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Publikováno v:
2019 IEEE 26th International Symposium on Physical and Failure Analysis of Integrated Circuits (IPFA).
As the analysis of SRAM Memory Built In Self Test (MBIST), some failure modes such as single bit (SB) or dual bit (DB) failure can be localized accurately. The inspection area of SRAM SB/DB is around 1~2um2. Traditionally, we can use the Focus Ion Be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39d71b999b4449a819cafa6bb1cc9e76
https://doi.org/10.1109/ipfa47161.2019.8984867
https://doi.org/10.1109/ipfa47161.2019.8984867
