Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Richard J Gallegos"'
Autor:
Michael J. Abere, Richard J. Gallegos, Matthew W. Moorman, Mark A. Rodriguez, Paul G. Kotula, Rick A. Kellogg, David P. Adams
Publikováno v:
Micro and Nano Engineering, Vol 23, Iss , Pp 100243- (2024)
A thermally driven, micrometer-scale switch technology has been created that utilizes the ErH3/Er2O3 materials system. The technology is comprised of novel thin film switches, interconnects, on-board micro-scale heaters for passive thermal environmen
Externí odkaz:
https://doaj.org/article/6a10ea94df0f4331b1a2ce397a3dd441
Autor:
Gregory W. Pickrell, Andrew M. Armstrong, Andrew A. Allerman, Mary H. Crawford, Daniel Feezell, Morteza Monavarian, Isaac Stricklin, Fred J Zutavern, Alan Mar, Emily Hirsch, Jack D. Flicker, Jarod J Delhotal, Joseph Dana Teague, Jane M. Lehr, Karen C. Cross, Caleb E. Glaser, Michael S Van Heukelom, Richard J Gallegos, Verle H Bigman, Robert J. Kaplar
Publikováno v:
ECS Meeting Abstracts. :1156-1156
Semiconductor materials with wide bandgaps, including GaN and AlxGa1-xN, offer many performance advantages for power electronic devices compared to conventional Si-based devices. These include larger critical electric fields enabling higher reverse b
Autor:
Steven C. Sandven, Scot W. McDermott, Samuel C. Rogers, Richard J. Gallegos, John D. Gonglewski, Michael L. Shilko, David Charles Dayton, James A. Dowling, Kristen M. Turner
Publikováno v:
SPIE Proceedings.
The performance of operational military E-O systems including imaging FLIRs, target designators, and laser rangefinders (LRF) is limited by atmospheric refractive- index turbulence. In locations subject to intense daytime heating and significant nigh