Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Richard Weisfield"'
Publikováno v:
Medical Imaging 2020: Physics of Medical Imaging.
Many improvements have been made to amorphous silicon (a-Si) flat panel detectors (FPDs) to meet the market needs for different x-ray imaging applications. With the current generation of a-Si FPDs the performance is limited by the a-Si thin film tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce866a7f6c351786687737560bfbfabe
https://doi.org/10.1117/12.2549469
https://doi.org/10.1117/12.2549469
Autor:
Larry E, Antonuk, Qihua, Zhao, Youcef, El-Mohri, Hong, Du, Yi, Wang, Robert A, Street, Jackson, Ho, Richard, Weisfield, William, Yao
Publikováno v:
Medical physics. 36(7)
Active matrix flat-panel imager (AMFPI) technology is being employed for an increasing variety of imaging applications. An important element in the adoption of this technology has been significant ongoing improvements in optical signal collection ach
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::c41130cf90111ebbbaeaa408bfce3f69
https://pubmed.ncbi.nlm.nih.gov/19673228
https://pubmed.ncbi.nlm.nih.gov/19673228
Publikováno v:
Physical Review B. 26:6643-6648
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ce88de604a4db9e2f575c42bca12974
https://doi.org/10.1103/physrevb.26.6643
https://doi.org/10.1103/physrevb.26.6643
Publikováno v:
Solar Energy Materials. 7:263-279
Pseudogap density of states (DOS) estimates from field effect, Schottky diode and M-I-S tunnel diode admittance measurements on several sets of identically prepared, codeposited a-Si:H samples are reported. Additional measurements of composition, opt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::98ec6777fce435605cff5c559f50c25c
https://doi.org/10.1016/0165-1633(82)90001-6
https://doi.org/10.1016/0165-1633(82)90001-6
Publikováno v:
Applied Physics Letters. 39:263-265
Changes in film deposition procedure have permitted us to measure, for the first time, field‐effect‐induced current multiplication up to 104 in sputtered a‐Si:H. The deduced Fermi‐level state density of the order of 1×1017 eV−1 cm−3 agre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4109183fdccda1135fa370ae1d5be535
https://doi.org/10.1063/1.92666
https://doi.org/10.1063/1.92666
The first objective is to determine whether field effect could be observed in samples of sputtered hydrogenated amorphous silicon, and, if it could, to compare the pseudogap density of states determined therefrom with estimates made by other methods
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5156fc8fad88abdfe81160586a6b61a
https://doi.org/10.2172/6419168
https://doi.org/10.2172/6419168
Publikováno v:
Applied Physics Letters. 40:755-755
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08dd2a8ea05328163f59971fc8914884
https://doi.org/10.1063/1.93291
https://doi.org/10.1063/1.93291
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Conference
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