Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Richard Siergiej"'
Publikováno v:
Thin Solid Films. 516:6052-6057
We have investigated the addition of silicon nitride (Si 3 N 4 ) thin films into sol–gel deposited lead zirconium titanate (PZT) stacks and quantified the effects of various adhesion layers on the ferroelectric characteristics of these stacks. Alth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b449cbc02eadfb21d26f3c34f5c2263b
https://doi.org/10.1016/j.tsf.2007.10.130
https://doi.org/10.1016/j.tsf.2007.10.130
Publikováno v:
Semiconductor Science and Technology. 18:S232-S238
To illustrate the variety and complexity of thermophotovoltaic (TPV) system designs, the present status of selected systems, ranging in power output from 50 W to 2 kW, is reviewed. The design and analysis of each of these power systems is complex due
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e0f47610031492813befb859f2466df
https://doi.org/10.1088/0268-1242/18/5/314
https://doi.org/10.1088/0268-1242/18/5/314
Autor:
Richard Siergiej, Annette Sandoval, Michele Turner, Samuel D. Link, Tansen Varghese, Ian Aeby, Michael Dashiell, Gerald Girard, Hassan Ehsani, F. Newman, Diana Llera-Hurlburt, Scott Endicter, Joseph Fiedor
Publikováno v:
2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
Yield data from a pilot-production run of thermophotovoltaic (TPV) devices are presented. A single lattice-mismatched 0.6 eV InGaAs epilayer device design was grown on 166 3-inch InP wafers by metalorganic vapor phase epitaxy (MOVPE) in a commercial
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e3b038ecc6a16acdf144ff644e34c33
https://doi.org/10.1109/wcpec.2006.279542
https://doi.org/10.1109/wcpec.2006.279542
Autor:
F. Newman, B. Wernsman, Annette Sandoval, Michele Turner, Ian Aeby, J.N. Fiedor, R. J. Wehrer, Gerald Girard, Richard Siergiej, Tansen Varghese, J.P. Maranchi, Scott Endicter
Publikováno v:
2006 IEEE 4th World Conference on Photovoltaic Energy Conference.
Experimental results are presented for lattice-mismatched (LMM) In 0.8Ga0.2As0.76P0.24 and Al 0.07Ga0.255In0.675As quaternary materials used in thermophotovoltaic (TPV) devices. Epistructures were grown on 3-inch diameter InP substrates by metalorgan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::68a161ab3331e19a2a01f944bb44f7fb
https://doi.org/10.1109/wcpec.2006.279541
https://doi.org/10.1109/wcpec.2006.279541
Autor:
Dan Taylor, Robert G. Mahorter, Susan L. Murray, Patrick M. Fourspring, Samuel D. Link, Bernard Wernsman, Sean J. Belanger, Richard Siergiej, Rebecca J. Wehrer, Fred Newman, Tom Rahmlow
Publikováno v:
AIP Conference Proceedings.
Advanced thermophotovoltaic (TPV) modules capable of producing > 0.3 W/cm2 at an efficiency > 22% while operating at a converter radiator and module temperature of 1228 K and 325 K, respectively, have been made. These advanced TPV modules are project
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da044b190e253032530356d42e5199ed
https://doi.org/10.1063/1.1867275
https://doi.org/10.1063/1.1867275
Autor:
Robert W. Schultz, Thomas M. Valko, Samar Sinharoy, Samuel D. Link, Bernard Wernsman, Rowan. L. Messham, Richard Siergiej, Rebecca J. Wehrer
Publikováno v:
AIP Conference Proceedings.
Power conversion in a thermophotovoltaic (TPV) system can be accomplished with single p‐n junctions which are interconnected on‐wafer (monolithic interconnected module (MIM) approach) or off‐wafer (individual chip module approach) to form large
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31197e90664c4c5f1902157321b31480
https://doi.org/10.1063/1.1841927
https://doi.org/10.1063/1.1841927
Autor:
J. Hills, F. Newman, Susan L. Murray, Mark A. Stan, Bernard Wernsman, Richard Siergiej, Christopher S. Murray
Publikováno v:
AIP Conference Proceedings.
With the device performance of 0.6eV InGaAs monolithic interconnected modules (MIMs) reaching open circuit voltages of 400 mV/junction and achieving excellent quantum efficiency, the next step to improve performance focuses on controlling the parasit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fd282c29ab31ae71246bd5706956dc3
https://doi.org/10.1063/1.1539397
https://doi.org/10.1063/1.1539397
Autor:
J. Hills, R. J. Wehrer, M. N. Palmisiano, B. Wernsman, F. Newman, S. D. Link, S. A. Derry, Richard Siergiej, C.S. Murray, D. R. Riley
Publikováno v:
Device Research Conference. Conference Digest (Cat. No.01TH8561).
Thermophotovoltaic (TPV) cells are a class of photovoltaic devices designed to convert radiant heat energy (/spl lambda/ > 1.5 /spl mu/m) to electrical power through the use of low bandgap (/spl sim/ 0.5 eV) semiconductor material systems. Efficienci
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d45970c6c3d80d7b33950bc45ce6d4a8
https://doi.org/10.1109/drc.2001.937913
https://doi.org/10.1109/drc.2001.937913
Autor:
G. A. Gruber, William H. Howland, Robert J. Hillard, Robert G. Mazur, Richard Siergiej, Stephen M. Ramey, S. Evseev
Publikováno v:
AIP Conference Proceedings.
A new metrology method has been developed for the monitoring of advanced gate dielectric processes associated with 0.1 μm technology. Unlike previous techniques that involved corona or Hg gate based methods, this technique measures all gate dielectr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8ec7d1292d307981b26f55c90bac851
https://doi.org/10.1063/1.1354382
https://doi.org/10.1063/1.1354382