Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Richard Noetzel"'
Electrochemical Detection of Trace Arsenic (III) by functionalized In0.38Ga0.62N/Si(1 1 1) electrode
Publikováno v:
Materials Letters. 236:587-590
We report here the electro-analytical potential of directly grown epitaxial In0.38Ga0.62N/Si(1 1 1) using cyclic voltammetry and impedance spectroscopy. Current characteristic of In0.38Ga0.62N electrode was found ∼400 times higher than that of bare
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::142881ba5782be763bfc7a553f27441c
https://doi.org/10.1016/j.matlet.2018.10.178
https://doi.org/10.1016/j.matlet.2018.10.178
Autor:
Paul E. D. Soto Rodriguez, Manish Kumar, Praveen Kumar, Chhavi Sharma, Richard Noetzel, Pooja Devi, V.D Shivling, Ravindra Kumar Sinha, Mahesh Kumar
Publikováno v:
Optical Materials. 79:475-479
We show a flux dependence changes in structural, optical and electronic properties of InxGa1-xN nanostructures (NSs) namely nanocolumns (NCs), nanoflakes (NFs) and nanowall network (NWN) grown directly on Si(111) surface. Field emission scanning elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9a8030138a6ea283bf2b8fe9f21e66d
https://doi.org/10.1016/j.optmat.2018.04.003
https://doi.org/10.1016/j.optmat.2018.04.003
Autor:
Richard Noetzel, Lei Jiang, Douxing Pan, Ahmad Umar, Yao Wang, Wenle Pei, Jinrong Wang, Li Nan, Hao Li, Peng Xie, Zhuo Chen, Guofu Zhou, Nicolaas Frans de Rooij
Publikováno v:
ACS Nano. 12:2521-2530
Inspired by the densely covered capillary structure inside a dog's nose, we report an artificial nanostructure, i. e., poly(sodium p-styrenesulfonate)-functionalized reduced graphene oxide nanoscrolls (PGNS), with high structural perfection and effic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4ab70caffb67cad68d2a3a5b6c9f8a44
https://doi.org/10.1021/acsnano.7b08294
https://doi.org/10.1021/acsnano.7b08294
Autor:
K. H. Ploog, M. Ramsteiner, A. Richter, Christoph Lienau, Thomas Elsaesser, M. Süptitz, G. Behme, Richard Noetzel
Publikováno v:
Technical Digest. Summaries of Papers Presented at the International Quantum Electronics Conference. Conference Edition. 1998 Technical Digest Series, Vol.7 (IEEE Cat. No.98CH36236).
Quasi-one-dimensional semiconductor structures have attracted much interest, both from the viewpoint of fundamental physics and for device applications. Until now, the optical properties and the nonequilibrium carrier dynamics in such quantum wires (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4842aee2798a3cc55748a4e8feeb4201
https://doi.org/10.1109/iqec.1998.680193
https://doi.org/10.1109/iqec.1998.680193
Autor:
Klaus H. Ploog, Richard Noetzel, T. Guenther, Thomas Elsaesser, Francesca Intonti, Christoph Lienau, Valentina Emiliani
Publikováno v:
SPIE Proceedings.
Carrier dynamics in single quasi-1D GaAs quantum wires are studied in a wide temperature range by near-field scanning optical microscopy using pico- and femtosecond pulses. Luminescence and pump-probe experiments with a spatial resolution of 250 nm a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53c6010f6f2ba01cf28b68c316e37854
https://doi.org/10.1117/12.381461
https://doi.org/10.1117/12.381461
Publikováno v:
Spectroscopic Characterization Techniques for Semiconductor Technology V.
Semiconductor surfaces develop orientation dependent morphologies during growth that can be used for fabrication of nanostructured materials. We have applied RHEED techniques to study during MBE the nanometer-scale morphologies on non-(001)-oriented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c909d4f0d96b71f42278f0cdd61b8db
https://doi.org/10.1117/12.176845
https://doi.org/10.1117/12.176845
Autor:
Klaus H. Ploog, Richard Noetzel
Publikováno v:
SPIE Proceedings.
The evolution of ordered surface and interface structures on (111), (211), and (311) GaAs during molecular beam epitaxy offers the unique possibility to directly synthesize GaAs quantum wires and quantum dots in an AlAs matrix. We show that well orde
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed6d79d38ae83ad4f00fbfde707f6a9b
https://doi.org/10.1117/12.137645
https://doi.org/10.1117/12.137645
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