Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Richard D. Harris"'
Publikováno v:
IEEE Transactions on Nuclear Science. 58:2816-2823
Dose rate effects are examined in linear bipolar transistors at high and low dose rates. At high dose rates, approximately 50% of the damage anneals at room temperature, even though these devices exhibit enhanced damage at low dose rate. The unexpect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3356121b52a9f9c268a09bcade0f988c
https://doi.org/10.1109/tns.2011.2168979
https://doi.org/10.1109/tns.2011.2168979
Publikováno v:
Journal of Modern Optics. 58:225-232
Degradation of InGaAs/InP Geiger-mode avalanche photodiodes caused by proton irradiation is reported for the first time. The devices are found to be very sensitive to displacement damage. Substantial changes in the dark count rate, and the after-puls
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b25f0993b1ad45c681238ae836175f92
https://doi.org/10.1080/09500340.2010.525328
https://doi.org/10.1080/09500340.2010.525328
Autor:
Anna Liao, Manuel Gallegos, Toshiro Hatake, William D. Smythe, Kyung-Ah Son, Leif Scheick, Gerald Lung, Richard D. Harris
Publikováno v:
Nanoscience and Nanotechnology Letters. 2:89-95
We develop novel GaN-based high temperature and radiation-hard electronics to realize data acquisition electronics and transmitters suitable for operations in harsh planetary environments. In this paper, we discuss our research on metal-oxide-semicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99b23a74d18f06190802fcd8916fcb18
https://doi.org/10.1166/nnl.2010.1063
https://doi.org/10.1166/nnl.2010.1063
Publikováno v:
IEEE Transactions on Nuclear Science. 56:3310-3317
Operating principles and hardness assurance methods are discussed for various types of optocouplers. Radiation damage in light-emitting diodes is addressed, along with the impact of phototransistors and internal amplifiers on overall performance. Har
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1e3de6b6a5fd7ce8ae331482ff9a5996
https://doi.org/10.1109/tns.2009.2033685
https://doi.org/10.1109/tns.2009.2033685
Publikováno v:
IEEE Transactions on Nuclear Science. 55:3088-3095
The degradation of the LM193 dual voltage comparator has been studied at different TID dose rate profiles, including several different constant dose rates and a variable dose rate that simulates the behavior of a solar flare. A comparison of results
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a39632a9994a35215faae80bf9ab19ab
https://doi.org/10.1109/tns.2008.2006970
https://doi.org/10.1109/tns.2008.2006970
Publikováno v:
2012 IEEE Radiation Effects Data Workshop.
Radiation hardened linear devices were characterized for performance in combined total dose and displacement damage environments for a mission scenario with a high radiation level. Performance at low and high dose rate for both biased and unbiased co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7d4ab049c3a40d095a8e7cb42c4eea0
https://doi.org/10.1109/redw.2012.6353733
https://doi.org/10.1109/redw.2012.6353733
Autor:
Leif Scheick, Yonggyu Gim, T.F. Miyahira, Tushar Thrivikraman, James Hoffman, Richard D. Harris, Masud Jenabi
Publikováno v:
2011 IEEE Radiation Effects Data Workshop.
Commercially available devices fabricated from GaN are beginning to appear from a number of different suppliers. In this initial study of the radiation tolerance of commercial GaN devices, several device types from several suppliers were chosen. Thre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afd07658f994e8d204b24c9123a97e05
https://doi.org/10.1109/redw.2010.6062526
https://doi.org/10.1109/redw.2010.6062526
Autor:
Leif Scheick, Gregory R. Allen, J. N. Bowles-Martinez, S.S. McClure, Richard D. Harris, Bernard G. Rax, Aaron J. Kenna, D. O. Thorbourn
Publikováno v:
2011 IEEE Radiation Effects Data Workshop.
This paper reports on the Total Ionizing Dose results for tests performed at JPL from 2009 to 2011. Various microelectronic devices were evaluated to support upcoming missions and research and development projects.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::857a2c278611ba5b071b6328de29c874
https://doi.org/10.1109/redw.2010.6062502
https://doi.org/10.1109/redw.2010.6062502
Autor:
Toshiro Hatake, Manuel Gallegos, Kyung-Ah Son, William D. Smythe, Leif Scheick, Gerald Lung, Anna Liao, Richard D. Harris
Publikováno v:
SPIE Proceedings.
We develop novel GaN-based high temperature and radiation-hard electronics to realize data acquisition electronics and transmitters suitable for operations in harsh planetary environments. In this paper, we discuss our research on metal-oxide-semicon
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3525fe79696dd2b1ac5f91dcfdeff4bc
https://doi.org/10.1117/12.852711
https://doi.org/10.1117/12.852711
Publikováno v:
2009 European Conference on Radiation and Its Effects on Components and Systems.
Degradation of InGaAs/InP and InGaAsP/InP Geiger-mode avalanche photodiodes caused by proton irradiation is studied for the first time. Substantial changes in the dark I-V characteristics as well as increases in the dark count rate are observed after
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::458d944c110c8da83d8c085ea16c4d3c
https://doi.org/10.1109/radecs.2009.5994684
https://doi.org/10.1109/radecs.2009.5994684