Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Rico Hentschel"'
Autor:
Victor Sizov, Rico Hentschel, Andre Wachowiak, Thomas Mikolajick, Anthony Calzolaro, Ifeanyi Francis Edokam
Publikováno v:
Semiconductor Science and Technology. 35:075011
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cad55a68e2e57f305d6f1d4968c6dc42
https://doi.org/10.1088/1361-6641/ab8755
https://doi.org/10.1088/1361-6641/ab8755
Autor:
A. Jahn, Annett Winzer, M. Schuster, U. Merkel, Rico Hentschel, Thomas Mikolajick, J. Ocker, Andre Wachowiak
Publikováno v:
physica status solidi (a). 213:1246-1251
We report on the investigation of the Vth drift behaviour of AlGaN/GaN MISHEMTs upon forward gate voltage stress in dependence of stress bias and stress time. The pulsed measurements allow for the evaluation of the operational regime for optimum devi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d21429af000cf549b0b74b44fa4caaa
https://doi.org/10.1002/pssa.201532756
https://doi.org/10.1002/pssa.201532756
Autor:
Robin Nigon, Uwe Schroeder, Everett D. Grimley, Violetta Sessi, Rico Hentschel, Paul Muralt, James M. LeBeau, Xiahan Sang, Franz P. G. Fengler, Thomas Mikolajick
The discovery of the ferroelectric orthorhombic phase in doped hafnia films has sparked immense research efforts. Presently, a major obstacle for hafnia's use in high-endurance memory applications like nonvolatile random-access memories is its unstab
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::745b6d4387e940afd65873a85d7d6266
https://tud.qucosa.de/id/qucosa:80496
https://tud.qucosa.de/id/qucosa:80496
In this report, the operation of a normally-off vertical gallium nitride (GaN) metal-oxide field effect transistor with a threshold voltage of 5 V is demonstrated. A crucial step during device fabrication is the formation of the highly n-doped source
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::aedcd8b729b6adda17555cb5c607d948
https://tud.qucosa.de/id/qucosa:81088
https://tud.qucosa.de/id/qucosa:81088
Autor:
Andreas Großer, S. Schmult, Tobias Scheinert, Steffen Wirth, Rico Hentschel, Thomas Mikolajick, I. V. Kukushkin, Andre Wachowiak, Victor V. Solovyev
Publikováno v:
physica status solidi (a). 217:1900732
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4453813f93a4b869e7c550db761fd299
https://doi.org/10.1002/pssa.201900732
https://doi.org/10.1002/pssa.201900732
Autor:
A. Jahn, Rico Hentschel, Andreas Großer, Holger Kalisch, Ada Wille, S. Schmult, Andre Wachowiak, Thomas Mikolajick, Andrei Vescan, U. Merkel
Publikováno v:
2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM).
We report on the fabrication and characterisation of an enhancement mode n-channel pseudo-vertical GaN metal oxide semiconductor field effect transistor (MOSFET), which utilizes a high-k dielectric covered trench gate and a top side drain contact. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8fb72a99a1d2b354c0b8028e801e6e0
https://doi.org/10.1109/asdam.2016.7805882
https://doi.org/10.1109/asdam.2016.7805882
Autor:
Alexander Schmid, Thomas Mikolajick, J. Ocker, Andre Wachowiak, Annett Winzer, Rico Hentschel, Jan Gärtner, N. Szabó
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:01A102
Metal–insulator–semiconductor (MIS) capacitor structures were fabricated on AlGaN/GaN two-dimensional electron gas heterostructure material in order to investigate important aspects of the gate module of a corresponding MIS-high electron mobility
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e03a0df5c2f1a2714d15425debef133d
https://doi.org/10.1116/1.4967307
https://doi.org/10.1116/1.4967307
Autor:
F. Schubert, Rico Hentschel, N. Szabó, J. Ocker, Jan Gärtner, Annett Winzer, M. Schuster, Andre Wachowiak, Thomas Mikolajick
Publikováno v:
Journal of Applied Physics. 118:124106
In this work, we present the terrace etching technique to obtain excessive thickness series of atomic layer deposition (ALD) grown Al2O3 and HfO2 on GaN-cap/AlGaN/GaN heterostructures allowing for the detailed study of oxide charge distribution and i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99d7c609f026110824ce123e816d1076
https://doi.org/10.1063/1.4931884
https://doi.org/10.1063/1.4931884