Direct Comparison of Charge Collection in SOI Devices From Single-Photon and Two-Photon Laser Testing Techniques

Autor: Marty R. Shaneyfelt, J.R. Schwank, Scott M. Dalton, Dale McMorrow, G. Vizkelethy, Scot E. Swanson, Jeffrey Stevens, S B Buchner, Veronique Ferlet-Cavrois, P. M. Gouker, Paul E. Dodd, Richard S. Flores

Publikováno v: IEEE Transactions on Nuclear Science. 58:820-826

The amounts of charge collection by single-photon absorption (SPA) and by two-photon absorption (TPA) laser testing techniques have been directly compared using specially made SOI diodes. For SPA measurements and some TPA measurements, the back subst

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d20662c9814bbeeacdc84dade123fd3e
https://doi.org/10.1109/tns.2011.2128345

Investigation of the Propagation Induced Pulse Broadening (PIPB) Effect on Single Event Transients in SOI and Bulk Inverter Chains

Autor: M. Gaillardin, Marty R. Shaneyfelt, F. Essely, V.F. Cavrois, Vincent Pouget, Joseph S. Melinger, Dale McMorrow, N. Fel, P. Paillet, Daisuke Kobayashi, J.R. Schwank, Richard S. Flores, Olivier Duhamel, Paul E. Dodd

Publikováno v: IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, 2008, 55 (6), pp.2842-2853
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2008, 55 (6), pp.2842-2853

The propagation of single event transients (SET) is measured and modeled in SOI and bulk inverter chains. The propagation-induced pulse broadening (PIPB) effect is shown to determine the SET pulse width measured at the output of long chains of invert

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a24bd79a1ed5719e68a64fcfae1288f
https://doi.org/10.1109/tns.2008.2007724

A Radiation-Hardened Structured ASIC

Autor: Richard S. Flores

Publikováno v: EDFA Technical Articles. 8:28-34

Government and military ICs, like their commercial counterparts, are subject to ever-tightening cost, performance, and time-to-market demands. They must also comply with strict lifetime, reliability, and radiation hardness standards. In dealing with

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::850fcd64c3998320904cdbb1a670963c
https://doi.org/10.31399/asm.edfa.2006-2.p028

ViArray standard platforms: Rad-hard structured ASICs for digital and mixed-signal applications

Autor: John Teifel, Cynthia Begay, Jeremy A. Palmer, Richard S. Flores, Kwok Kee Ma, Sean Pearson

Publikováno v: 2012 IEEE Aerospace Conference.

Sandia's radiation-hardened ViArray standard platforms use via-configurable circuits to create quick-turn, low-cost structured ASICs (Application Specific Integrated Circuits). Via-configurable technology enables performance similar to standard-cell

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ec4454fba8217207846b3d22a1e8959a
https://doi.org/10.1109/aero.2012.6187235

Novel Application of Transmission Electron Microscopy and Scanning Capacitance Microscopy for Defect Root Cause Identification and Yield Enhancement

Autor: Robert C. Dockerty, Paiboon Tangyunyong, Marty R. Shaneyfelt, Edward I. Cole, Thomas J. Headley, Michael J. Rye, Craig Yoshimi Nakakura, T.A. Hill, Jerry M. Soden, Richard S. Flores

Publikováno v: International Symposium for Testing and Failure Analysis.

Transmission electron microscopy (TEM) [1] and scanning capacitance microscopy (SCM) [2] have become common failure analysis tools at Sandia for new product development, process validation, and yield enhancement. These two techniques provide informat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::77a868029636f75e0a97d9d470a3f363
https://doi.org/10.31399/asm.cp.istfa2003p0197