Výsledky vyhledávání - "Richard L. Wells"

Adsorption Characteristics of Powders of Nanometric Gallium Nitride and Aluminium Nitride

Autor: Jerzy F. Janik, Richard L. Wells, L. Czepirski, E. Komorowska-Czepirska

Publikováno v: Adsorption Science & Technology, Vol 20 (2002)

The results of studies on new precursors for the preparation of gallium nitride and aluminium nitride were presented. The samples obtained were characterised by argon adsorption at 77 K. The variation of the porous structure parameters with the pyrol

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::042b572da35539f81ad4b1ae473d193d
https://doi.org/10.1260/026361702321104228

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[Untitled]

Autor: Richard L. Wells, R. Jason Jouet, Jerzy F. Janik, Andrew P. Purdy

Publikováno v: Journal of Cluster Science. 13:469-486

Gallium imide, {Ga(NH)3/2} n , was sealed in quartz tubes with anhydrous NH3 and NH4X (X=Cl, Br, I) and heated vertically in an autoclave with the hot-zone (bottom) temperature ranging from 300–530°C. With NH4I mineralizer, the imide was converted

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f24510a87caf7e2d758fa5f39fa9df1b
https://doi.org/10.1023/a:1021119527133

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STM and TS Study of InAs Quantum Dots Immobilized on Au and Pt Surfaces

Autor: Louis A. Coury, Richard L. Wells, Lara I. Halaoui

Publikováno v: Chemistry of Materials. 12:1205-1216

The first study of the electrical properties of nanometer-size InAs particles is presented. InAs quantum dots (Q-InAs) deposited as films onto Pt and Au electrodes are examined using scanning tunneling microscopy (STM), tunneling spectroscopy (TS), a

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https://doi.org/10.1021/cm9902927

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Synthesis and characterization of single-source precursors to nanocrystalline GaP, GaPxAs1−x, and GaPxSb1−x. X-ray crystal structures of [Et2GaP(SiMe3)2]2, (Me3Si)2P[μ-GaEt2]2As(SiMe3)2, and (Me3Si)2P[μ-GaEt2]2Sb(SiMe3)2

Autor: Richard J. Jouet, Christopher D. Incarvito, Richard L. Wells, Arnold L. Rheingold

Publikováno v: Journal of Organometallic Chemistry. 601:191-198

The 1:1 mole ratio reaction of Et 2 GaCl with P(SiMe 3 ) 3 resulted in the formation of [Et 2 GaP(SiMe 3 ) 2 ] 2 ( 1 ). The mixed-pnicogen compounds (Me 3 Si) 2 P[μ-GaEt 2 ] 2 As(SiMe 3 ) 2 ( 2 ) and (Me 3 Si) 2 P[μ-GaEt 2 ] 2 Sb(SiMe 3 ) 2 ( 3 ) w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e1777f878965512f6f6c47cf6d112cca
https://doi.org/10.1016/s0022-328x(00)00055-3

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Preparation of [Et2InSb(SiMe3)2]3; a trimeric single-source precursor to indium antimonide

Autor: Richard L. Wells, Richard J. Jouet, Edward E. Foos, Peter S. White

Publikováno v: Journal of Organometallic Chemistry. 598:182-186

The 1:1 mole ratio reaction of Et 2 InCl with Sb(SiMe 3 ) 3 results in the formation of [Et 2 InSb(SiMe 3 ) 2 ] 3 ( 1 ), a trimeric compound containing a six-membered indium–antimony ring. An X-ray crystal structure has been obtained for the compou

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::de30889ed7640c93e729769d07c8dcab
https://doi.org/10.1016/s0022-328x(99)00674-9

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Preparation of single-source precursors to nanocrystalline gallium arsenide and gallium antimonide. X-ray crystal structures of [Et2GaAs(SiMe3)2]2, [Et2GaSb(SiMe3)2]2 and Et2b(SiMe3)2

Autor: Louise M. Liable-Sands, Richard L. Wells, Edward E. Foos, Richard J. Jouet, Arnold L. Rheingold

Publikováno v: Journal of Organometallic Chemistry. 582:45-52

The 1:1 mole ratio reaction of Et2GaCl with As(SiMe3)3 leads to the isolation of [Et2GaAs(SiMe3)2]2 (1), while the analogous reaction with Sb(SiMe3)3 results in the formation of [Et2GaSb(SiMe3)2]2 (2). The mixed-pnicogen compound Et2 GaAs(SiMe 3 ) 2

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7cce4473f34f2dcff3a11d774fca16a0
https://doi.org/10.1016/s0022-328x(98)01184-x

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Autor: Arnold L. Rheingold, Edward E. Foos, Richard L. Wells

Publikováno v: Journal of Cluster Science. 10:121-131

The 1:1 mole ratio reaction of t-Bu3In with Sb(SiMe3)3 results in the formation of the Lewis acid-base adduct t-Bu3In • Sb(SiMe3)3 (1), while the dimeric compound [t-Bu2InSb(SiMe3)2]2 (2) is isolated from the 1:1 reaction of t-Bu2InCl with Sb(SiMe3

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f8103843a80bb986d019c6cc23c12917
https://doi.org/10.1023/a:1022608802635

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N-bridged and H-bridged aminoalanes: Single-crystal X-ray structure determinations for the planar dimer {[(Me3Si)2N]2Al(μ-H)}2 and the puckered four-membered ring compound (Me3Si)2N(Me2N)Al(μ-NMe2)2Al(H)N(SiMe3)2

Autor: Jerzy F. Janik, Richard L. Wells, Ilia A. Guzei, Arnold L. Rheingold

Publikováno v: Polyhedron. 17:4101-4108

The known bis(bis(trimethylsilyl)amino)alane {[(Me 3 Si) 2 N] 2 Al( μ -H)} 2 (1) is obtained from disproportionation of the base-stabilized monomeric bis(trimethylsilyl)aminoalane [(Me 3 Si) 2 NAlH 2 ] · NMe 3 in refluxing toluene. The single-cryst

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::86ac13ba557690b296c6e514b07d5f3a
https://doi.org/10.1016/s0277-5387(98)00215-0

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Reactions of H3Al·NMe3 with E(SiMe3)3 (E = P, As). Structural Characterization of the Trimer [H2AlP(SiMe3)2]3 and Base-Stabilized Adduct [H2AlAs(SiMe3)2]·NMe3 and Their Thermal Decomposition toward Nanocrystalline AlP and AlAs, Respectively

Autor: Jerzy F. Janik, Peter S. White, Richard L. Wells

Publikováno v: Inorganic Chemistry. 37:3561-3566

Dehydrosilylation reactions in diethyl ether between H(3)Al.NMe(3) and E(SiMe(3))(3) afforded for E = P a high yield of the trimer [H(2)AlP(SiMe(3))(2)](3) (1), while for E = As a monomeric base-stabilized adduct [H(2)AlAs(SiMe(3))(2)].NMe(3) (2) as

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6e36be0e5817ceec36c748bd15e07ee6
https://doi.org/10.1021/ic980218a

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