Lateral Enlargement Growth Mechanism of 3C-SiC on Off-Oriented 4H-SiC Substrates

Autor: Ivan Gueorguiev Ivanov, Rickard Liljedahl, Rositsa Yakimova, G. Reza Yazdi, Valdas Jokubavicius, Mikael Syväjärvi

Publikováno v: Crystal Growth & Design. 14:6514-6520

We introduce a 3C-SiC growth concept on off-oriented 4H-SiC substrates using a sublimation epitaxial method. A growth model of 3C-SiC layer development via a controlled cubic polytype nucleation on in situ formed on-axis area followed by a lateral en

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1c0181584e95466911a800bd6fdbf43f
https://doi.org/10.1021/cg501424e

Morphological and Optical Stability in Growth of Fluorescent SiC on Low Off-Axis Substrates

Autor: Mikael Syväjärvi, Peter J. Wellmann, Philip Hens, Valdas Jokubavicius, Rickard Liljedahl, Rositza Yakimova, Michl Kaiser

Publikováno v: Materials Science Forum. :19-22

Fluorescent silicon carbide was grown using the fast sublimation growth process on low off-axis 6H-SiC substrates. In this case, the morphology of the epilayer and the incorporation of dopants are influenced by the Si/C ratio. Differently converted t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ce5b9cda6028a6ffa88cb70268e245d6
https://doi.org/10.4028/www.scientific.net/msf.740-742.19

Step-Flow Growth of Fluorescent 4H-SiC Layers on 4 Degree Off-Axis Substrates

Autor: Saskia Schimmel, Mikael Syväjärvi, Haiyan Ou, Margareta K. Linnarsson, Philip Hens, Peter J. Wellmann, Yiyu Ou, Rickard Liljedahl, Valdas Jakubavicius, Michl Kaiser, Rositza Yakimova, Jianwu Sun

Publikováno v: Schimmel, S, Kaiser, M, Hens, P, Jokubavicus, V, Liljedahl, R, Sun, J W, Yakimova, R, Ou, Y, Ou, H, Linnarsson, M K, Wellmann, P & Syväjärvi, M 2012, ' Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates ', European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), Saint-Petersburg, Russian Federation, 02/09/2012-06/09/2012 .
Technical University of Denmark Orbit

Homoepitaxial layers of fluorescent 4H-SiC were grown on 4 degree off-axis substrates by sublimation epitaxy. Luminescence in the green spectral range was obtained by co-doping with nitrogen and boron utilizing donor-acceptor pair luminescence. This

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3b2fda5f9dc09f5a9fbd6d4a11bc3d73
https://doi.org/10.4028/www.scientific.net/msf.740-742.185

Towards Bulk-Like 3C-SiC Growth Using Low Off-Axis Substrates

Autor: Valdas Jokubavicius, Saskia Schimmel, Rickard Liljedahl, Mikael Syväjärvi, Ho Hsuan Huang, Rositza Yakimova

Publikováno v: Materials Science Forum. :275-278

Bulk-like 3C-SiC was grown on 1.2 degrees low off-axis 6H-SiC substrates using a sublimation epitaxy technique. The effects of temperature ramp-up and increase in layer thickness on the 3C-SiC domain formation were explored. The temperature ramp-up h

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::88749a44cbc4557d867cdebf8c31bb1a
https://doi.org/10.4028/www.scientific.net/msf.740-742.275

On Stabilization of 3C-SiC Using Low Off-Axis 6H-SiC Substrates

Autor: Rickard Liljedahl, Philip Hens, Valdas Jokubavicius, Rositza Yakimova, Bjorn Lundqvist, Mikael Syväjärvi, Satoshi Kamiyama

Publikováno v: Materials Science Forum. :193-196

Heteroepitaxial growth of 3C-SiC on 0.8 and 1.2 degree off-oriented 6H-SiC substrates was studied using a sublimation growth process. The 3C-SiC layers were grown at high growth rates with layer thickness up to 300 µm. The formation and the quality

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6a74371b1295c96a717cf2317fc832bc
https://doi.org/10.4028/www.scientific.net/msf.717-720.193