Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Richard Hentrich"'
Autor:
Anja U. B. Wolter, Xiaochen Hong, Yuan Li, Bernd Büchner, Tino Schreiner, Arthur R. Witte, Danny Baumann, Weiliang Yao, Christian Hess, Nicolás Pérez, Matthias Gillig, Vilmos Kocsis, Richard Hentrich
Publikováno v:
Physical Review B. 104
Autor:
Lukas Janssen, Thomas Doert, Christian Hess, Richard Hentrich, Uli Zeitler, Xiaochen Hong, Maria Roslova, Matthias Gillig, Anna Isaeva, Federico Caglieris, Matthias Vojta, Bernd Büchner, Maryam Shahrokhvand, Matija Čulo
Publikováno v:
Physical Review B. 102
We investigate the phononic in-plane longitudinal low-temperature thermal conductivity ${\ensuremath{\kappa}}_{ab}$ of the Kitaev quantum magnet $\ensuremath{\alpha}\text{\ensuremath{-}}\mathrm{Ru}{\mathrm{Cl}}_{3}$ for large in-plane magnetic fields
Autor:
Maria Roslova, Richard Hentrich, Anna Isaeva, Wolfram Brenig, Christian Hess, Bernd Büchner, Thomas Doert
Publikováno v:
Physical Review B. 99
The honeycomb Kitaev model in a magnetic field is a source of a topological quantum spin liquid with Majorana fermions and gauge flux excitations as fractional quasiparticles. We present experimental results for the thermal Hall effect of the materia
Autor:
Hendrik Bentmann, Raphael C. Vidal, Simon Moser, Thomas Doert, Martin Kaiser, K. Kißner, Friedrich Reinert, Bernd Rellinghaus, S. Gaß, Oliver Oeckler, Alexander Zeugner, Chul Hee Min, Francesco Scaravaggi, Richard Hentrich, M. Ünzelmann, Michael Ruck, Kornelius Nielsch, Celso I. Fornari, S. Schatz, Thiago R. F. Peixoto, Anna Isaeva, Bernd Büchner, Darius Pohl, Frederik Nietschke, Christian Hess, Anja U. B. Wolter, Axel Lubk, Christine Damm
Publikováno v:
Chemistry of materials 31(8), 2795-2806 (2019). doi:10.1021/acs.chemmater.8b05017
Chemistry of materials 31(8), 2795 - 2806 (2019). doi:10.1021/acs.chemmater.8b05017
High-quality single crystals of MnBi2Te4 are grown for the first time by slow cooling within a narrow range between the melting points of Bi$_2$Te$_3$ (586 °C)
High-quality single crystals of MnBi2Te4 are grown for the first time by slow cooling within a narrow range between the melting points of Bi$_2$Te$_3$ (586 °C)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b13a39c2c33455026b957454ee6f64da