Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Richard San Martin"'
Autor:
Richard San Martin, Shawn Walsh, K. Scott Wills, F. Scott Johnson, Ken Harvey, Stan Ashburn, Vladimir A. Ukraintsev, Hal Edwards, Philip Menz, Mi-Chang Chang
Publikováno v:
Journal of Applied Physics. 87:1485-1495
The scanning capacitance microscope (SCM) is a carrier-sensitive imaging tool based upon the well-known scanning-probe microscope (SPM). As reported in Edwards et al. [Appl. Phys. Lett. 72, 698 (1998)], scanning capacitance spectroscopy (SCS) is a ne
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae42eb6d1cbe411c901c16e3e64b406d
https://doi.org/10.1063/1.372039
https://doi.org/10.1063/1.372039
Scanning capacitance spectroscopy: An analytical technique for pn-junction delineation in Si devices
Autor:
Vladimir A. Ukraintsev, R. Scott List, C. Ken Shih, Rachel Mahaffy, Hal Edwards, Elisa U, Richard San Martin, Michael Gribelyuk, Rudye McGlothlin
Publikováno v:
Applied Physics Letters. 72:698-700
Scanning capacitance spectroscopy (SCS), a variant of scanning capacitance microscopy (SCM), is presented. By cycling the applied dc bias voltage between the tip and sample on successive scan lines, several points of the high-frequency capacitance–
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::96a977fddb7695750a3b071cf135ad7f
https://doi.org/10.1063/1.120849
https://doi.org/10.1063/1.120849
Autor:
Wilfried Vandervorst, Yufei Li, Diana L. Ottaviani, Douglas J. Thomson, D. Venables, Jochonia N. Nxumalo, Joseph J. Kopanski, Mi-Chang Chang, J. S. McMurray, Clayton C. Williams, Hal Edwards, Suneeta S. Neogi, Jay F. Marchiando, Charles F. Machala, Richard San Martin, Vladimir A. Ukraintsev, R. Scott List, Peter De Wolf, Brian G. Rennex, V. V. Zavyalov
Publikováno v:
The 1998 international conference on characterization and metrology for ULSI technology.
The lack of a two-dimensional (2D) dopant standard and hence a priori knowledge of dopant distribution makes it impossible to unambiguously judge accuracy of any experimental or theoretical effort to characterize silicon doping in two-dimensions. Rec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0f46c43ee84b2fa0cc4ad62bfc197641
https://doi.org/10.1063/1.56919
https://doi.org/10.1063/1.56919