Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Rifat Ferdous"'
Autor:
Ali Khakifirooz, Eduardo Anaya, Sriram Balasubrahrmanyam, Geoff Bennett, Daniel Castro, John Egler, Kuangchan Fan, Rifat Ferdous, Kartik Ganapathi, Omar Guzman, Chang Wan Ha, Rezaul Haque, Vinaya Harish, Majid Jalalifar, Owen W. Jungroth, Sung-Taeg Kang, Golnaz Karbasian, Jee-Yeon Kim, Siyue Li, Aliasgar S. Madraswala, Srivijay Maddukuri, Amr Mohammed, Shanmathi Mookiah, Shashi Nagabhushan, Binh Ngo, Deep Patel, Sai Kumar Poosarla, Naveen V. Prabhu, Carlos Quiroga, Shantanu Rajwade, Ahsanur Rahman, Jalpa Shah, Rohit S. Shenoy, Ebenezer Tachie Menson, Archana Tankasala, Sandeep Krishna Thirumala, Sagar Upadhyay, Krishnasree Upadhyayula, Ashley Velasco, Nanda Kishore Babu Vemula, Bhaskar Venkataramaiah, Jiantao Zhou, Bharat M. Pathak, Pranav Kalavade
Publikováno v:
2023 IEEE International Solid- State Circuits Conference (ISSCC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::177753a2ce8bb9f42c2ea9a8a3d32f41
https://doi.org/10.1109/isscc42615.2023.10067616
https://doi.org/10.1109/isscc42615.2023.10067616
Autor:
Gerhard Klimeck, C. H. Yang, J. C. C. Hwang, Harshad Sahasrabudhe, Kok Wai Chan, Menno Veldhorst, Andrew S. Dzurak, Andrea Morello, Rifat Ferdous, Rajib Rahman
Publikováno v:
Physical Review B, 97(24)
We identify the presence of monoatomic steps at the Si/SiGe or Si/SiO$_2$ interface as a dominant source of variations in the dephasing time of Si quantum dot (QD) spin qubits. First, using atomistc tight-binding calculations we show that the g-facto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f4e140a3abc3e82269a059059b1746d
https://doi.org/10.1103/physrevb.97.241401
https://doi.org/10.1103/physrevb.97.241401
Autor:
M. G. Lagally, Rajib Rahman, Mark A. Eriksson, Susan Coppersmith, Daniel R. Ward, Rifat Ferdous, Lieven M. K. Vandersypen, Michał P. Nowak, Donald E. Savage, Mark Friesen, Erika Kawakami, Pasquale Scarlino
Publikováno v:
npj Quantum Information, Vol 4, Iss 1, Pp 1-8 (2018)
Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent experimen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3af465a48a68e8dfec238df4c2cf3282
https://infoscience.epfl.ch/record/284008
https://infoscience.epfl.ch/record/284008
