Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Richard Hudeczek"'
Publikováno v:
IEEE Access, Vol 10, Pp 64388-64407 (2022)
Emerging new communication standards like 5G or 6G aggravate the circuit design of radio-frequency generation systems as they constantly increase demand on high bandwidths, low latency, and high spectral purity. The utilization of high- $Q $ oscillat
Externí odkaz:
https://doaj.org/article/12371dd158ec431d88b1b16287afabdb
Publikováno v:
IEEE Access. 10:64388-64407
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ccaddb5196f73cd8aa0522645d39306f
https://doi.org/10.1109/access.2022.3182695
https://doi.org/10.1109/access.2022.3182695
Publikováno v:
IEEE Transactions on Electron Devices. 68:4780-4786
This article presents a method for modeling high- ${Q}$ resonant-fin transistors with focus on circuit design simulations. The model is implemented for simulations in a SPICE-like design environment and is based on two basic properties of the resonat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0136ec9ed4ff7ceb25be06280bf60eb0
https://doi.org/10.1109/ted.2021.3097302
https://doi.org/10.1109/ted.2021.3097302
Autor:
Peter Baumgartner, Richard Hudeczek
Publikováno v:
IEEE Transactions on Electron Devices. 67:4578-4581
To pave the way for system-on-chip MEMS confinement up to 50 GHz, the mechanical properties of a CMOS back-end-of-line (BEOL) are studied by analytic and finite element approaches. In particular, the two main directions of vertical and horizontal wav
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2627601baf8dcc8cfb7f6d38caf5e436
https://doi.org/10.1109/ted.2020.3025521
https://doi.org/10.1109/ted.2020.3025521
Autor:
Richard Hudeczek, Peter Baumgartner
Publikováno v:
ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f5b2f6e2b3e2449da59b19d594a8af8
https://doi.org/10.1109/essderc53440.2021.9631769
https://doi.org/10.1109/essderc53440.2021.9631769
Publikováno v:
Applied Physics B. 125
GaN nanowires (NWs) are promising candidates for photocatalytic devices due to their large surface-to-volume ratio and their waveguide character. Protective coatings and nanoparticle co-catalysts are widely used to improve the stability and the photo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dce8d3945fe853d7623fce6cb87907a0
https://doi.org/10.1007/s00340-019-7187-y
https://doi.org/10.1007/s00340-019-7187-y
Publikováno v:
Journal of Applied Physics. 123:203104
GaN nanowire (NW) arrays are interesting candidates for photocatalytic applications due to their high surface-to-volume ratio and their waveguide character. The integration of GaN NW arrays on GaN-based light emitting diodes (LEDs), serving as a plat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad9f46f5cb74c9f799f14ccf903589fa
https://doi.org/10.1063/1.5028476
https://doi.org/10.1063/1.5028476