Výsledky vyhledávání - "Richard S. Flores"

Single-Event Upsets and Distributions in Radiation-Hardened CMOS Flip-Flop Logic Chains

Autor: Dale McMorrow, Paul E. Dodd, G. Vizkelethy, J.R. Schwank, T.A. Hill, Marty R. Shaneyfelt, Scot E. Swanson, Scott M. Dalton, Richard S. Flores

Publikováno v: IEEE Transactions on Nuclear Science. 58:2695-2701

Single-event upsets are studied in digital logic cells in a radiation-hardened CMOS SOI technology. The sensitivity of SEU to different strike locations and hardening approaches is explored using broadbeam and focused beam experiments. Error distribu

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9ab173e4cc0ce831ad6154a6bf0d96e8
https://doi.org/10.1109/tns.2011.2169683

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Direct Comparison of Charge Collection in SOI Devices From Single-Photon and Two-Photon Laser Testing Techniques

Autor: Marty R. Shaneyfelt, J.R. Schwank, Scott M. Dalton, Dale McMorrow, G. Vizkelethy, Scot E. Swanson, Jeffrey Stevens, S B Buchner, Veronique Ferlet-Cavrois, P. M. Gouker, Paul E. Dodd, Richard S. Flores

Publikováno v: IEEE Transactions on Nuclear Science. 58:820-826

The amounts of charge collection by single-photon absorption (SPA) and by two-photon absorption (TPA) laser testing techniques have been directly compared using specially made SOI diodes. For SPA measurements and some TPA measurements, the back subst

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d20662c9814bbeeacdc84dade123fd3e
https://doi.org/10.1109/tns.2011.2128345

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An Embeddable SOI Radiation Sensor

Autor: A. Robinson, Scott M. Dalton, Richard S. Flores, T.A. Hill, Paul E. Dodd, Marty R. Shaneyfelt, J.R. Schwank, T.M. Gurrieri

Publikováno v: IEEE Transactions on Nuclear Science. 56:3372-3380

The feasibility of developing an embeddable silicon-on-insulator (SOI) buried oxide MOS dosimeter (RadFET) has been demonstrated. This dosimeter takes advantage of the inherent properties for radiation-induced charge buildup in the buried oxides of c

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ac6b7959f5deb9767215a2b6b33fc8a7
https://doi.org/10.1109/tns.2009.2033474

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Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains

Autor: M. Gaillardin, Marty R. Shaneyfelt, F. Essely, V.F. Cavrois, Vincent Pouget, Joseph S. Melinger, Dale McMorrow, N. Fel, P. Paillet, Daisuke Kobayashi, J.R. Schwank, Richard S. Flores, Olivier Duhamel, Paul E. Dodd

Publikováno v: IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, 2008, 55 (6), pp.2842-2853
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2008, 55 (6), pp.2842-2853

The propagation of single event transients (SET) is measured and modeled in SOI and bulk inverter chains. The propagation-induced pulse broadening (PIPB) effect is shown to determine the SET pulse width measured at the output of long chains of invert

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a24bd79a1ed5719e68a64fcfae1288f
https://doi.org/10.1109/tns.2008.2007724

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Effects of Total Dose Irradiation on Single-Event Upset Hardness

Autor: P. Paillet, Marty R. Shaneyfelt, G.L. Hash, J. Baggio, V. Ferlet-Cavrois, Richard S. Flores, Ewart W. Blackmore, J.A. Felix, Lloyd W. Massengill, J.R. Schwank, Paul E. Dodd

Publikováno v: IEEE Transactions on Nuclear Science. 53:1772-1778

The effect of total dose on SEU hardness is investigated as a function of temperature and power supply voltage to determine worst-case hardness assurance test conditions for space environments. SRAMs from six different vendors were characterized for

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3a7fafe8e3a95d242fa30c2634568176
https://doi.org/10.1109/tns.2006.877896

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A Radiation-Hardened Structured ASIC

Autor: Richard S. Flores

Publikováno v: EDFA Technical Articles. 8:28-34

Government and military ICs, like their commercial counterparts, are subject to ever-tightening cost, performance, and time-to-market demands. They must also comply with strict lifetime, reliability, and radiation hardness standards. In dealing with

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::850fcd64c3998320904cdbb1a670963c
https://doi.org/10.31399/asm.edfa.2006-2.p028

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Focused Ion Beam (FIB) Tunable Circuits

Autor: Richard S. Flores

Publikováno v: EDFA Technical Articles. 6:6-11

This article explains how the addition of FIB tunable circuits in critical paths on ICs can alleviate some of the challenges encountered during the implementation of mixed-signal ASICs. It walks readers through the implementation of a particular digi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::533158cb34df44ad18e1ad2a0f451489
https://doi.org/10.31399/asm.edfa.2004-2.p006

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Impact of technology trends on SEU in CMOS SRAMs

Autor: G.L. Hash, F.W. Sexton, Paul E. Dodd, Bruce L. Draper, A.J. Farino, Richard S. Flores, Marty R. Shaneyfelt

Publikováno v: IEEE Transactions on Nuclear Science. 43:2797-2804

The impact of technology trends on the SEU hardness of epitaxial CMOS SRAMs is investigated using three-dimensional simulation. We study trends in SEU susceptibility with parameter variations across and within technology generations. Upset mechanisms

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a8702cc2cf254e02056ac295f38759f3
https://doi.org/10.1109/23.556869

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ViArray standard platforms: Rad-hard structured ASICs for digital and mixed-signal applications

Autor: John Teifel, Cynthia Begay, Jeremy A. Palmer, Richard S. Flores, Kwok Kee Ma, Sean Pearson

Publikováno v: 2012 IEEE Aerospace Conference.

Sandia's radiation-hardened ViArray standard platforms use via-configurable circuits to create quick-turn, low-cost structured ASICs (Application Specific Integrated Circuits). Via-configurable technology enables performance similar to standard-cell

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ec4454fba8217207846b3d22a1e8959a
https://doi.org/10.1109/aero.2012.6187235

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Pseudo-Soft Defect Localization

Autor: Rick McFarland, Sean Pearson, Paiboon Tangyunyong, Richard S. Flores, Marco O. Sanchez

Publikováno v: International Symposium for Testing and Failure Analysis.

In this paper, we describe a modified soft defect localization (SDL) technique, PSDL (pseudo-soft defect localization), to localize pseudo-soft defects in integrated circuits (ICs). Similar to soft defects, functional failures due to pseudo-soft defe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a5d61469c26015cd8a28e1d0f54a98a4
https://doi.org/10.31399/asm.cp.istfa2009p0038

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