Zobrazeno 1 - 10
of 159
pro vyhledávání: '"Rick Phelps"'
Autor:
Venkata Narayana Rao Vanukuru, Steven M. Shank, Anthony K. Stamper, Balaji Swaminathan, Aaron L. Vallett, Alvin J. Joseph, Rick Phelps, John J. Ellis-Monaghan, Adusumilli Siva P, Mark D. Jaffe, Ananth Sundaram, Michel J. Abou-Khalil, Randy L. Wolf
Publikováno v:
2018 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
Integration of high performance switch with Low Noise Amplifier (LNA) devices results in state of the art performance for 5G Front End Module applications. Here we review switch+ LNA performance metrics and its evolution over the last 10 years and hi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::860583922fa3636996b47a40adbb3240
https://doi.org/10.1109/s3s.2018.8640205
https://doi.org/10.1109/s3s.2018.8640205
Autor:
Mark D. Jaffe, Alan B. Botula, Randy L. Wolf, Steven Moss, James A. Slinkman, Michel J. Abou-Khalil, John J. Ellis-Monaghan, Alvin J. Joseph, Rick Phelps
Publikováno v:
2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC).
In this study, we define and investigate the maximum power handling capability (Pmax) in an SOI RF shunt branch switch. One of the critical factor in the Pmax is the non-uniform voltage division across an OFF shunt branch. In this study we provide a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d8c0ae730b765fda8e05bebec647385
https://doi.org/10.1109/rfic.2013.6569611
https://doi.org/10.1109/rfic.2013.6569611
Publikováno v:
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
In this paper, we discuss the fundamental design tradeoff among specific on-resistance (Ron, sp), gate charge (Cgg), quasi-saturation, and reliability characteristics for an integrated high voltage LDMOS. A novel patterned gate design is proposed and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5d63a856c21cbdab2f4eff22882bb93
https://doi.org/10.1109/ispsd.2013.6694446
https://doi.org/10.1109/ispsd.2013.6694446
Autor:
Rick Phelps, Theodode Letavic, Natalie B. Feilchenfeld, Donald J. Cook, Michael J. Zierak, Santosh Sharma, Yun Shi
Publikováno v:
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
This paper presents complimentary 85V-rated LDMOS devices integrated in a 180nm power management technology platform. The devices are fabricated using a design technique which utilizes tapered dielectric regions in combination with patterned floating
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4de0de10eba9b1521b7501d9f36fd0d8
https://doi.org/10.1109/ispsd.2013.6694423
https://doi.org/10.1109/ispsd.2013.6694423
Autor:
John J. Ellis-Monaghan, Natalie B. Feilchenfeld, James S. Dunn, Yun Shi, Rick Phelps, Ted Letavic, Donald J. Cook, Crystal M. Hedges, Santosh Sharma
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
A novel JFET redesign of a laterally scaled P-LDMOS device is presented. The P-LDMOS device has excellent Rsp as it is scaled from 90V to 170V operation. This P-LDMOS design is modified to produce a 100V PJFET with good turn-off characteristics and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::03861133e67c3e00aac7c5234ba56c88
https://doi.org/10.1109/ispsd.2012.6229040
https://doi.org/10.1109/ispsd.2012.6229040
Autor:
Rick Phelps, Donald J. Cook, Helmut Nauschnig, Santosh Sharma, Georg Roerher, Alain Loiseau, Rainer Minixhofer, Theodore J. Letavic, Yun Shi, John-Ellis Monaghan, James S. Dunn, Natalie B. Feilchenfeld, Christopher Lamothe
Publikováno v:
2012 24th International Symposium on Power Semiconductor Devices and ICs.
This paper presents a 20V-rated planar dual gate oxide NLDMOS power device structure fabricated in a 180nm power management technology. The performance of the planar dual gate device structure is compared to a conventional STI-based device and it is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf0e20dcf055204e8d650f75d8097771
https://doi.org/10.1109/ispsd.2012.6229107
https://doi.org/10.1109/ispsd.2012.6229107
Publikováno v:
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
In this paper, we discuss the scalable NLDMOS design in a 0.18μm HV-CMOS technology. The design impacts in quasi-saturation are compared between the 25V and 50V NLDMOS to demonstrate the implications in output and f T characteristics. The STI depth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a254f37e54661a5fc5a2f6272adadfeb
https://doi.org/10.1109/ispsd.2011.5890829
https://doi.org/10.1109/ispsd.2011.5890829
Autor:
Beard, Elizabeth
Publikováno v:
Parks & Recreation. Aug2011, Vol. 46 Issue 8, p15-17. 3p. 2 Color Photographs.
Publikováno v:
Masonry; Sep2013, Vol. 52 Issue 9, p39-40, 2p