Zobrazeno 1 - 10
of 477
pro vyhledávání: '"Richter Curt A."'
Autor:
Rienstra, Robert W., Sultana, Nishat, Shih, En-Min, Stocker, Evan, Watanabe, Kenji, Taniguchi, Takashi, Richter, Curt A., Stroscio, Joseph, Zhitenev, Nikolai, Ghahari, Fereshte
Here we report on low temperature transport measurements of encapsulated bilayer graphene nano constrictions fabricated employing electrode-free AFM-based local anodic oxidation (LAO) nanolithography. This technique allows for the creation of constri
Externí odkaz:
http://arxiv.org/abs/2412.08758
Autor:
Schwartz Jeffrey J., Le Son T., Krylyuk Sergiy, Richter Curt A., Davydov Albert V., Centrone Andrea
Publikováno v:
Nanophotonics, Vol 10, Iss 5, Pp 1517-1527 (2021)
Hyperbolic phonon polaritons (HPhPs) are hybrid excitations of light and coherent lattice vibrations that exist in strongly optically anisotropic media, including two-dimensional materials (e.g., MoO3). These polaritons propagate through the material
Externí odkaz:
https://doaj.org/article/b9beae7f582d465faf1ee83d0597f760
Autor:
Le, Son T., Mai, Thuc T., Munoz, Maria F., Walker, Angela R. Hight, Richter, Curt A., Hanbicki, Aubrey T., Friedman, Adam L.
Doped semiconductors are a central and crucial component of all integrated circuits. By using a combination of white light and a focused laser beam, and exploiting hBN defect states, heterostructures of hBN/Graphene/hBN are photodoped in-operando, re
Externí odkaz:
http://arxiv.org/abs/2403.01998
Autor:
Cheng, Zhihui, Backman, Jonathan, Zhang, Huairuo, Abuzaid, Hattan, Li, Guoqing, Yu, Yifei, Cao, Linyou, Davydov, Albert V., Luisier, Mathieu, Richter, Curt A., Franklin, Aaron D.
Two-dimensional (2D) materials have great potential for use in future electronics due to their atomically thin nature which withstands short channel effects and thus enables better scalability. Device scaling is the process of reducing all device dim
Externí odkaz:
http://arxiv.org/abs/2209.04144
Autor:
Cheng, Zhihui, Pang, Chin-Sheng, Wang, Peiqi, Le, Son T., Wu, Yanqing, Shahrjerdi, Davood, Radu, Iuliana, Lemme, Max C., Peng, Lian-Mao, Duan, Xiangfeng, Chen, Zhihong, Appenzeller, Joerg, Koester, Steven J., Pop, Eric, Franklin, Aaron D., Richter, Curt A.
Publikováno v:
Nature Electronics 5 (2022) 416-423
Emerging low-dimensional nanomaterials have been studied for decades in device applications as field-effect transistors (FETs). However, properly reporting and comparing device performance has been challenging due to the involvement and interlinking
Externí odkaz:
http://arxiv.org/abs/2203.16759
Autor:
Le, Son T., Rigosi, Albert F., Hagmann, Joseph A., Gutierrez, Christopher, Lee, Ji Ung, Richter, Curt A.
The emergence of interference is observed in the resistance of a graphene annulus pn junction device as a result of applying two separate gate voltages. The observed resistance patterns are carefully inspected, and it is determined that the position
Externí odkaz:
http://arxiv.org/abs/2112.14614
Autor:
Le, Son T., Morris, Michelle A., Cardone, Antonio, Guros, Nicholas B., Klauda, Jeffery B., Sperling, Brent A., Richter, Curt A., Pant, Harish C., Balijepalli, Arvind
We show that simple, commercially sourced n-channel silicon field-effect transistors (nFETs) operating under closed loop control exhibit an ~3-fold improvement in pH readout resolution to (7.2+/-0.3)x10^-3 at a bandwidth of 10 Hz when compared with t
Externí odkaz:
http://arxiv.org/abs/1910.09509
Autor:
Le, Son T., Hagmann, Joseph A., Klimov, Nikolai, Newell, David, Lee, Ji Ung, Yan, Jun, Richter, Curt A.
We present the results of an experimental study of the interaction of quantized Landau level (LL) edge-states at the physical edge of graphene by using a graphene pn junction device with a ring-shaped geometry for the channel. The unique device geome
Externí odkaz:
http://arxiv.org/abs/1904.04726
Autor:
Guros, Nicholas B., Le, Son T., Zhang, Siyuan, Sperling, Brent A., Klauda, Jeffery B., Richter, Curt A., Balijepalli, Arvind
Metal-mediated exfoliation has been demonstrated as a promising approach for obtaining large-area flakes of 2D materials to fabricate prototypical nanoelectronics. However, several processing challenges related to organic contamination at the interfa
Externí odkaz:
http://arxiv.org/abs/1904.02189
Autor:
Le, Son T., Guros, Nicholas B., Bruce, Robert C., Cardone, Antonio, Amin, Niranjana D., Zhang, Siyuan, Klauda, Jeffery B., Pant, Harish C., Richter, Curt A., Balijepalli, Arvind
We have demonstrated atomically thin, quantum capacitance-limited, field-effect transistors (FETs) that enable the detection of pH changes with ~75-fold higher sensitivity (4.4 V/pH) over the Nernst value of 59 mV/pH at room temperature when used as
Externí odkaz:
http://arxiv.org/abs/1902.10234