Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Richard S. Hutton"'
Autor:
Richard S. Hutton, Ilya L. Rushkin, Elsa Reichmanis, A. Reiser, Zhenglin Yan, K. Bolan, Gary Dabbagh, Omkaram Nalamasu, F. M. Houlihan
Publikováno v:
Radiation Physics and Chemistry. 62:69-76
The dissolution inhibition mechanism for tert-butylcarboxylate (e.g. tert-butyl cholate) dissolution inhibitors and onium salt photoacid generators (PAG's) were examined in terpolymers of poly(norbornene-maleic anhydride-acrylic acid) (P(NB/MA/AA)).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20d9505832133fd8a06bbc502101cf5a
https://doi.org/10.1016/s0969-806x(01)00414-5
https://doi.org/10.1016/s0969-806x(01)00414-5
Autor:
J. Sousa, K. Bolan, Elsa Reichmanis, Ilya L. Rushkin, D. Osei, A. Reiser, Gary Dabbagh, Richard S. Hutton, F. M. Houlihan, Zhenglin Yan, Omkaram Nalamasu
Publikováno v:
Chemistry of Materials. 12:3516-3524
The progress of developer base into films of terpolymers of norbornene−maleic anhydride and acrylic acid was shown to be a percolation process with a critical site concentration of x(c) = 0.084, implying that every acrylic acid site in the terpolym
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2d35b0e40ba7663738b8253cb21f48f
https://doi.org/10.1021/cm000385k
https://doi.org/10.1021/cm000385k
Autor:
J. Sousa, Zhenglin Yan, Elsa Reichmanis, Ilya L. Rushkin, Richard S. Hutton, Gary Dabbagh, Omkaram Nalamasu, K. Bolan, D. Osei, F. M. Houlihan, A. Reiser
Publikováno v:
Journal of Photopolymer Science and Technology. 13:569-578
Using terpolymers of Poly(norbornene-alt-malefic anhydride-co-acrylic acid) [P(NB/MA/AA)], the dissolution inhibition mechanism for two types of common additives in 193nm resist formulations, tert-butylcarboxylate (e.g. tert-butyl cholate) dissolutio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ced3fe5da0284b20493d9f24a7c6855
https://doi.org/10.2494/photopolymer.13.569
https://doi.org/10.2494/photopolymer.13.569
Autor:
Thomas Steinhausler, Murrae J. Bowden, Patrick Foster, Allen G. Timko, John J. Biafore, Gregory Spaziano, Richard S. Hutton, F. M. Houlihan, Ilya L. Rushkin, Allen H. Gabor, Sydney G. Slater, Elsa Reichmanis, Gary Dabbagh, James R. Sweeney, Ognian N. Dimov, Mark Neisser, Om Nalamasu, R. Cirelli, Arturo N. Medina, Andrew J. Blakeney
Publikováno v:
Journal of Photopolymer Science and Technology. 12:423-432
The performance of a 193nm single layer resist based on a norbornene-malefic anhydride matrix resin has been optimized through a series of statistical design experiments. The SDE demonstrated the importance of setting the PEB temperature above the SB
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df25572160e8e9145f2d571789152bfa
https://doi.org/10.2494/photopolymer.12.423
https://doi.org/10.2494/photopolymer.12.423
Autor:
Ilya L. Rushkin, Richard S. Hutton, Roderick R. Kunz, Arturo N. Medina, Allen G. Timko, Elsa Reichmanis, D. K. Downs, Sanjay Malik, M. Neiser, Omkaram Nalamasu, F. M. Houlihan, Allen H. Gabor
Publikováno v:
Journal of Photopolymer Science and Technology. 12:525-535
The effect of different photoadditives in high and low activation energy resist resins on resist outgassing during lithographic exposure was studied by quartz microbalance and gas chromatography/mass spectroscopy techniques. The resist outgassing was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f76476dfd92f747dec4232cfea2b0245
https://doi.org/10.2494/photopolymer.12.525
https://doi.org/10.2494/photopolymer.12.525
Autor:
Anthony E. Novembre, Raymond A. Cirelli, Gary Dabbagh, Omkaram Nalamasu, Elsa Reichmanis, Richard S. Hutton
Publikováno v:
Journal of Photopolymer Science and Technology. 11:651-661
In this paper we report the results of a feasibility study of manufacturability of processes using plasma polymerized methylsilane (PPMS) as both a single-layer and a bilayer resist in both negative and positive tone development modes. PPMS has shown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::969dfc10d6d00fb73e912cc813070a36
https://doi.org/10.2494/photopolymer.11.651
https://doi.org/10.2494/photopolymer.11.651
Autor:
Elsa Reichmanis, F. M. Houlihan, O. R. Wood, R. Cirelli, Anthony E. Novembre, Gary Dabbagh, Omkaram Nalamasu, Richard S. Hutton, D. A. Mixon, Thomas Ingolf Wallow, Allen G. Timko
Publikováno v:
Microelectronic Engineering. 35:133-136
The intense absorption of aromatic molecules at 193 nm severely limits the use of conventional matrix aromatic resins such as novolac, poly vinyl phenol for 193 nm lithography. This paradigm shift in resist design provides opportunities for new chemi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6dda46f2f6a80ab40812dafd1e74ebbe
https://doi.org/10.1016/s0167-9317(96)00172-4
https://doi.org/10.1016/s0167-9317(96)00172-4
Autor:
Richard S. Hutton, Elsa Reichmanis, Omkaram Nalamasu, Thomas Ingolf Wallow, Allen G. Timko, E. Neria, F. M. Houlihan, Janet M. Kometani, R. Cirelli
Publikováno v:
Journal of Photopolymer Science and Technology. 10:511-520
We report on our recent investigations on the formulation and processing of 193 nm single layer photoresists based on alternating copolymers of cycloolefins with malefic anhydride. Resists formulated with cycloolefin copolymers are compatible with 0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f16392843083539096da06e8df1bfd36
https://doi.org/10.2494/photopolymer.10.511
https://doi.org/10.2494/photopolymer.10.511
Autor:
Susan M. Stein, Richard S. Hutton, Gary N. Taylor, Francis M. Houlihan, Marcia L. Manion Schilling, Howard E. Katz
Publikováno v:
Journal of The Electrochemical Society. 143:691-695
Electroless metallization processes have been used to develop photopatterned films of poly(diisopropyl vinylbenzylphosphonate-co-N-methylmaleimide) and deposit metallic nickel selectively in the exposed regions of the films. A 100 A thick film of nic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b130af1f91eecd829932018e34c2dee
https://doi.org/10.1149/1.1836502
https://doi.org/10.1149/1.1836502
Autor:
Zhenglin Yan, Ilya L. Rushkin, Omkaram Nalamasu, Arnost Reiser, Francis M. Houlihan, Elsa Reichmanis, Richard S. Hutton, Gary Dabbagh
Publikováno v:
Advances in Resist Technology and Processing XVII.
The fundamental nature of the interactions between poly (norbornene-alt-maleic anhydride) based resins and cholate based dissolution inhibitors (DIs) were studied by FT-IR and NMR spectroscopy. We also studied the role that photo-acid generators (PAG
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3585bde8b2e6c71a15c7409278deec5
https://doi.org/10.1117/12.388265
https://doi.org/10.1117/12.388265