Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Richard Rogoff"'
Autor:
Guy Davies, Peter van Oorschot, Gabrielle Kalmbach, Johannes Wangler, Richard Rogoff, Jan Mulkens, Jos de Klerk, Wolfgang Dr Rupp
Publikováno v:
SPIE Proceedings.
This paper shows the suitabilily of i-line photolithography for production at 0.30 tm. The process performance is demonstrated through the use of off-axis illumination, high NA projection lens, and a state of the art photoresist system. The minimum r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::05cab658940e44ce1462a740ddb37f82
https://doi.org/10.1117/12.240954
https://doi.org/10.1117/12.240954
Autor:
Richard Rogoff, Donis G. Flagello
Publikováno v:
SPIE Proceedings.
The theoretical foundation for high NA imaging, which has been previously presented is used to examine the effects of the photoresist film on the optical performance of an advanced lithographic lens. We show that the high NA image formed by the lens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0673a994f65dcbe2a7ff88e87003ff2f
https://doi.org/10.1117/12.209265
https://doi.org/10.1117/12.209265
Publikováno v:
SPIE Proceedings.
A novel technology has been developed whereby a database of reticle specific compensation can be utilized to correct for magnification, rotation, and translational reticle manufacturing errors. Whenever a given reticle is loaded into the stepper, a r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f184059ffa50be40d65b7667369a98aa
https://doi.org/10.1117/12.175468
https://doi.org/10.1117/12.175468
Autor:
Barton A. Katz, Patrick Reynolds, Craig B. Sager, Richard Rogoff, James Foster, J. Brett Rolfson, William T. Rericha, Richard D. Holscher
Publikováno v:
SPIE Proceedings.
There is growing consensus that 350 nm design rules will be accomplished using i-line lithography. Recent developments in i-line lithography have pushed NA and field size to acceptable levels for 64 MB DRAM manufacturing. Simpler PSM technologies may
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad016602c9024f7745ca1f9edbbbf0bf
https://doi.org/10.1117/12.175437
https://doi.org/10.1117/12.175437
Publikováno v:
SPIE Proceedings.
I-line lithography, together with single-layer resist processes, practically, have been limited to 0.45 micrometers design rules in the semiconductor industry. For design rules of 0.4 micrometers and below, several contrast enhanced methods have been
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fd780067ccda052e3867e70ab1e1ee9
https://doi.org/10.1117/12.150434
https://doi.org/10.1117/12.150434
Autor:
Steve D. Slonaker, Douglas R. Ritchie, Barton A. Katz, James S. Greeneich, Richard Rogoff, Stefan Wittekoek, Martin A. van den Brink, Paul Frank Luehrmann
Publikováno v:
SPIE Proceedings.
Many lithographic approaches to achieving 0.35 micron IC design rules have been proposed. Several years ago, the primary candidate was x-ray lithography. Today it is generally acknowledged that an optical approach will be used for such design rules.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d4a76a02de5c11157fe312e90f1116f
https://doi.org/10.1117/12.130363
https://doi.org/10.1117/12.130363
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