Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Richard Wistrom"'
Publikováno v:
SPIE Proceedings.
The introduction of EUV lithography to high volume manufacturing is now within reach for 7nm technology node and beyond (1), at least for some steps. The scheduling is in transition from long to mid-term. Thus, all contributors need to focus their ef
Autor:
Yusuke Toda, Takeshi Isogawa, Michael Fahrenkopf, Yoshifumi Sakamoto, Richard Wistrom, Masayuki Kagawa, Jed H. Rankin, Amy E. Zweber, Thomas Faure, Steven Nash
Publikováno v:
SPIE Proceedings.
Over time mask makers have been driven to low sensitivity e-beam resist materials to meet lithographic patterning needs. For 7-nm logic node, resolution enhancement techniques continue to evolve bringing more complexity on mask and additional mask bu
Autor:
Richard Wistrom, Masayuki Kagawa, Kazuhiro Nishikawa, Yoshifumi Sakamoto, Takeshi Isogawa, Yusuke Toda, Mark Lawliss, Kazunori Seki, Yukio Inazuki, Lin Hu, Ramya Viswanathan, Thomas Faure, Yongan Xu, Amy E. Zweber, Karen D. Badger, Granger Lobb
Publikováno v:
SPIE Proceedings.
In this paper we will describe the development of a new 12% high transmission phase shift mask technology for use with the 10 nm logic node. The primary motivation for this work was to improve the lithographic process window for 10 nm node via hole p
Autor:
Matthew E. Colburn, Dan Fischer, Nelson Felix, Sean D. Burns, Yoshifumi Sakamoto, Todd Bailey, Tom Faure, Lin Hu, Ben Bleiman, Granger Lobb, Ioana Graur, Richard Wistrom, John Bolton, Yongan Xu, Ramya Viswanathan, John C. Arnold, Yusuke Toda, Yann Mignot
Publikováno v:
SPIE Proceedings.
In this paper, we discuss the lithographic qualification of high transmission (High T) mask for Via and contact hole applications in 10nm node and beyond. First, the simulated MEEF and depth of focus (DoF) data are compared between the 6% and High T
Autor:
Jeff Chen, Madhavi R. Chandrachood, Jeffrey X. Tran, Shaun Crawford, Keven Yu, Tom Faure, Peter Bartlau, Toi Leung, Darin Bivens, Rao Yalamanchili, Richard Wistrom, Michael N. Grimbergen, Yoshifumi Sakamoto
Publikováno v:
SPIE Proceedings.
While the industry is making progress to offer EUV lithography schemes to attain ultimate critical dimensions down to 20 nm half pitch, an interim optical lithography solution to address an immediate need for resolution is offered by various integrat
Autor:
Takeshi Isogawa, Richard Wistrom, Thomas B. Faure, Yoshifumi Sakamoto, Jeffery Panton, Anne E. McGuire
Publikováno v:
SPIE Proceedings.
As optical lithography is extended to the 14nm and 10nm technology nodes, sidewall angle (SWA) control of photomask features becomes increasingly important. The experiments to be reported here study SWA for advanced attenuated phase-shift photomasks.
Autor:
Jeff Chen, Emily Gallagher, Shaun Crawford, Toi Yue Becky Leung, Banqiu Wu, Richard Wistrom, Amitabh Sabharwal, Keven Yu, Tom Faure, John Whang, Michael N. Grimbergen, Madhavi R. Chandrachood
Publikováno v:
SPIE Proceedings.
Mask defectivity is often highlighted as one of the barriers to a manufacturable EUV solution. As EUV lithography matures, other components of mask making also emerge as key focus areas in the industry: critical dimension (CD) control, film variabili
Autor:
Yukio Inazuki, Tasuku Senna, Hiroki Yoshikawa, Satoru Nemoto, Kazunori Seki, Karen D. Badger, Louis Kindt, Satoshi Akutagawa, Shinich Igarashi, Kazuhiro Nishikawa, Tom Faure, Takashi Mizoguchi, Richard Wistrom, Jun Kotani
Publikováno v:
SPIE Proceedings.
The lithography challenges posed by the 20 nm and 14 nm nodes continue to place strict minimum feature size requirements on photomasks. The wide spread adoption of very aggressive Optical Proximity Correction (OPC) and computational lithography techn
Autor:
Kazunori Seki, Amy E. Zweber, Toru Komizo, Yukio Inazuki, Satoru Nemoto, Takashi Mizoguchi, Yutaka Kodera, Tom Faure, Richard Wistrom, Karen D. Badger, Kazuhiro Nishikawa, Shinpei Kondo, Tasuku Senna, Hiroki Yoshikawa, Louis Kindt
Publikováno v:
SPIE Proceedings.
The lithography challenges posed by the 22 nm node continue to place stringent requirements on photomasks. The dimensions of the mask features continue to shrink more deeply into the sub-wavelength scale. In this regime residual mask electromagnetic
Autor:
Shaun Crawford, Thomas B. Faure, Peter H. Bartlau, Satoru Nemoto, Richard Wistrom, Amy E. Zweber, Toru Komizo, Gary Reid
Publikováno v:
SPIE Proceedings.
Use of optical photomasks will extend to the 22-nm node and beyond. Mask minimum resolution and critical dimension (CD) requirements for this node are very challenging to the mask industry. Optimization of resist materials and resist thickness are ke