajid Salhi, A. Melliti, Afef Ben Mansour, Rihab Sellami, Mohamed Souhail Kehili, Radhouane Chtourou
Publikováno v:
Journal of Luminescence. 225:117368
In this study, the optical properties of InAs quantum dots (QDs) were characterized using photoluminescence (PL) measurements. The QDs, capped with GaAs and GaAs1−xSbx (x = 6%) strain-reducing layer (SRL), were grown by Molecular Beam Epitaxy. Temp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0670fb5717a122fb4e06826ba5c465ac
https://doi.org/10.1016/j.jlumin.2020.117368
https://doi.org/10.1016/j.jlumin.2020.117368
Publikováno v:
Semiconductor Science and Technology. 33:115019
We present a study of the electronic and optical properties of charge carriers in a GaSb quantum ring inside a GaAs/Al0.6Ga0.4As quantum well as a function of the well width. After calculating the strain field using the continuum elasticity model, we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce1e831d0b117384573b94df9afaa50d
https://doi.org/10.1088/1361-6641/aae3b3
https://doi.org/10.1088/1361-6641/aae3b3
Publikováno v:
Semiconductor Science & Technology; Nov2018, Vol. 33 Issue 11, p1-1, 1p
Autor:
Kehili, Mohamed Souhail1,2 (AUTHOR), Sellami, Rihab1,2 (AUTHOR), Ben Mansour, Afef1,2 (AUTHOR), Melliti, Adnen1,2 (AUTHOR) adnenmelliti@yahoo.fr
Publikováno v:
Optical & Quantum Electronics. Jun2020, Vol. 52 Issue 6, p1-12. 12p.
Publikováno v:
Journal of Nano- & Electronic Physics; 2020, Vol. 12 Issue 6, p06002-1-06002-5, 5p