Effect of band mismatch on minority carrier transport in heterojunction solar cells

Autor: Jian V. Li, Richard S. Crandall

Publikováno v: Solar Energy Materials and Solar Cells. 129:13-16

By using transient-capacitance techniques we probe the mechanism of hole transport in amorphous/crystalline silicon heterojunction solar cells. The devices are formed by depositing undoped amorphous silicon followed by p-type amorphous silicon on n-t

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::76cd27589bb007541c3c7beb3ed621fb
https://doi.org/10.1016/j.solmat.2013.11.012

Light-induced metastability in pure and hydrogenated amorphous silicon

Autor: Julie Karel, Daniel Queen, Frances Hellman, Thomas Metcalf, Qi Wang, Xiao Liu, Richard S. Crandall

Publikováno v: EPL (Europhysics Letters), vol 112, iss 2
Queen, DR; Liu, X; Karel, J; Wang, Q; Crandall, RS; Metcalf, TH; et al.(2015). Light-induced metastability in pure and hydrogenated amorphous silicon. EPL, 112(2). doi: 10.1209/0295-5075/112/26001. UC Berkeley: Retrieved from: http://www.escholarship.org/uc/item/0df7c490
EPL, vol 112, iss 2

Author(s): Queen, DR; Liu, X; Karel, J; Wang, Q; Crandall, RS; Metcalf, TH; Hellman, F | Abstract: Light soaking is found to increase the specific heat C and internal friction Q−1 of pure (a-Si) and hydrogenated (a-Si:H) amorphous silicon. At the l

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::febb4a00273350975cc9832f5218a962
https://escholarship.org/uc/item/0df7c490

Switching and filament formation in hot-wire CVD p-type a-Si:H devices

Autor: Howard M. Branz, Richard S. Crandall, Scott Ward, Jian Hu, Qi Wang

Publikováno v: Thin Solid Films. 430:249-252

We fabricate metal/a-Si/metal thin film switches which incorporate hot-wire chemical vapor deposition (HWCVD) Si layers. A H-diluted gas mixture is used to grow the B-doped, 1000 A hydrogenated amorphous silicon (a-Si:H) layers at approximately 10 A/

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6d8c89c807aa354c03d9c64a5a4c0d32
https://doi.org/10.1016/s0040-6090(03)00117-2

Disorder in tetrahedrally bonded amorphous solids

Autor: Douglas M. Photiadis, Xiao Liu, Richard S. Crandall, Robert O. Pohl, D. B. Chrisey, H. D. Wu

Publikováno v: Philosophical Magazine B. 82:185-195

We have recently found that the density of the low-energy excitations in amorphous silicon films and, in particular, in hydrogenated amorphous silicon (a-Si: H) films can decrease by over three orders of magnitude, to a level of complete disappearanc

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::fa7352fbd527e494b439e2563153cda0
https://doi.org/10.1080/13642810208208541

High-deposition rate a-Si:H n–i–p solar cells grown by HWCVD

Autor: Richard S. Crandall, Brent P. Nelson, Qi Wang, Eugene Iwaniczko, Yueqin Xu, Howard M. Branz, A. Harv Mahan

Publikováno v: Thin Solid Films. 395:292-297

We grow hydrogenated amorphous silicon (a-Si:H) solar cells in a device structure denoted as SS/n–i–p/ITO. We grow all the a-Si:H layers by hot-wire chemical vapor deposition (HWCVD) and the indium-tin-oxide (ITO) by reactive evaporation. We are

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ae4246c9b6d27bef8190389ece741c63
https://doi.org/10.1016/s0040-6090(01)01274-3