Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Richard G. Purser"'
Publikováno v:
MRS Proceedings. 309
Amorphous carbon was evaluated as a diffusion barrier between Cu and Si. Samples were annealed at 500 ºC for 1 hour in vacuum. Barrier properties were characterized for metallurgical failure with RBS and XTEM, and electrical properties were characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db97ae534382c7afa30bda560cf8d4a1
https://doi.org/10.1557/proc-309-481
https://doi.org/10.1557/proc-309-481
Publikováno v:
MRS Proceedings. 281
The transport of germanium through a co-deposited palladium-silicon layer on epitaxially grown GexSi1−x on Si(100) was studied. The Ge concentration in the UHV-CVD grown GexSi1−x film was x=.14 with a thickness of 155 nm. When the co-deposited la
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b90230657ef934dd0639261f8ffbd9c
https://doi.org/10.1557/proc-281-635
https://doi.org/10.1557/proc-281-635